Name: probing c84-embedded si substrate using scanning probe microscopy and molecular dynamics
Uploaded: 2016-09-28T12:30:00.000+00:00
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Description: Watch this Scientific Journal Video about Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics at JoVE.com

The authors would like to thank the Ministry of Science and Technology of Taiwan, for their financial support of this research under Contract Nos. MOST-102-2923-E-492- 001-MY3 (W. J. Lee) and NSC-102- 2112-M-005-003-MY3 (M. S. Ho). Support from the High-performance Computing of Taiwan in providing huge computing resources to facilitate this research is also gratefully acknowledged.

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Yazarlar ifşa hiçbir şey yok.

<html> Bu çalışmada, (Şekil 1), yeni bir tavlama işlemi ile Si alt-tabaka üzerinde Cı 84 bir kendi kendine bir araya tek tabaka imalat göstermektedir. Bu işlem, nanopartikül gömülü iletken yüzeyler başka türlü hazırlamak için de kullanılabilir. C 84 Si substrat UHV-STM (Şekil 2), saha emisyon spektrometresi, foto-ışıldama spektroskopisi, MFM ve SQUID (Şekil 3) kullanılarak atomik ölçekte karakterize edildi Gömülü. Cı 84 nanomekanik özellikleri (örneğin, stres) tekabül eden yapışma gücü Si alt-tabakalar AFM (Şekil 4) kullanılarak ölçülebilir Gömülü. Sonuçlarımız, önerilen C 84 sertlik Si alt-tabaka araçları ve MEMS cihazlarının bir film kesme için bir aşındırıcı malzeme olarak bu geçerli hale SiC ve Si yüzeylerin ile karşılaştırılabilir Gömülü olduğunu göstermektedir. jove_content &quot;&gt; Simülasyon bölümünde, von Mises soyu (ε VM) analizi deneyinde gözlemlenen edilmesi çok zordur atomik yapı, lokal deformasyon tespit edebilir. Ancak, faz dönüşümü karakterize etmek mümkün değildir. burada, biz böyle koordinasyon sayısı ve faz dönüşümü incelemek için HA endeksi 23 olarak bazı yararlı endeksleri göstermektedir. girinti modeli ortamda, biz planı doğrultusunda substratın boyutu en az üç kat daha büyük olması gerektiğini işaret var boyut efekti ve dinamiklerini ve atomların kuvvet akışını etkileyecek sınır koşulu sınırlama, ortadan kaldırılması için prob çapından daha. Buna ek olarak, MD simülasyon süre, için girinti sürecini incelemek nedeniyle, sonda deneyde kıyasla çok hızlı bir hız ile örnek sarf etmelidir. Biz böyle bir yükleme hızı en uzun süre çıkıp çok yüksek olduğuna dikkatSonuçlar doğada 25 yaklaşık olarak yarı-statik kabul edilebilir, çünkü omic difüzyon ve göç davranışı, ancak gözlemlemek ve mekanik yüklenme 24 altında plastik deformasyon davranışı ve malzeme özelliklerinin tanımlanması için hala uygundur. Alternatif bir teori adlı Paralel Kopya dinamiği (PRD) 26, esasen simülasyon zamanını hızlandırmak için geliştirilmiştir, ancak ağır işlem kaynakları gerektirir. MD simülasyon Çalışmada elde edilen veriler AFM girinti deney (Şekil 8) ile uyum içindedir; Buna ek olarak, C 84 sertlik ve düşük modüllü Si alt-tabaka için diğer Si substratlara karşılaştırılabilir Gömülü. Bu veriler C 84 optoelektronik önemli etkileri olan ve manyetik yarı iletken (DMS) nanoaygıtlar sulandırmak Si yüzeyler Gömülü düşündürmektedir.

