The authors are grateful for the financial support from Ministry of Science and Technology.

1.准备银前体油墨<ol><li>添加1.85克二乙醇胺（DEA）3.15毫升去离子水。 </li><li>溶解0.15克硝酸银在5毫升去离子水。 </li><li>混合与DEA的硝酸银水溶液以1:1的体积比具有10个ml的银前体油墨使用之前。 </li></ol> 2.制造延伸导电薄膜<ol><li> AgNW油墨的制备 <ol><li>稀释2毫升的异丙醇0.5％（重量）AgNWs 18毫升去离子水。 </li><li>将其放置在超声波浴30秒，在25℃。 </li></ol></li><li> AgNW薄膜通过自动喷涂制造 <ol><li>剪标显微镜载片成片的大小等于1×2.5 平方厘米。准备16玻璃碎片这种规模的并用乙醇湿润镜头纸清洁。 </li><li>传输16毫升AgNW油墨（从第1节）进涂料杯airbr的USH用吸管。安装喷枪上的计算机控制的机器人喷涂。 </li><li>将玻璃碎片8在舞台上的4×2的安排和解决这些问题用耐热胶带。在舞台上的所有玻璃基板的总面积是4×5厘米2。 </li><li>设置工作压力和加热阶段的温度在3巴和100°C，分别。 </li><li>打开机器人的控制软件。点击下的"命令"栏中，选择画笔运动指令序列。在必要的输入参数类型来完成自动喷涂方案如图1运行该程序。 注:"线路速度"命令使喷枪行程为200毫米/秒。由"刷区域"命令，喷枪来回移动，在玻璃基板阵列的短边的方向，而移动台沿长边的方向与两杆之间的空间为5mm。 "线开始"和"林Ë结束"命令决定的自动喷涂作业的起点和终点的位置。他们的位置取决于在舞台上的玻璃基片阵列的位置。"等待点"命令将设置20秒的等待时间每个自动喷涂周期的结束。"环路地址"命令使多个喷淋循环和自动喷涂周期数是15次。命令的更详细的指令可以在制造商的方案被发现。 </li><li>改变自动喷涂周期数成30倍。重复步骤2.2.3 - 2.2.5制作AgNW薄膜30喷洒周期。 </li><li>喷涂后，烘烤银纳米线薄膜在热板上在120℃下进行10分钟。 </li></ol></li><li> 化学焊接工艺 <ol><li>投400微升银前体油墨在玻璃基板上的每个喷涂银纳米丝薄膜。 </li><li>烤的热板上的薄膜在100＃176;下进行40分钟。 </li><li>仔细冲洗反应性涂料，用去离子水以除去不反应的化学残留物和空气干燥涂布的膜。 </li></ol></li><li> 铸剥离过程 <ol><li>投200μl的市售水基PU乳液在玻璃基板上的每个银纳米复合薄膜。 </li><li>空气干燥膜10小时，以确保完全固化。 </li><li>剥离样本从玻璃基板作为独立式复合薄膜。 </li></ol></li></ol> 3.表征<ol><li> 拉伸试验 <ol><li>打开线性机动阶段，等待10分钟，让机器预热。 </li><li>打开阶段控制软件。设定的电动机8000的移动步骤的数量。在舞台控制软件点击"X +"，直到它触及固定的阶段，移动移动舞台，点击"设置0"设置T的位置他的移动舞台，在舞台控制软件为零。 注意:所述的移动台移动0.00125毫米在电机中的一个步骤。例如，移动台移动1厘米，如果电机移动8000的步骤。的加号"X +"指的是在接近固定阶段，而"X-"的负号装置从固定台移动离开的方向移动台移动。 </li><li>点击"X-"移动的移动舞台，离开了移动和固定阶段在1厘米的空间。固定样品的两端与接线座到阶段。由此，样品的拉伸面积为1×1厘米2。拉伸机的设置示于图2。 </li><li>使用鳄鱼夹，这是布线电缆连接到阶段持有者（图2）的另一端，连接到数字万用表的电阻测量。 </li><li>置的移动步骤的电动机的数量为800点击"X-"为MOVE中的移动台1毫米（10％应变）离开固定阶段拉伸样品，并记录电阻。重复此步骤，直到阻力显著增加（〜150％应变）。 </li></ol></li><li> 稳定性试验 <ol><li>准备测试按照步骤3.1.2 - 3.1.4。 </li><li>打开数字万用表软件。数字万用表连接到计算机。长按数字万用表，直到电脑图标"RELΔ"按钮将出现在数字万用表显示屏的左上角。单击数字万用表软件"USB连接"，软件开始记录测量的电阻。 </li><li>将命令输入到在阶段控制软件的程序面板的输入字段，如图3中的命令。"U-4000"，是指从固定台移动的移动阶段4000步程，而命令":U4000"装置移动移动舞台4000步回在固定阶段（4000为50％的应变，8000的100％株）。拉伸循环的次数是15次。所述移动台的默认速度为1毫米/秒。 </li><li>点击"运行123"在舞台控制软件的程序面板，执行自动程序。在往复运动的移动台移动到伸展与三角波形的伸长循环样本。 </li><li>点击保存图标万用表软件和出口的阻力响应曲线的数据为.xls文件。 </li></ol></li><li> LED照明测试 <ol><li>准备测试按照步骤3.1.2 - 3.1.3。连接有线持有者串联一个LED和一个电源。 </li><li>接通电源。增加电压至9伏点亮的LED。 </li><li>点击"X-"从固定台移动手机第一阶段毫米（10％株）客场拉伸试样，并拍摄照片，记录了LED的亮度。重复此步骤，直到光LED变暗。要小心，自动曝光相机，应关闭，而拍照。 </li></ol></li></ol>

