Source: Faisal Alamgir, School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA
X-ray photoelectron spectroscopy (XPS) is a technique that measures the elemental composition, empirical formula, chemical state and electronic state of the elements that exist within a material. XPS spectra are obtained by irradiating a material with a beam of X-rays while simultaneously measuring the kinetic energy and number of electrons that escape from the top several nanometers of the material being analyzed (within ~ the top 10 nm, for typical kinetic energies of the electrons). Due to the fact that the signal electrons escape predominantly from within the first few nanometers of the material, XPS is considered a surface analytical technique.
The discovery and the application of the physical principles behind XPS or, as it was known earlier, electron spectroscopy for chemical analysis (ESCA), led to two Nobel prizes in physics. The first was awarded in 1921 to Albert Einstein for his explanation of the photoelectric effect in 1905. The photoelectric effect underpins the process by which signal is generated in XPS. Much later, Kai Siegbahn developed ESCA based on some of the early works by Innes, Moseley, Rawlinson and Robinson, and recorded, in 1954, the first high-energy-resolution XPS spectrum of NaCl. Further demonstration of the power of ESCA/XPS for chemical analysis, together with the development of the associated instrumentation for the technique, led to the first commercial monochromatic XPS instrument in 1969 and the Nobel Prize for Physics in 1981 to Siegbahn in acknowledgement of his extensive efforts to develop the technique as an analytical tool.
In XPS, incident X-rays from a source, typically Al Kα, with photon energy of 1486.7 eV, irradiate a sample and, meeting the threshold binding energies of some (if not all) of the core electrons in the constituent atoms in a material, eject these core electrons past the Fermi energy (E_f). Al Kα is a specific X-ray fluorescence emitted during the relaxation of Al atoms that have been taken to excited states through the ejection of their 1s electrons. If the energy of the source X-rays (Es) is sufficiently high, then the core electron can meet the threshold work function (ϕ) needed to get past the vacuum level (E_vac) and emerge with remnant kinetic energy. These electrons are called photoelectrons, and provided that they are close enough to the surface, they can emerge from the surface of the sample and be picked up by an energy discriminating electron detector. Such a detector measures the kinetic energy of the photoelectron (KE), which can be used to calculate the binding energy (BE) of the electrons:
BE = ES-Φ - KE
Because the inelastic mean free path (IMFP) of the signal electrons is only a few nanometers (i.e. the average distance that electrons travel between inelastic scattering events is a few nanometers XPS requires ultra-high vacuum (UHV) conditions within the measurement chamber.The detection limits for most of the elements are on the order of parts per thousand range (1,000 PPM). In order to achieve better detection limits of parts per million (ppm), the technique requires either a high concentration of the species being detected at top surface or very long collection time (multiple hours). The resulting data will be in the form of a spectrum where an intensity (representing the counts per second of electrons hitting the detector) versus the binding energy. Provided that the X-ray source is energetic enough to eject electrons from particular electronic states of the atoms in the material, there will be one or more corresponding peaks in the spectrum. The BE of a certain peak of an element in the spectrum can then be compared to those of reference materials, or to tabulated values in databases, in order to determine the "chemical state" of that element in the sample. The intensity of a certain elemental peak is, of course, proportional to the concentration of that element in the sample. However, because the probabilities of ionizing different electron states vary, the conversion of the measured counts under spectral peaks to concentrations values will require the normalization of the counts by "sensitivity factors" that corrects for these differing probabilities.
The XPS system can accommodate thin films, bulk samples up to ~ 1cm thick, and powder samples. The sample stage here is 60 mm by 60 mm and can hold as many samples as will fit into this area. Films can be inorganic or organic/biological as long as they are dry.
The following procedure applies to a specific XPS instrument and its associated software, and there may be some variations when other instruments are used.
Figure 1 shows a survey spectrum from the sample, clearly showing the Pt, Si, C and O emissions. In Figure 2, we see the high resolution scan of the Pt 4f7/2 and 4f5/2 peaks from the sample. The binding energies of each of the core level peaks can be compared to those found in databases such as the one maintained by the National Institute of Standards and Technology (NIST) (at https://srdata.nist.gov/xps/Default.aspx). The subtle shifts in binding energy relative to those of the reference compounds in the database can reveal the chemical state of each of the elements in your sample. The intensity ratio of the peaks will reveal the surface composition.
Figure 1: A survey spectrum from the sample, clearly showing the Pt, Si, C and O emissions.
Figure 2: High resolution scan of the Pt 4f7/2 and 4f5/2 peaks from the sample.
XPS is a surface chemical analysis technique that is versatile in the range of samples it can be used to investigate. The technique provides quantification of chemical composition, chemical state and the occupied electronic structure of the atoms within a material.
XPS provides elemental the composition of the surface (within 1-10 nm usually), and can be used to determine the empirical formula of the surface compounds, the identity of elements that contaminate a surface, the chemical or electronic state of each element in the surface, the uniformity of composition across top surface and through the depth (by sequentially milling into the material and taking XPS data of the new exposed surface).
Routinely, XPS is used to analyze a wide range of materials, for example metal alloys, other inorganic compounds such as ceramics, polymers, semiconductors, catalysts, glasses, parts of plants biological materials such as cells, bones and many others.
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