Fulleren moleküller ve nedeniyle mükemmel yapısal özellikler, elektronik iletkenlik, mekanik mukavemet ve kimyasal özellikleri 1-4&#39;e de nano arasındaki ayırt edici ihtiva kompozit malzemeler. Bu malzemeler elektronik, bilgisayar, yakıt hücresi teknolojisi, güneş pilleri ve saha emisyon teknolojisi 5,6 gibi alanlarda, bir dizi son derece yararlı olduğu kanıtlanmıştır. Bu malzemeler arasında, silisyum karbür (SiC) nanoparçacık kompozitler, geniş bant boşluğu, yüksek ısı iletkenliği ve istikrar, yüksek elektrik arıza yeteneği, ve kimyasal eylemsizlik özellikle dikkat sayesinde aldık. Bu faydalar optoelektronik cihazlar özellikle açıktır, metal oksit yarıiletken alan etkili transistörler (MOSFET), ışık yayan diyotlar (LED&#39;ler) ve yüksek güç, yüksek frekans ve yüksek sıcaklık uygulamaları. Bununla birlikte, yüksek yoğunluklu kusurları yaygın Sözleşmenin yüzeyinde görülenÖnal silisyum karbür bile cihaz arızası 7,8 giden, elektronik yapısı üzerinde zararlı etkileri olabilir. SiC uygulaması 1960 yılından beri çalışılmıştır gerçeğine rağmen, bu özel çözümlenmemiş sorun olmaya devam etmektedir. Bu çalışmanın amacı, bir C 84 fabrikasyon sonuçlanan malzemelerin, elektronik optoelektronik, mekanik, manyetik, ve alan emisyon özelliklerinin kapsamlı bir anlayış elde etmek için Si substrat heteroeklem ve sonraki analizlere Gömülü oldu. Biz de moleküler dinamik hesaplamaları yeni uygulaması ile, nanomateryallerin özelliklerini tahmin etmek sayısal simülasyonu kullanarak sorunu ele.

<table><tbody><tr><td>Silicon wafer</td><td></td><td></td><td>Si(111). Type/Dopant: P/Boron; Resistivity: 0.05-0.1 Ohm&amp;#183;cm</td></tr><tr><td>Carbon, C&lt;sub&gt;84&lt;/sub&gt;</td><td>Legend Star</td><td></td><td>C&lt;sub&gt;84&lt;/sub&gt; powder, 98%</td></tr><tr><td>Hydrochloric acid</td><td>Sigma-Aldrich</td><td>84422</td><td>RCA, 37%</td></tr><tr><td>Ammonium</td><td>Choneye Pure Chemical</td><td></td><td>RCA, 25%</td></tr><tr><td>Hydrogen peroxide</td><td>Choneye Pure Chemical</td><td></td><td>RCA, 35%</td></tr><tr><td>Nitrogen</td><td>Ni Ni Air</td><td></td><td>high-pressure bottle, 95%</td></tr><tr><td>Tungsten</td><td>Nilaco</td><td>461327</td><td>wire, diameter 0.3 mm, tip</td></tr><tr><td>Sodium hydroxide</td><td>UCW</td><td>85765</td><td>etching Tungsten wire for tip</td></tr><tr><td>Acetone</td><td>Marcon Fine Chemicals</td><td>99920</td><td>suitable for liquid chromatography and UV-spectrophotometry</td></tr><tr><td>Methanol</td><td>Marcon Fine Chemicals</td><td>64837</td><td>suitable for liquid chromatography and UV-spectrophotometry</td></tr><tr><td>UHV-SPM</td><td>JEOL Ltd</td><td>JSPM-4500A</td><td>Ultrahigh Vacuum Scanning Tunneling Microscope and Ultrahigh Vacuum Atomic Force Microscope</td></tr><tr><td>Power supply</td><td>Keithley</td><td>237</td><td>High-Voltage Source-Measure Unit</td></tr><tr><td>SQUID</td><td>Quantum desigh</td><td>MPMS-7</td><td>Magnetic field strength: &amp;plusmn;7.0 Tesla, Temperature range: 2&amp;#8211;400 K, Magnetic-dipole range: 5&amp;nbsp;&amp;times;&amp;nbsp;10&lt;sup&gt;-7&lt;/sup&gt; &amp;#8211; 300 emu</td></tr><tr><td>ALPS</td><td>National Center for High-performance Computing, Taiwan</td><td></td><td>Advanced Large-scale Parallel Supercluster, 177Tflops; 25,600 CPU cores; 73,728 GB RAM; 1,074 TB storage</td></tr></tbody></table>

probing c84-embedded si substrate using scanning probe microscopy and molecular dynamics