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The authors have nothing to disclose.

化学焊接工艺可以帮助加强银纳米线之间的接触。 如图4b所示，导线/线结被施加反应性银油墨过度涂覆AgNW薄膜喷雾后覆盖有银。的银回收强烈依赖于来自DEA降解所产生的甲醛，并因此在焊接工艺或还原银可以随着温度的增加而加速。22由于AgNWs的金属表面提供有效的电子交换部位，银纳米粒子被优先沿AgNW表面减小，并包裹在钢丝线结，形成混合的接触。这种化学物质的焊接工艺，但是，需要一个漂洗过程事后去除过多的活性解决方案。人们需要冲洗焊料AgNW薄膜缓慢且小心地由于干燥之前AgNWs与玻璃之间的低粘附力。漂洗和干燥后，AgNW薄膜可以是由铸和剥离方法容易转移到PU。与玻璃的顶部模具或间隔件，还可以容易地调整聚氨酯层在复合伸缩性导体的厚度。 复合拉伸导线表明，在高应变条件下很大的电导率无论喷涂AgNWs的金额。作为的牢固地接合的纳米线的接触的结果，该AgNW网络保持拉伸条件下完好，并提供大的电子传递路径。 如图5中的未焊接伸缩性导体的薄层电阻迅速增加所施加的应变增加，因为导体的伸长导致未焊接线丝结的错位和减少AgNW网络的导电通路。另一方面，焊接的伸缩性导体的薄层电阻保持为低达〜100Ω/□，在120％的大应变，这表明减少银nanoparticles不退火AgNWs之间的联系，增强AgNWs的连通性，以防止AgNW的错位网。一旦有效渗透AgNW网络形成，该复合伸缩性导体可以不管淀积AgNW量显示出高导电性。中所证明的电阻应变曲线在图5中，可拉伸的导体与半AgNW量（15与30喷射周期）示出了几乎相同的导电率下拉伸处理，表明AgNWs的量具有化学上后导电性的影响可以忽略焊接。其结果是，只要能用作初始喷涂AgNW薄膜是化学焊接过程之前导电更低AgNW量。 可拉伸导线表现出相当良好的机械稳定性，即使在大动态的应变快速拉伸率。 如图6所示，焊接AgNW网格网络保持完好当一个施加三角形伸长个循环，50％变形的大应变。因此，伸缩性导体的电阻保持几乎没有变化具有非常小的变化〜5Ω/□的，这与在50％的静态应变的电阻变化（〜4Ω/□）是一致的。然而，当一个偶大应变振幅（100％）时，大的电阻变化被观察到，这表明在脉动过程中AgNW网络的完整性的结构变化。动态电阻变化远大于在静态伸展。与图 5中的数据进行比较，静态电阻约为25Ω/□，在100％的应变，而动态电阻是90Ω/□，在第一个峰值和上升到400Ω/□在动态脉动。在100％的大应变，样品不能维持动应力和焊接的Ag纳米线网络的某些结构可能被损坏，导致不一致betweeÑ​​下的静态和动态的菌株的薄层电阻。此外，虽然拉伸方向反转，其中峰阻力发生时，瞬时大的速度加速由移动台施加，并可能导致进一步的结构损害，在增加的动态峰值电阻反映。此外，在静态和动态电阻的差异的部分可能来自AgNWs和下动态菌株在PU基板之间可能临时位错。这些位错可以被恢复，其证据是，电阻返回到脉动停止后的原来的值的事实。因此，为了避免电阻变化，人们必须仔细评估AgNW之间的粘附和机械兼容性网眼和弹性基片。 伸缩性导体可以直接作为在许多电子应用的理想的弹性互连件;图7示出了进行动态观察时一个stretChâble的导体与串联的LED相连。当用恒定电压提供时，LED的光的亮度几乎保持不变，即使有一个应变达110％。这种合成的复合伸缩性导体可以以任何电气装置如弹性导电轨容易地施加。然而，进一步在实际的电气设备，一个需要的小型化的电极图案为完整的电路实现。因此，在与印刷技术制造拉伸电路进行更多的研究仍在进行。 总之，这项工作提出了一种简单的方法来制造高拉伸导线在低温下。上的PU化学焊接AgNW网络可以容纳大量的弹性应变，并表现出在拉伸过程中优异的导电性和机械稳定性。此外，化学焊接导体显示AgNWs的量几乎相同的电和机械性能无关，我ndicating可能减少材料的浪费。我们相信，这个伸缩性导体材料可以直接作为有效的互连在可穿戴和伸缩性光电子器件，如LED和太阳能电池，对于下一代电子。

