Name: fabrication of flexible image sensor based on lateral nipin phototransistors
Uploaded: 2018-06-23T14:00:00.000+00:00
Duration: 9 min 59 s
Description: Watch this Scientific Journal Video about Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors at JoVE.com

这项研究得到了由科学和信息和通信技术部 (NRF-2017M3D1A1039288) 资助的韩国国家研究基金会 (NRF) 的创造性材料发现计划的支持。此外, 这项研究得到了由韩国政府资助的信息和通信技术促进 (IITP) 赠款研究所 (MSIP) 的支持 (2017000709 号, 物理仿制加密基元的综合方法, 使用随机激光器和光电子)。

注意: 本议定书中使用的一些化学物质 (如, 氢氟酸, 缓冲氧化物蚀刻, 异丙醇等) 可能危害健康。在样品准备发生之前, 请查阅所有相关的材料安全数据表。使用适当的个人防护设备 (如, 实验室大衣, 安全眼镜, 手套) 和工程控制 (如, 湿站, 油烟机) 处理腐蚀剂和溶剂。
1. Si 掺杂和分离
注: 见图 1a - 1d。
<ol><li>用离子注入制备掺杂的 SOI 晶片, 其条件如下: 掺杂剂-磷/硼, 80/50 凯文的能量, 以及 5 x 1015/3 x 10 15 厘米-3的剂量 , 分别为 n+和 p+掺杂。为了恢复晶圆的结晶度, 在离子注入后, 在炉内1000摄氏度的温度下, 将试样退火120分钟。利用国家 NanoFab 中心 (NNFC) 的离子注入工艺制备掺杂样品, 使其具有较高的工艺稳定性和深层掺杂深度 (图 1a)。</li>
	<li>要除去本机氧化物, 请使用在缓冲氧化物蚀刻 (教委) 中的聚四氟乙烯北斗七星蘸 5 s, 然后用丙酮、异丙醇 (IPA) 和去离子 (DI) 水, 依次清洗切片样品。</li>
	<li>形成 Si 隔离的光刻胶 (PR) 图案 (图 1b)。<ol>
<li>自旋涂层正面 PR 在样品在4000转每分钟四十年代和软烘烤涂层的样品在90°c 九十年代. 在十年代将样品暴露在紫外线照射下。</li>
		<li>将样品浸入显影中1分钟以定义图案, 在 DI 水中清洗, 用镊子将其烘干, 用2喷枪。硬烘烤样品硬化的 PR 层在110°c 5 分钟。</li>
	</ol>
</li>
	<li>用电感耦合等离子体-反应离子蚀刻 (icp), 用 100 w 射频功率、0 w ICP 功率、30 mTorr 腔压力和 SF6气体 (40 sccm) 对6分钟进行干蚀刻 (图 1c)。</li>
	<li>要去除埋氧化层, 使用聚四氟乙烯北斗 (图 1d) 将氢氟酸49% 中的样品蘸2分钟。</li>
	<li>用丙酮、IPA 和 DI 水对样品进行连续清洗。要去除水分, 用2喷枪干燥样品, 同时用镊子握住。</li>
</ol>2. 牺牲氧化物层沉积
注: 见图 1e - 1g。
<ol><li>使用等离子增强化学气相沉积 (PECVD), 以230°c、20 W 射频功率、1000 mTorr 压力、有罪4气体 (100 sccm) 和 N2O 气体 (800 sccm) 为2分钟 , 以 130 nm 厚度的2牺牲层沉积;图 1e)。</li>
	<li>将 PR 层模式作为2牺牲层的掩码 (图 1f)。<ol>
<li>自旋涂层正面 PR 在样品在4000转每分钟四十年代和软烘烤涂层的样品在90°c 九十年代. 在十年代将样品暴露在紫外线照射下。</li>
		<li>将样品浸入显影中1分钟以定义图案, 在 DI 水中清洗, 用镊子将其烘干, 用 N2喷枪。硬烘烤样品硬化的 PR 层在110°c 5 分钟。</li>
	</ol>
</li>
	<li>PECVD 氧化物层的图案, 使用聚四氟乙烯北斗 (图 1g) 将样品浸在英国央行三十年代。</li>