Bu çalışma, bir dizi tasarlanmış Cı 84 Si substratı Gömülü bir ultra yüksek vakum odası içinde kontrollü bir kendi kendine montaj yöntemi kullanılarak imal bildirir. C 84 özellikleri, bu tür atom çözünürlüklü topoğrafya, devletlerin yerel elektronik yoğunluk, bant boşluk enerjisine, saha emisyon özelliklerinin, nanomekanik sertliği ve yüzey manyetizma olarak, Si yüzey Gömülü ultra altında yüzey analiz teknikleri kullanarak çeşitli incelendi yüksek vakum (UHV) koşullarının yanı sıra bir atmosfer sistemi. Deneysel sonuçlar C 84 yüksek tekdüzelik Si yüzey kontrollü bir öz-montaj nanoteknoloji mekanizmasını kullanarak, kesme aletleri alan emisyon ekran (FED), optoelektronik cihaz imalat, MEMS uygulanmasında önemli bir gelişmeyi temsil fabrikasyon Gömülü ve çabaları göstermek karbür yarı iletkenler için uygun bir yedek bulmak için. Yarı deneysel potansiyeli olan moleküler dinamik (MD) yöntemi olabilir bC 84 nanoindentation incelemek için kullanılan e Si substrat Gömülü. MD simülasyonunu yapmak için ayrıntılı bir açıklama sunulmuştur. Böyle girinti kuvveti, Young modülü, yüzey sertliği, atom stres ve atomik suşu olarak MD simülasyon mekanik analiz üzerine kapsamlı bir çalışma için ayrıntılar yer almaktadır. girinti modeli atom stres ve von Mises-gerinme dağılımları atomlarla düzeyde zaman değerlendirme ile deformasyon mekanizmasını izlemek için hesaplanabilir.