可变形的电子设备具有大的伸缩性已被确定为关键部件的实现可穿戴和便携式电子产品中的下一代。1这些伸缩性电子器件不仅表现出极大的灵活性，因为对塑料片2，3的那些电子设备，但也表现出优异的严重的拉伸或扭转条件下的性能。4要实现的可拉伸电子，材料，下大变形很大的电气性能是必要的。在材料科学的最新进展表明，合成等功能材料的可能性，并用他们来设计伸缩光电器件5-9以极大的宽容，以复杂的形状变形。在所有的电子功能材料，可拉伸的导体是需要供给电力的那些光电器件，从而对设备的性能至关重要。因为常规的导电材料，如金属或铟锡氧化物，缺乏下大变形的机械强度的，由这些材料制成的互连都无法下拉伸处理，以表现出良好的导电性。因此，覆盖有一层薄薄的柔性导电材料，例如碳纳米管，石墨烯1，10或AgNWs弹性基材，11-14被设计为具有优良的拉伸性的导体。因为高体积电导率的，AgNW薄膜已被证明是最有前途的材料为复合伸缩性导体。AgNW薄膜13的渗透网络可以有效地容纳大的弹性变形在拉伸过程中以极大的电导，并且被认为是一个有前途的拉伸电极候选人。为了实现AgNW薄膜作为伸缩性导体，它必须有AgNWs之间的有效的电接触。经过液相沉积的在基板表面ð干燥，AgNWs定期堆叠在一起，以形成渗透啮合松接触点，其产生在大的电阻。因此，人们需要退火通过高温或高压退火方法15-20纳米线之间的接触，以降低接触电阻。 在对比文献中的这些退火工艺，在这里，我们将展示一个简单的化学方法进行退火定期实验室条件AgNW网络连接21的制造过程示于图4A中 。阿反应性墨，用于烧结喷涂AgNW薄膜在玻璃板上。反应后，纳米线之间的接触覆盖有银并且因此AgNW网络被化学焊接在一起。甲铸和剥离方法被用来将焊接AgNW网络传送到一个​​可拉伸的PU基材以形成复合导体，它可以表现出无明显变化我n条电子导电性，即使在120％的大型拉伸应变。

<table border="0" cellpadding="0" cellspacing="0" width="833">
	<tbody>
		<tr height="21">
			<td height="21" style="height:21px;width:173px;">Silver nanowire</td>
			<td style="width:195px;">Sigma-Aldrich</td>
			<td style="width:117px;">778095-25ML</td>
			<td style="width:349px;">AgNW, 120 nm in diameter and 20-50 mm in length, 0.5 wt% in IPA</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Silver nitrate crystal</td>
			<td>Macron Fine Chemicals</td>
			<td>MK216903</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Diethanolamine</td>
			<td>Sigma-Aldrich</td>
			<td>D8885-500G</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Polyurethane emulsion</td>
			<td>First Chemical</td>
			<td>20130326036</td>
			<td>35 wt% water-based anionic polyester-polyurethane emulsion</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Airbrush</td>
			<td>Taiwan Airbrush &#38; Equipment</td>
			<td>AFC-sensor&#160;</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Desktop robot</td>
			<td>Dispenser Tech</td>
			<td>DT-200&#160;</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Digital dispenser controller</td>
			<td>Dispenser Tech</td>
			<td>9000E&#160;</td>
			<td></td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:173px;">Auto-spraying program</td>
			<td style="width:195px;">Dispenser Tech</td>
			<td style="width:117px;">Smart robot edit version 3.0.0.5</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Air compressor&#160;</td>
			<td>PUMA Industrial</td>
			<td>NCS-10&#160;</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Linear motorized stage</td>
			<td>TANLIAN E-O</td>
			<td>Customized</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:173px;">Stage control software</td>
			<td style="width:195px;">TANLIAN E-O</td>
			<td style="width:117px;">Customized</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Digital multimeter</td>
			<td>HILA INTERNATIONAL</td>
			<td>DM-2690TU</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:173px;">Digital multimeter software</td>
			<td style="width:195px;">HILA INTERNATIONAL</td>
			<td style="width:117px;">NA</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Power supply</td>
			<td>CHERN TAIH</td>
			<td>CT-605</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">LED</td>
			<td>PChome</td>
			<td>M08330766</td>
			<td>http://www.pcstore.com.tw/sun-flower/M08330766.htm</td>
		</tr>
	</tbody>
</table>

