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第10 章

半導体の基礎

固体中のエネルギーバンド
固体中のエネルギーバンド
Solids are composed of atoms with distinct electronic configurations and energy levels. When two identical isolated atoms are brought close together, ...
半導体
半導体
Materials are broadly categorized into three types as metals, insulators, and semiconductors. Metals have no energy band gap due to the overlap of the ...
半導体の種類
半導体の種類
A pure silicon wafer used in integrated circuits is an intrinsic semiconductor that lacks impurities and exhibits low electrical conductivity. At zero ...
キャリアの生成と再結合
キャリアの生成と再結合
Carrier generation refers to the creation of electron-hole pairs. Band-to-band generation occurs in direct band gap semiconductors via thermal excitation ...
キャリアトランスポート
キャリアトランスポート
Carrier transport in semiconductors generates current, through drift and diffusion mechanisms. Drift current arises when an external electric field causes ...
PN接合
PN接合
Solar streetlights function independently without the requirement of an external power supply, as they contain p-n junctions within their solar cells. A ...
PN接合のバイアス
PN接合のバイアス
The p-n junction within an LED requires external biasing to produce light. Forward biasing involves applying a voltage across the p-n junction with the ...
金属-半導体接合
金属-半導体接合
Contact between a Metal and a semiconductor forms a junction with either Schottky or Ohmic behavior. If the metal's work function exceeds that of the ...
金属-半導体接合のバイアス
金属-半導体接合のバイアス
Biasing metal and n-type semiconductor junctions involves applying a voltage to metal while grounding the semiconductor. The resulting current is positive ...
フェルミレベル
フェルミレベル
The Fermi-Dirac function, represented by a sigmoid curve, indicates the probability of an energy state being occupied by an electron at a given ...
フェルミレベルダイナミクス
フェルミレベルダイナミクス
The vacuum level represents the energy threshold for an electron to escape a material's surface. It typically lies above a semiconductor's ...
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