. Düzensiz Si (111) yüzeyi üzerinde Cı 84 moleküllerinin bir tek-tabakalı Şekil 1, bir UHV odasında kontrollü kendini montaj işlemi kullanılarak imal içerisinde değişik derecelerde UHV-STM tarafından ölçülen topografik görüntüleri bir dizi gösterilmektedir: (a) 0.01 mL, (b) 0.2 mL, (c) 0.7 mi, ve (d) 0.9 ml. C 84 gömülü Si substrat elektronik ve optik özellikleri aynı zamanda STM ve PL (Şekil 2) gibi yüzey analiz teknikleri, çeşitli kullanılarak incelenmiştir. Elde edilen numune mükemmel malzeme özelliklerini nanoteknoloji atom ve nano-ölçekte madde kontrolü için nasıl kullanılabileceğini göstermektedir. Şekil 3&#39;te MFM ve SQUID sonuçları C 84 gömülü alt tabakanın yüzey manyetizma gösterir. 4 teklif substratın nanomekanik bakın UHV-AFM sonuçları sunar Şekil. Bizim deney sonuçları C 84 potansiyelini göstermek </sUB&gt; yüksek sıcaklık, yüksek güç için nanoelektronik cihazlarda yarı iletken karbür alternatif olarak gömülü silikon alt-tabaka, yüksek frekanslı uygulamalar yanı sıra (Şekil 4&#39;te) manyetik ve MEMS cihazlar. Simülasyon bölümünde, tüm işlemler MD simülasyonları gerçekleştirmek için LAMMPS kullanılarak tamamlanır. Fulleren gömülü alt-tabakanın mekanik özellikleri (girinti gücü ve iletişim stresi) hesaplanır ve Şekil 6&#39;da gösterilmiştir. Farklı zaman adımında atomlu von Mises şekil değiştirme analizi lokal deformasyon karakterize etmek için kullanılır. Kertme derinliğinin bir fonksiyonu olarak mukabil anlık hesaplanarak OVITO ile görselleştirilmiştir Şekil 6&#39;daki uçlar görülebilir. Kertme derinliğinin bir fonksiyonu olarak girinti kuvvetinin sonucu sertliği H ile (Şekil 7), düşük modülü E hesaplanmasında kullanılır &lt;sub&gt; r (Şekil 7b) ve yükleme sertlik S C 84 tek tabaka (Şekil 8). Sonuçlar deneyle belirlenen bununla karşılaştırmak ve mekanik özellik değişimi yorumlamak için bir görüş daha detaylı noktası sağlar edilebilir. <img alt="Şekil 1" src="/files/ftp_upload/54235/54235fig1.jpg" /> Şekil 1: Farklı kapsama C 84 Gömülü Si substrat STM topografik görüntüler (40 x 40 nm 2) C si üzerinde adsorbe 84 molekülleri gösteren Serisi 2 V negatif örnek önyargı da (111) yüzey, UHV-STM tarafından ölçülen. içerisinde değişik derecelerde: (a) 0.01 mi, (b) 0.2 mL, (c) 0.7 mi, ve (d) 0.9 ml. <img alt="şekil 2" src="/files/ftp_upload/54235/54235fig2.jpg" /><br/&gt; Şekil 2: C 84 Elektronik özelliklerin ölçüleri Si substrat Gömülü (a) C 84 tek kendini monte katmanın gerilim eğrisinin vs IV eğrileri ve ayırıcı türevi iletkenlik (dl / dV), UHV-STM tarafından belirlenen. ; (B) elektrik alan eğrisi vs Alan emisyonu akım yoğunluğu; Bir kaynak ölçü birimi kullanılarak ölçülen, gömülü C 84 ile yüzeyin FN arsa karşılık gelen (c) Cı 84 tek kendi kendini monte tabakanın (D) Fotolüminesans spektrumu. Yeniden baskı referansı 12 izni ile. <a href="https://www-jove-com.remotexs.ntu.edu.sg/files/ftp_upload/54235/54235fig2large.jpg" target="_blank">Bu rakamın büyük halini görmek için lütfen buraya tıklayınız.</a> <img alt="Şekil 3," src="/files/ftp_upload/54235/54235fig3.jpg" /> Şekil 3: </strong&gt; C 84 Yüzey manyetizma Gömülü Si alt tabaka (a) C 84 ile gömülü Si Yüzey MFM görüntüsü.; (B) Mıknatıslanma döngü dış manyetik alanına karşı çizilen <a href="https://www-jove-com.remotexs.ntu.edu.sg/files/ftp_upload/54235/54235fig3large.jpg" target="_blank">bu rakamın daha büyük bir versiyonunu görmek için lütfen buraya tıklayınız.</a> <img alt="Şekil 4," src="/files/ftp_upload/54235/54235fig4.jpg" /> Şekil 4: UHV-AFM kullanılarak belirlenen C 84 Nanomekanik soruşturma Gömülü Si substrat düzensiz Si yüzeyinin Kuvvet mesafe analizi, 7 x 7 yüzeyi, Si yüzeyi içinde gömülü C 84 ve Si yüzeyinin tek kendini monte tabaka.. Yeniden yazdırmak referans 11 izni ile. <a href="https://www-jove-com.remotexs.ntu.edu.sg/files/ftp_upload/54235/54235fig4large.jpg" target="_blank">Tıklayınız</a>Bu rakamın büyük bir versiyonunu görmek için. <img alt="Şekil 5," src="/files/ftp_upload/54235/54235fig5.jpg" /> Şekil 5: simülasyon modeli oluşturmak için akış şeması dramatik Si (111) 7 x 7 modeli içine gömmek C 84 tek tabaka tek bir katman C 84 MD simülasyon ayarı göstermek ve Si (111) 7 x 7 yüzey.. Detay prosedürleri protokol 5. bölümünde görülebilir. <a href="https://www-jove-com.remotexs.ntu.edu.sg/files/ftp_upload/54235/54235fig5large.jpg" target="_blank">Bu rakamın büyük halini görmek için lütfen buraya tıklayınız.</a> <img alt="Şekil 6," src="/files/ftp_upload/54235/54235fig6.jpg" /> Şekil 6: Girinti kuvvet ve İletişim gerilme analizi Girinti kuvveti (siyah) ve girinti derinliğinin bir fonksiyonu olarak C 84 stresi (mavi) başvurun.. UçlarFarklı renk tüm atomların (VM ε) İlgili von Mises gerginlik gösteren ilgili anlık göstermektedir. Gerilme lokalizasyonu, ε VM ile sadece atomları&gt; 0.08 anlık gösterilmiştir görüntülemek temizlemek için. <a href="https://www-jove-com.remotexs.ntu.edu.sg/files/ftp_upload/54235/54235fig6large.jpg" target="_blank">Bu rakamın büyük halini görmek için lütfen buraya tıklayınız.</a> <img alt="Şekil 7," src="/files/ftp_upload/54235/54235fig7.jpg" /> Şekil 7:.. Sertlik ve düşük modül analizi (a) Sertlik ve Si yüzeyinde C 84 tek tabaka için girinti derinliğinin bir fonksiyonu olarak, (b) azaltılmış modül varyasyonu <a href="https://www-jove-com.remotexs.ntu.edu.sg/files/ftp_upload/54235/54235fig7large.jpg" target="_blank">bu rakamın daha büyük bir versiyonunu görmek için lütfen buraya tıklayınız.</a> Şekil 8: Yükleme sertlik analizi. Cı 84 / Si AFM deneyleri ile karşılaştırıldığında, MD simülasyonları belirlenen mesafenin bir fonksiyonu olarak sertlik yüklenmesi. Referans 16 modifiye. <a href="https://www-jove-com.remotexs.ntu.edu.sg/files/ftp_upload/54235/54235fig8large.jpg" target="_blank">Bu rakamın büyük halini görmek için lütfen buraya tıklayınız.</a>