a fabrication method for highly stretchable conductors with silver nanowires

伸缩性电子装置被认为是一个关键的技术用于电子应用中的下一代。之一，在伸缩性电子器件的制造中的挑战之一是与大的机械稳定性的制剂的伸缩性导体。在这项研究中，我们开发了一个简单的制造方法，化学焊接银纳米线（AgNW）网络之间的接触点。 AgNW纳米网首先沉积在通过喷涂法在玻璃幻灯片。银纳米粒子（AGNPS）的前体组成的无油墨涂了涂AgNW薄膜喷涂。加热40分钟后，分别AGNPS优先于纳米线结到焊接AgNW纳米筛产生，并且加强了导电网络。然后将化学修饰AgNW薄膜转移至聚氨酯（PU）通过流延法的底物。该焊接AgNW薄膜的聚氨酯表现在拉伸或罗林电导率无明显变化克过程与伸长株高达120％。

化学焊接过程之后的AgNW薄膜的形态示于图4B。回收AGNPS优先成长AgNWs的表面上，敷在导线/线结。 图5示出了变化的薄层电阻与施加的伸长张力为未焊接和含有不同量AgNWs的焊接的薄膜。化学焊接工艺后，AgNW薄膜导体可以高应变条件下保持高导电性，不管AgNWs的喷洒量。这两种焊接AgNW薄膜显示低于100Ω/□的薄膜电阻，当低于120％的菌株被应用。该复合伸缩性导电薄膜表现出极大的机械稳定性在动态变形过程。 图6示出了在0快速应变速率下一个三角波形的伸长循环伸缩性导体的电阻变化<html> 0.05 秒 -1。没有明显的电阻变化观察到的50％的应变幅度。当应变振幅增加到100％应变，峰值阻力增大了与脉动周期数，并且膜返回到脉动停止后的原始值的电阻，图7展示了化学焊接薄膜的电子应用。 <img alt="图1" src="/files/ftp_upload/53623/53623fig1.jpg" /> 图1中的机器人控制软件的屏幕截图。 <a href="https://www-jove-com.remotexs.ntu.edu.sg/files/ftp_upload/53623/53623fig1large.jpg" target="_blank">请点击此处查看该图的放大版本。</a> <img alt="图2" src="/files/ftp_upload/53623/53623fig2.jpg" /> 图2. 绷网机配置。<html> ve.com/files/ftp_upload/53623/53623fig2large.jpg"目标="_空白"&gt;点击此处查看该图的放大版本。 <img alt="图3" src="/files/ftp_upload/53623/53623fig3.jpg" /> 图3. 舞台控制软件的屏幕截图。 <a href="https://www-jove-com.remotexs.ntu.edu.sg/files/ftp_upload/53623/53623fig3large.jpg" target="_blank">请点击此处查看该图的放大版本。</a> <img alt="图4" src="/files/ftp_upload/53623/53623fig4.jpg" /> 制造过程的高伸缩的和导电的金属导体中的图4示意图。（A）中的样品如图中所示制备。化学焊接的AgNW薄膜被转移到聚氨酯基体前（B）的SEM图像。<html> 53623fig4large.jpg"目标="_空白"&gt;点击此处查看该图的放大版本。 <img alt="图5" src="/files/ftp_upload/53623/53623fig5.jpg" /> 拉伸条件下虚焊和焊接AgNW薄膜与各种喷AgNW电电阻图5.拉伸试验，比较金额。 <a href="https://www-jove-com.remotexs.ntu.edu.sg/files/ftp_upload/53623/53623fig5large.jpg" target="_blank">请点击此处查看该图的放大版本。</a> <img alt="图6" src="/files/ftp_upload/53623/53623fig6.jpg" /> 图6.稳定性试验。根据三角波的伸长循环拉伸薄膜的电阻响应曲线。脉动应变速率为10 秒 -1。测试样品是从AgNW薄膜制成具有15喷洒周期。S / ftp_upload / 53623 / 53623fig6large.jpg"目标="_空白"&gt;点击此处查看该图的放大版本。 <img alt="图7" src="/files/ftp_upload/53623/53623fig7.jpg" /> 图7.视频与各种应变条件下的伸缩性导体连接的LED的光。所引起的拉伸导体的LED亮度变化示于图中。测试样品从AgNW薄膜制成15喷洒周期<a href="https://www-jove-com.remotexs.ntu.edu.sg/files/ftp_upload/53623/Figure7.mp4">。（点击下载）</a>

Watch this Scientific Journal Video about A Fabrication Method for Highly Stretchable Conductors with Silver Nanowires at JoVE.com

A Fabrication Method for Highly Stretchable Conductors with Silver Nanowires

A simple synthesis method is used to chemically solder silver nanowire thin film to fabricate highly stretchable and conductive metal conductors.