Watch this Scientific Journal Video about Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics at JoVE.com

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

This paper reports the nanomaterial fabrication of a fullerene Si substrate inspected and verified by nanomeasurements and molecular dynamic simulation.

C problama<sub&gt; 84</sub&gt; Taramalı Uç Mikroskobu ve Molecular Dynamics Kullanarak Si Maddesini Gömülü

This paper reports an array-designed C84-embedded Si substrate fabricated using a controlled self-assembly method in an ultra-high vacuum chamber. The ...

probing-c84-embedded-si-substrate-using-scanning-probe-microscopy

Nanyang Technological University

Research

JoVE Journal

Engineering

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

11.7K Görüntüleme.  National Chung Hsing University. This paper reports the nanomaterial fabrication of a fullerene Si substrate inspected and verified by nanomeasurements and molecular dynamic simulation.

Video: Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Scanning-probe Single-electron Capacitance Spectroscopy

The integration of low-temperature scanning-probe techniques and single-electron capacitance spectroscopy represents a powerful tool to study the electronic quantum structure of small systems - including individual atomic dopants in semiconductors. Here we present a capacitance-based method, known as Subsurface Charge Accumulation (SCA) imaging, which is capable of resolving single-electron charging while achieving sufficient spatial resolution to image individual atomic dopants. The use of a capacitance technique enables observation of subsurface features, such as dopants buried many nanometers beneath the surface of a semiconductor material1,2,3. In principle, this technique can be applied to any system to resolve electron motion below an insulating surface.
As in other electric-field-sensitive scanned-probe techniques4, the lateral spatial resolution of the measurement depends in part on the radius of curvature of the probe tip. Using tips with a small radius of curvature can enable spatial resolution of a few tens of nanometers. This fine spatial resolution allows investigations of small numbers (down to one) of subsurface dopants1,2. The charge resolution depends greatly on the sensitivity of the charge detection circuitry; using high electron mobility transistors (HEMT) in such circuits at cryogenic temperatures enables a sensitivity of approximately 0.01 electrons/Hz&frac12; at 0.3 K 5.

Scanning-probe single-electron capacitance spectroscopy facilitates the study of single-electron motion in localized subsurface regions. A sensitive charge-detection circuit is incorporated into a cryogenic scanning probe microscope to investigate small systems of dopant atoms beneath the surface of semiconductor samples.

Tarama-prob Tek elektron Kapasite Spektroskopisi

The integration of low-temperature scanning-probe techniques and single-electron capacitance spectroscopy represents a powerful tool to study the ...

Mühendislik

Investigating Single Molecule Adhesion by Atomic Force Spectroscopy

Atomic force spectroscopy is an ideal tool to study molecules at surfaces and interfaces. An experimental protocol to couple a large variety of single molecules covalently onto an AFM tip is presented. At the same time the AFM tip is passivated to prevent unspecific interactions between the tip and the substrate, which is a prerequisite to study single molecules attached to the AFM tip. Analyses to determine the adhesion force, the adhesion length, and the free energy of these molecules on solid surfaces and bio-interfaces are shortly presented and external references for further reading are provided. Example molecules are the poly(amino acid) polytyrosine, the graft polymer PI-g-PS and the phospholipid POPE (1-palmitoyl-2-oleoyl-sn-glycero-3-phosphoethanolamine). These molecules are desorbed from different surfaces like CH3-SAMs, hydrogen terminated diamond and supported lipid bilayers under various solvent conditions. Finally, the advantages of force spectroscopic single molecule experiments are discussed including means to decide if truly a single molecule has been studied in the experiment.