对于高伸缩的导线与银纳米线制作方法

Stretchable electronics are identified as a key technology for electronic applications in the next generation. One of the challenges in fabrication of ...

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9.8K 次观看.  National Taiwan University. A simple synthesis method is used to chemically solder silver nanowire thin film to fabricate highly stretchable and conductive metal conductors.

视频: A Fabrication Method for Highly Stretchable Conductors with Silver Nanowires

A Method to Fabricate Disconnected Silver Nanostructures in 3D

The standard nanofabrication toolkit includes techniques primarily aimed at creating 2D patterns in dielectric media. Creating metal patterns on a submicron scale requires a combination of nanofabrication tools and several material processing steps. For example, steps to create planar metal structures using ultraviolet photolithography and electron-beam lithography can include sample exposure, sample development, metal deposition, and metal liftoff. To create 3D metal structures, the sequence is repeated multiple times. The complexity and difficulty of stacking and aligning multiple layers limits practical implementations of 3D metal structuring using standard nanofabrication tools. Femtosecond-laser direct-writing has emerged as a pre-eminent technique for 3D nanofabrication.1,2 Femtosecond lasers are frequently used to create 3D patterns in polymers and glasses.3-7 However, 3D metal direct-writing remains a challenge. Here, we describe a method to fabricate silver nanostructures embedded inside a polymer matrix using a femtosecond laser centered at 800 nm. The method enables the fabrication of patterns not feasible using other techniques, such as 3D arrays of disconnected silver voxels.8 Disconnected 3D metal patterns are useful for metamaterials where unit cells are not in contact with each other,9 such as coupled metal dot10,11or coupled metal rod12,13 resonators. Potential applications include negative index metamaterials, invisibility cloaks, and perfect lenses.
In femtosecond-laser direct-writing, the laser wavelength is chosen such that photons are not linearly absorbed in the target medium. When the laser pulse duration is compressed to the femtosecond time scale and the radiation is tightly focused inside the target, the extremely high intensity induces nonlinear absorption. Multiple photons are absorbed simultaneously to cause electronic transitions that lead to material modification within the focused region. Using this approach, one can form structures in the bulk of a material rather than on its surface.
Most work on 3D direct metal writing has focused on creating self-supported metal structures.14-16 The method described here yields sub-micrometer silver structures that do not need to be self-supported because they are embedded inside a matrix. A doped polymer matrix is prepared using a mixture of silver nitrate (AgNO3), polyvinylpyrrolidone (PVP) and water (H2O). Samples are then patterned by irradiation with an 11-MHz femtosecond laser producing 50-fs pulses. During irradiation, photoreduction of silver ions is induced through nonlinear absorption, creating an aggregate of silver nanoparticles in the focal region. Using this approach we create silver patterns embedded in a doped PVP matrix. Adding 3D translation of the sample extends the patterning to three dimensions.

Femtosecond-laser direct-writing is frequently used to create three-dimensional (3D) patterns in polymers and glasses. However, patterning metals in 3D remains a challenge. We describe a method for fabricating silver nanostructures embedded inside a polymer matrix using a femtosecond laser centered at 800 nm.

一个断开连接的银纳米结构的方法来制作的3D

The standard nanofabrication toolkit includes  techniques primarily aimed at creating 2D patterns in dielectric media. Creating  metal patterns on a ...

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工程学

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra shallow and sharp doping profiles at the nanometer scale. In MLCD process the dopant source is a monolayer containing dopant atoms.
In this article a detailed procedure for surface doping of silicon substrate as well as silicon nanowires is demonstrated. Phosphorus dopant source was formed using tetraethyl methylenediphosphonate monolayer on a silicon substrate. This monolayer containing substrate was brought to contact with a pristine intrinsic silicon target substrate and annealed while in contact. Sheet resistance of the target substrate was measured using 4 point probe. Intrinsic silicon nanowires were synthesized by chemical vapor deposition (CVD) process using a vapor-liquid-solid (VLS) mechanism; gold nanoparticles were used as catalyst for nanowire growth. The nanowires were suspended in ethanol by mild sonication. This suspension was used to dropcast the nanowires on silicon substrate with a silicon nitride dielectric top layer. These nanowires were doped with phosphorus in similar manner as used for the intrinsic silicon wafer. Standard photolithography process was used to fabricate metal electrodes for the formation of nanowire based field effect transistor (NW-FET). The electrical properties of a representative nanowire device were measured by a semiconductor device analyzer and a probe station.