A protocol to couple a large variety of single molecules covalently onto an AFM tip is presented. Procedures and examples to determine the adhesion force and free energy of these molecules on solid supports and bio-interfaces are provided.

Atomik Kuvvet Spektroskopi Tek Molekül Yapışma incelenmesi

Atomic force spectroscopy is an ideal tool to study molecules at surfaces and interfaces. An experimental protocol to couple a large variety of single ...

Hand Controlled Manipulation of Single Molecules via a Scanning Probe Microscope with a 3D Virtual Reality Interface

Considering organic molecules as the functional building blocks of future nanoscale technology, the question of how to arrange and assemble such building blocks in a bottom-up approach is still open. The scanning probe microscope (SPM) could be a tool of choice; however, SPM-based manipulation was until recently limited to two dimensions (2D). Binding the SPM tip to a molecule at a well-defined position opens an opportunity of controlled manipulation in 3D space. Unfortunately, 3D manipulation is largely incompatible with the typical 2D-paradigm of viewing and generating SPM data on a computer. For intuitive and efficient manipulation we therefore couple a low-temperature non-contact atomic force/scanning tunneling microscope (LT NC-AFM/STM) to a motion capture system and fully immersive virtual reality goggles. This setup permits &#34;hand controlled manipulation&#34; (HCM), in which the SPM tip is moved according to the motion of the experimenter&#39;s hand, while the tip trajectories as well as the response of the SPM junction are visualized in 3D. HCM paves the way to the development of complex manipulation protocols, potentially leading to a better fundamental understanding of nanoscale interactions acting between molecules on surfaces. Here we describe the setup and the steps needed to achieve successful hand-controlled molecular manipulation within the virtual reality environment.

We demonstrate the precise manipulation of individual organic molecules on a metal surface with the tip of a scanning probe microscope driven in 3D by the experimenter's hand using a motion capture system and fully immersive virtual reality goggles.

El 3D Sanal Gerçeklik Arayüzü ile bir Tarama Prob Mikroskobu üzerinden Tek Moleküllerin Manipülasyon Kontrollü

Considering organic molecules as the functional building blocks of future nanoscale technology, the question of how to arrange and assemble such building ...

Probing The Structure And Dynamics Of Nucleosomes Using Atomic Force Microscopy Imaging

Chromatin, which is a long chain of nucleosome subunits, is a dynamic system that allows for such critical processes as DNA replication and transcription to take place in eukaryotic cells. The dynamics of nucleosomes provides access to the DNA by replication and transcription machineries, and critically contributes to the molecular mechanisms underlying chromatin functions. Single-molecule studies such as atomic force microscopy (AFM) imaging have contributed significantly to our current understanding of the role of nucleosome structure and dynamics. The current protocol describes the steps enabling high-resolution AFM imaging techniques to study the structural and dynamic properties of nucleosomes. The protocol is illustrated by AFM data obtained for the centromere nucleosomes in which H3 histone is replaced with its counterpart centromere protein A (CENP-A). The protocol starts with the assembly of mono-nucleosomes using a continuous dilution method. The preparation of the mica substrate functionalized with aminopropyl silatrane (APS-mica) that is used for the nucleosome imaging is critical for the AFM visualization of nucleosomes described and the procedure to prepare the substrate is provided. Nucleosomes deposited on the APS-mica surface are first imaged using static AFM, which captures a snapshot of the nucleosome population. From analyses of these images, such parameters as the size of DNA wrapped around the nucleosomes can be measured and this process is also detailed. The time-lapse AFM imaging procedure in the liquid is described for the high-speed time-lapse AFM that can capture several frames of nucleosome dynamics per second. Finally, the analysis of nucleosome dynamics enabling the quantitative characterization of the dynamic processes is described and illustrated.

Here, we present a protocol to characterize nucleosome particles at the single-molecule level using static and time-lapse atomic force microscopy (AFM) imaging techniques. The surface functionalization method described allows for the capture of the structure and dynamics of nucleosomes in high-resolution at the nanoscale.

Atomik kuvvet mikroskobu Imaging'i kullanma oluşturarlar dinamikleri ve yapısını sondalama

Chromatin, which is a long chain of nucleosome subunits, is a dynamic system that allows for such critical processes as DNA replication and transcription ...