A detailed procedure for surface doping of Silicon interfaces is provided. The ultra-shallow surface doping is demonstrated by using phosphorus containing monolayers and rapid annealing process. The method can be used for doping of macroscopic area surfaces as well as nanostructures.

Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra ...

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

Plasmonics is an emerging technology capable of simultaneously transporting a plasmonic signal and an electronic signal on the same information support1,2,3. In this context, metal nanowires are especially desirable for realizing dense routing networks4. A prerequisite to operate such shared nanowire-based platform relies on our ability to electrically contact individual metal nanowires and efficiently excite surface plasmon polaritons5 in this information support. In this article, we describe a protocol to bring electrical terminals to chemically-synthesized silver nanowires6 randomly distributed on a glass substrate7. The positions of the nanowire ends with respect to predefined landmarks are precisely located using standard optical transmission microscopy before encapsulation in an electron-sensitive resist. Trenches representing the electrode layout are subsequently designed by electron-beam lithography. Metal electrodes are then fabricated by thermally evaporating a Cr/Au layer followed by a chemical lift-off. The contacted silver nanowires are finally transferred to a leakage radiation microscope for surface plasmon excitation and characterization8,9. Surface plasmons are launched in the nanowires by focusing a near infrared laser beam on a diffraction-limited spot overlapping one nanowire extremity5,9. For sufficiently large nanowires, the surface plasmon mode leaks into the glass substrate9,10. This leakage radiation is readily detected, imaged, and analyzed in the different conjugate planes in leakage radiation microscopy9,11. The electrical terminals do not affect the plasmon propagation. However, a current-induced morphological deterioration of the nanowire drastically degrades the flow of surface plasmons. The combination of surface plasmon leakage radiation microscopy with a simultaneous analysis of the nanowire electrical transport characteristics reveals the intrinsic limitations of such plasmonic circuitry.

Silver nanowires can simultaneously transport electrons and optical information in the form of surface plasmons. A procedure is described here to realize such a shared circuitry and the limitations at propagating both information carriers are evaluated.

Plasmonics is an emerging technology capable of simultaneously transporting a plasmonic signal and an electronic signal on the same information ...

Preparation and Use of Photocatalytically Active Segmented Ag|ZnO and Coaxial TiO2-Ag Nanowires Made by Templated Electrodeposition

Photocatalytically active nanostructures require a large specific surface area with the presence of many catalytically active sites for the oxidation and reduction half reactions, and fast electron (hole) diffusion and charge separation. Nanowires present suitable architectures to meet these requirements. Axially segmented Ag|ZnO and radially segmented (coaxial) TiO2-Ag nanowires with a diameter of 200 nm and a length of 6-20 &#181;m were made by templated electrodeposition within the pores of polycarbonate track-etched (PCTE) or anodized aluminum oxide (AAO) membranes, respectively. In the photocatalytic experiments, the ZnO and TiO2 phases acted as photoanodes, and Ag as cathode. No external circuit is needed to connect both electrodes, which is a key advantage over conventional photo-electrochemical cells. For making segmented Ag|ZnO nanowires, the Ag salt electrolyte was replaced after formation of the Ag segment to form a ZnO segment attached to the Ag segment. For making coaxial TiO2-Ag nanowires, a TiO2 gel was first formed by the electrochemically induced sol-gel method. Drying and thermal annealing of the as-formed TiO2 gel resulted in the formation of crystalline TiO2 nanotubes. A subsequent Ag electrodeposition step inside the TiO2 nanotubes resulted in formation of coaxial TiO2-Ag nanowires. Due to the combination of an n-type semiconductor (ZnO or TiO2) and a metal (Ag) within the same nanowire, a Schottky barrier was created at the interface between the phases. To demonstrate the photocatalytic activity of these nanowires, the Ag|ZnO nanowires were used in a photocatalytic experiment in which H2 gas was detected upon UV illumination of the nanowires dispersed in a methanol/water mixture. After 17 min&#160;of illumination, approximately 0.2 vol% H2 gas was detected from a suspension of ~0.1 g of Ag|ZnO nanowires in a 50 ml 80 vol% aqueous methanol solution.

Preparation and Use of Photocatalytically Active Segmented Ag|ZnO and Coaxial TiO2-Ag Nanowires Made by Templated Electrodeposition

Procedures are outlined to prepare segmented and coaxial nanowires via templated electrodeposition in nanopores. As examples, segmented nanowires consisting of Ag and ZnO segments, and coaxial nanowires consisting of a TiO2 shell and a Ag core were made. The nanowires were used in photocatalytic hydrogen formation experiments.

制备和使用光催化活性分段银|氧化锌和二氧化钛同轴<sub&gt; 2</sub&gt;银纳米线制成由模板电

Photocatalytically active nanostructures require a large specific surface area with the presence of many catalytically active sites for the oxidation and ...

Atomically Traceable Nanostructure Fabrication

Reducing the scale of etched nanostructures below the 10 nm range eventually will require an atomic scale understanding of the entire fabrication process being used in order to maintain exquisite control over both feature size and feature density. Here, we demonstrate a method for tracking atomically resolved and controlled structures from initial template definition through final nanostructure metrology, opening up a pathway for top-down atomic control over nanofabrication. Hydrogen depassivation lithography is the first step of the nanoscale fabrication process followed by selective atomic layer deposition of up to 2.8 nm of titania to make a nanoscale etch mask. Contrast with the background is shown, indicating different mechanisms for growth on the desired patterns and on the H passivated background. The patterns are then transferred into the bulk using reactive ion etching to form 20 nm tall nanostructures with linewidths down to ~6 nm. To illustrate the limitations of this process, arrays of holes and lines are fabricated. The various nanofabrication process steps are performed at disparate locations, so process integration is discussed. Related issues are discussed including using fiducial marks for finding nanostructures on a macroscopic sample and protecting the chemically reactive patterned Si(100)-H surface against degradation due to atmospheric exposure.

We report a protocol for combining the atomic metrology of the Scanning Tunneling Microscope for surface patterning with selective Atomic Layer Deposition and Reactive Ion Etching. Using a robust process involving numerous atmospheric exposures and transport, 3D nanostructures with atomic metrology are fabricated.

原子纳米结构可追溯制造

Reducing the scale of etched nanostructures below the 10 nm range eventually will require an atomic scale understanding of the entire fabrication process ...

Fabrication Process of Silicone-based Dielectric Elastomer Actuators

This contribution demonstrates the fabrication process of dielectric elastomer transducers (DETs). DETs are stretchable capacitors consisting of an elastomeric dielectric membrane sandwiched between two compliant electrodes. The large actuation strains of these transducers when used as actuators (over 300% area strain) and their soft and compliant nature has been exploited for a wide range of applications, including electrically tunable optics, haptic feedback devices, wave-energy harvesting, deformable cell-culture devices, compliant grippers, and propulsion of a bio-inspired fish-like airship. In most cases, DETs are made with a commercial proprietary acrylic elastomer and with hand-applied electrodes of carbon powder or carbon grease. This combination leads to non-reproducible and slow actuators exhibiting viscoelastic creep and a short lifetime. We present here a complete process flow for the reproducible fabrication of DETs based on thin elastomeric silicone films, including casting of thin silicone membranes, membrane release and prestretching, patterning of robust compliant electrodes, assembly and testing. The membranes are cast on flexible polyethylene terephthalate (PET) substrates coated with a water-soluble sacrificial layer for ease of release. The electrodes consist of carbon black particles dispersed into a silicone matrix and patterned using a stamping technique, which leads to precisely-defined compliant electrodes that present a high adhesion to the dielectric membrane on which they are applied.

This manuscript shows the fabrication process for the manufacture of dielectric elastomer soft actuators based on silicone membranes. The three key stages of production are presented in detail: blade casting of thin silicone membranes; pad printing of compliant electrodes; and the assembly of all the components.

有机硅为基础的介电弹性体致动器的制作工艺

This contribution demonstrates the fabrication process of dielectric elastomer transducers (DETs). DETs are stretchable capacitors consisting of an ...

Solvent Bonding for Fabrication of PMMA and COP Microfluidic Devices

Thermoplastic microfluidic devices offer many advantages over those made from silicone elastomers, but bonding procedures must be developed for each thermoplastic of interest. Solvent bonding is a simple and versatile method that can be used to fabricate devices from a variety of plastics. An appropriate solvent is added between two device layers to be bonded, and heat and pressure are applied to the device to facilitate the bonding. By using an appropriate combination of solvent, plastic, heat, and pressure, the device can be sealed with a high quality bond, characterized as having high bond coverage, bond strength, optical clarity, durability over time, and low deformation or damage to microfeature geometry. We describe the procedure for bonding devices made from two popular thermoplastics, poly(methyl-methacrylate) (PMMA), and cyclo-olefin polymer (COP), as well as a variety of methods to characterize the quality of the resulting bonds, and strategies to troubleshoot low quality bonds. These methods can be used to develop new solvent bonding protocols for other plastic-solvent systems.

Solvent bonding is a simple and versatile method for fabricating thermoplastic microfluidic devices with high quality bonds. We describe a protocol to achieve strong, optically clear bonds in PMMA and COP microfluidic devices that preserve microfeature details, by a judicious combination of pressure, temperature, an appropriate solvent, and device geometry.

溶剂粘接的PMMA的制备和COP微流体装置

Thermoplastic microfluidic devices offer many advantages over those made from silicone elastomers, but bonding procedures must be developed for each ...