Biyokimya

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Electrically assisted deformation (EAD) is increasingly being used to improve the formability of metals during processes such as sheet metal rolling and forging. Adoption of this technique is proceeding despite disagreement concerning the underlying mechanism responsible for EAD. The experimental procedure described herein enables a more explicit study compared to previous EAD research by removing thermal effects, which are responsible for disagreement in interpreting previous EAD results. Furthermore, as the procedure described here enables EAD observation in situ and in real time in a transmission electron microscope (TEM), it is superior to existing post-mortem methods that observe EAD effects post-test. Test samples consist of a single crystal copper (SCC) foil having a free-standing tensile test section of nanoscale thickness, fabricated using a combination of laser and ion beam milling. The SCC is mounted to an etched silicon base that provides mechanical support and electrical isolation while serving as a heat sink. Using this geometry, even at high current density (~3,500 A/mm2), the test section experiences a negligible temperature increase (&#60;0.02 &#176;C), thus eliminating Joule heating effects. Monitoring material deformation and identifying the corresponding changes to microstructures, e.g. dislocations, are accomplished by acquiring and analyzing a series of TEM images. Our sample preparation and in situ experiment procedures are robust and versatile as they can be readily utilized to test materials with different microstructures, e.g., single and polycrystalline copper.

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Isolating electrical and thermal effects on electrically assisted deformation (EAD) is very difficult using macroscopic samples. Metallic sample micro- and nanostructures together with a custom test procedure have been developed to evaluate the impact of applied current on the formation without joule heating and evolution of dislocations on these samples.

Için yeni bir yöntem<em&gt; Yerinde</emNanoscale Örneklerinin Elektromekanik Karakterizasyonu

Electrically assisted deformation (EAD) is increasingly being used to improve the formability of metals during processes such as sheet metal rolling and ...

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

The miniaturization of semiconductor devices to scales where small numbers of dopants can control device properties requires the development of new techniques capable of characterizing their dynamics. Investigating single dopants requires sub-nanometer spatial resolution, which motivates the use of scanning tunneling microscopy (STM). However, conventional STM is limited to millisecond temporal resolution. Several methods have been developed to overcome this shortcoming, including all-electronic time-resolved STM, which is used in this study to examine dopant dynamics in silicon with nanosecond resolution. The methods presented here are widely accessible and allow for local measurement of a wide variety of dynamics at the atomic scale. A novel time-resolved scanning tunneling spectroscopy technique is presented and used to efficiently search for dynamics.

We demonstrate an all-electronic method to observe nanosecond-resolved charge dynamics of dopant atoms in silicon with a scanning tunneling microscope.

Tüm elektronik Nanosecond çözüldü tarama tünelleme mikroskobu: tek Dopant şarj Dynamics incelenmesi kolaylaştırılması

The miniaturization of semiconductor devices to scales where small numbers of dopants can control device properties requires the development of new ...

Characterizing Individual Protein Aggregates by Infrared Nanospectroscopy and Atomic Force Microscopy

The phenomenon of protein misfolding and aggregation results in the formation of highly heterogeneous protein aggregates, which are associated with neurodegenerative conditions such as Alzheimer&#8217;s and Parkinson&#8217;s diseases. In particular low molecular weight aggregates, amyloid oligomers, have been shown to possess generic cytotoxic properties and are implicated as neurotoxins in many forms of dementia. We illustrate the use of methods based on atomic force microscopy (AFM) to address the challenging task of characterizing the morphological, structural and chemical properties of these aggregates, which are difficult to study using conventional structural methods or bulk biophysical methods because of their heterogeneity and transient nature. Scanning probe microscopy approaches are now capable of investigating the morphology of amyloid aggregates with sub-nanometer resolution. We show here that infrared (IR) nanospectroscopy (AFM-IR), which simultaneously exploits the high resolution of AFM and the chemical recognition power of IR spectroscopy, can go further and enable the characterization of the structural properties of individual protein aggregates, and thus offer insights into the aggregation mechanisms. Since the approach that we describe can be applied also to the investigations of the interactions of protein assemblies with small molecules and antibodies, it can deliver fundamental information to develop new therapeutic compounds to diagnose or treat neurodegenerative disorders.