Challenges in Rheological Characterization of Highly Concentrated Suspensions &#8212; A Case Study for Screen-printing Silver Pastes

A comprehensive rheological characterization of highly concentrated suspensions or pastes is mandatory for a targeted product development meeting the manifold requirements during processing and application of such complex fluids. In this investigation, measuring protocols for a conclusive assessment of different process relevant rheological parameters have been evaluated. This includes the determination of yield stress, viscosity, wall slip velocity, structural recovery after large deformation and elongation at break as well as tensile force during filament stretching.
The importance of concomitant video recordings during parallel-plate rotational rheometry for a significant determination of rheological quantities is demonstrated. The deformation profile and flow field at the sample edge can be determined using appropriate markers. Thus, measurement parameter settings and plate roughness values can be identified for which yield stress and viscosity measurements are possible. Slip velocity can be measured directly and measuring conditions at which plug flow, shear banding or sample spillover occur can be identified clearly. 
Video recordings further confirm that the change in shear moduli observed during three stage oscillatory shear tests with small deformation amplitude in stage I and III but large oscillation amplitude in stage II can be directly attributed to structural break down and recovery. For the pastes investigated here, the degree of irreversible, shear-induced structural change increases with increasing deformation amplitude in stage II until a saturation is reached at deformations corresponding to the crossover of G' and G'', but the irreversible damage is independent of the duration of large amplitude shear. 
A capillary breakup elongational rheometer and a tensile tester have been used to characterize deformation and breakup behavior of highly filled pastes in uniaxial elongation. Significant differences were observed in all experiments described above for two commercial screen-printing silver pastes used for front side metallization of Si-solar cells.

A protocol for a robust and application relevant rheological characterization of highly concentrated suspensions is presented. Silver pastes used for screen-printing application in solar cell production are employed as model systems.

挑战流变特性高度集中悬架 - 为例进行丝网印刷银浆

A comprehensive rheological characterization of highly concentrated suspensions or pastes is mandatory for a targeted product development meeting the ...

Fabrication of Ultra-thin Color Films with Highly Absorbing Media Using Oblique Angle Deposition

Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.&#160; We present an advanced method for fabricating ultra-thin color films with improved characteristics. The proposed process addresses several fabrication issues, including large area processing. Specifically, the protocol describes a process for fabricating ultra-thin color films using an electron beam evaporator for oblique angle deposition of germanium (Ge) and gold (Au) on silicon (Si) substrates.&#160; Film porosity produced by the oblique angle deposition induces color changes in the ultra-thin film. The degree of color change depends on factors such as deposition angle and film thickness. Fabricated samples of the ultra-thin color films showed improved color tunability and color purity. In addition, the measured reflectance of the fabricated samples was converted into chromatic values and analyzed in terms of color. Our ultra-thin film fabricating method is expected to be used for various ultra-thin film applications such as flexible color electrodes, thin film solar cells, and optical filters. Also, the process developed here for analyzing the color of the fabricated samples is broadly useful for studying various color structures.

We present a detailed method for fabricating ultra-thin color films with improved characteristics for optical coatings. The oblique angle deposition technique using an electron beam evaporator allows improved color tunability and purity. Fabricated films of Ge and Au on Si substrates were analyzed by reflectance measurements and color information conversion.

用斜角沉积法制备高吸收介质的超薄彩色薄膜

Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.&#160; We present ...

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Flow-assisted dielectrophoresis (DEP) is an efficient self-assembly method for the controllable and reproducible positioning, alignment, and selection of nanowires. DEP is used for nanowire analysis, characterization, and for solution-based fabrication of semiconducting devices. The method works by applying an alternating electric field between metallic electrodes. The nanowire formulation is then dropped onto the electrodes which are on an inclined surface to create a flow of the formulation using gravity. The nanowires then align along the gradient of the electric field and in the direction of the liquid flow. The frequency of the field can be adjusted to select nanowires with superior conductivity and lower trap density. 
In this work, flow-assisted DEP is used to create nanowire field effect transistors. Flow-assisted DEP has several advantages: it allows selection of nanowire electrical properties; control of nanowire length; placement of nanowires in specific areas; control of orientation of nanowires; and control of nanowire density in the device. 
The technique can be expanded to many other applications such as gas sensors and microwave switches. The technique is efficient, quick, reproducible, and it uses a minimal amount of dilute solution making it ideal for the testing of novel nanomaterials. Wafer scale assembly of nanowire devices can also be achieved using this technique, allowing large numbers of samples for testing and large-area electronic applications.

In this paper, flow assisted dielectrophoresis is demonstrated for the self-assembly of nanowire devices. The fabrication of a silicon nanowire field effect transistor is shown as an example.

流动辅助介: 一种低成本的制备高性能溶液可纳米线器件的方法

Flow-assisted dielectrophoresis (DEP) is an efficient self-assembly method for the controllable and reproducible positioning, alignment, and selection of ...