We describe the application of infrared nanospectroscopy and high-resolution atomic force microscopy to visualize the process of protein self-assembly into oligomeric aggregates and amyloid fibrils, which is closely associated with the onset and development of a wide range of human neurodegenerative disorders.

Bireysel Protein Agregalarının Kızılötesi Nanospektroskopi ve Atomik Kuvvet Mikroskobu ile Karakterizeleştirilmesi

The phenomenon of protein misfolding and aggregation results in the formation of highly heterogeneous protein aggregates, which are associated with ...

Probing Surface Electrochemical Activity of Nanomaterials using a Hybrid Atomic Force Microscope-Scanning Electrochemical Microscope (AFM-SECM)

Scanning electrochemical microscopy (SECM) is used to measure the local electrochemical behavior of liquid/solid, liquid/gas and liquid/liquid interfaces. Atomic force microscopy (AFM) is a versatile tool to characterize micro- and nanostructure in terms of topography and mechanical properties. However, conventional SECM or AFM provides limited laterally resolved information on electrical or electrochemical properties at nanoscale. For instance, the activity of a nanomaterial surface at crystal facet levels is difficult to resolve by conventional electrochemistry methods. This paper reports the application of a combination of AFM and SECM, namely, AFM-SECM, to probe nanoscale surface electrochemical activity while acquiring high-resolution topographical data. Such measurements are critical to understanding the relationship between nanostructure and reaction activity, which is relevant to a wide range of applications in material science, life science and chemical processes. The versatility of the combined AFM-SECM is demonstrated by mapping topographical and electrochemical properties of faceted nanoparticles (NPs) and nanobubbles (NBs), respectively. Compared to previously reported SECM imaging of nanostructures, this AFM-SECM enables quantitative assessment of local surface activity or reactivity with higher resolution of surface mapping.

Probing Surface Electrochemical Activity of Nanomaterials using a Hybrid Atomic Force Microscope-Scanning Electrochemical Microscope AFM-SECM

Atomic force microscopy (AFM) combined with scanning electrochemical microscopy (SECM), namely, AFM-SECM, can be used to simultaneously acquire high-resolution topographical and electrochemical information on material surfaces at nanoscale. Such information is critical to understanding heterogeneous properties (e.g., reactivity, defects, and reaction sites) on local surfaces of nanomaterials, electrodes and biomaterials.

Hibrit Atomik Kuvvet Mikroskobu-Taramalı Elektrokimyasal Mikroskop (AFM-SECM) Kullanarak Nanomalzemelerin Yüzey Elektrokimyasal Aktivitesinin Yoklandırılması

Scanning electrochemical microscopy (SECM) is used to measure the local electrochemical behavior of liquid/solid, liquid/gas and liquid/liquid interfaces. ...

Kimya

Microscopic Visualization of Porous Nanographenes Synthesized through a Combination of Solution and On-Surface Chemistry

On-surface synthesis has recently been regarded as a promising approach for the generation of new molecular structures. It has been particularly successful in the synthesis of graphene nanoribbons, nanographenes and intrinsically reactive and instable, yet attractive species. It is based on the combination of solution chemistry aimed at preparation of appropriate molecular precursors for further ultra-high vacuum surface assisted transformations. This approach also owes its success to an incredible development of characterization techniques, such as scanning tunneling/atomic force microscopy and related methods, which allow detailed, local characterization at atomic scale. While the surface-assisted synthesis can provide molecular nanostructures with outstanding precision, down to single atoms, it suffers from basing on metallic surfaces and often limited yield. Therefore, the extension of the approach away from metals and the struggle to increase productivity seem to be significant challenges toward wider applications. Herein, we demonstrate the on-surface synthesis approach for generation of non-planar nanographenes, which are synthesized through a combination of solution chemistry and sequential surface-assisted processes, together with the detailed characterization by scanning probe microscopy methods.

<meta charset="utf8"></head><body>Çözelti ve Yüzey Kimyası Kombinasyonu ile Sentezlenen Gözenekli Nanografenlerin Mikroskobik Görüntülenmesi

A combination of solution and surface assisted synthesis opens new directions in the atomically precise synthesis of nanostructures. Scanning tunneling microscopy (STM) supplemented by non-contact atomic force microscopy (nc-AFM) enables detailed characterization of newly designed and generated carbon-based nano-objects.

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