	<li>用丙酮、IPA 和 DI 水对样品进行连续清洗。要去除水分, 用2喷枪干燥样品, 同时用镊子握住。</li>
</ol>3. 第一层聚酰亚胺的沉积和首次金属化
<ol><li>自旋涂层聚酰亚胺 (PI) 在样品在4000转每分钟六十年代, 退火它在110°c 为3分钟和在150°c 为10分钟在热的板材, 并且退火它在230°c 为60分钟在 n2大气中提供 N2到烤箱 (图 1h)。</li>
	<li>使用 PECVD 的温度为230°c、20 W 射频功率、1000 mTorr 压力、有罪4气体 (100 sccm) 和 N2O 气体 (800 sccm) 的2分钟, 将2层的厚度存入 130 nm。</li>
	<li>图案的2作为一个硬掩膜层为 PI 干蚀刻 (图 1i)。<ol>
<li>自旋涂层正面 PR 在样品在4000转每分钟四十年代和软烘烤涂层的样品在90°c 九十年代. 在十年代将样品暴露在紫外线照射下。</li>
		<li>将样品浸入显影中1分钟以定义图案, 在 DI 水中清洗, 用镊子将其烘干, 用2喷枪。硬烘烤样品硬化的 PR 层在110°c 5 分钟。</li>
		<li>要图案的2硬面具, 在英国央行三十年代使用聚四氟乙烯北斗, 清洁它在 DI 水, 并烘干它与2喷枪, 而持有它与镊子。</li>
	</ol>
</li>
	<li>干法蚀刻 PI 使用 30 W 射频功率, O2气体 (30 sccm) 和 Ar 气体 (70 sccm) 为20分钟。</li>
	<li>要除去 PECVD 氧化物层, 请在三十年代用聚四氟乙烯北斗七星蘸上样品。</li>
	<li>用丙酮、IPA 和 DI 水对样品进行连续清洗。要去除水分, 用2喷枪干燥样品, 同时用镊子握住。</li>
	<li>用溅射法沉积铬/Au 10 nm/200 纳米厚度。</li>
	<li>图案的 Cr/金金属层 (图 1j)。<ol>
<li>自旋涂层正面 PR 在样品在4000转每分钟四十年代和软烘烤涂层的样品在90°c 九十年代. 在十年代将样品暴露在紫外线照射下。</li>
		<li>将样品浸入显影中1分钟以定义图案, 在 DI 水中清洗, 用镊子将其烘干, 用2喷枪。要硬化 PR, 硬烤样品在110°c 5 分钟。</li>
		<li>分别用湿蚀刻对 60 s/20 的铬/金层进行蚀刻。</li>
	</ol>
</li>
	<li>用丙酮、IPA 和 DI 水对样品进行连续清洗。要去除水分, 用2喷枪干燥样品, 同时用镊子握住。 注意: 清洗过程必须非常小心, 因为有剥离 PI 层的风险。</li>
</ol>4. 第二层聚酰亚胺的沉积和第二金属化的性能
<ol><li>自旋外套 PI 在样品在 4000 rpm 为六十年代, 退火它在110°c 为3分钟和在150°c 为10分钟在热的板材, 并且退火它在230°c 为60摄氏度在 n2大气中提供 N2到烤箱 (图 1k)。</li>
	<li>使用 PECVD 的温度为230摄氏度、20 W 射频功率、1000 mTorr 压力、有罪4气体 (100 sccm) 和 N2O 气体 (800 sccm) 的2分钟, 将2层的厚度与 130 nm 沉积。</li>
	<li>图案的2作为硬掩膜层为干蚀刻 (图 1l)。<ol>
<li>自旋涂层正面 PR 在样品在4000转每分钟四十年代和软烘烤涂层的样品在90°c 九十年代. 在十年代将样品暴露在紫外线照射下。</li>
		<li>将样品浸入显影中1分钟以定义图案, 在 DI 水中清洗, 用镊子将其烘干, 用2喷枪。硬烘烤样品硬化的 PR 层在110°c 5 分钟。</li>
		<li>要图案的2硬面具, 在英国央行三十年代使用聚四氟乙烯北斗, 清洁它在 DI 水, 并烘干它与2喷枪, 而持有它与镊子。</li>
	</ol>
</li>
	<li>干法蚀刻 PI 使用 30 W 射频功率, O2气体 (30 sccm) 和 Ar 气体 (70 sccm) 为50分钟。</li>
	<li>要除去 PECVD 氧化物层, 请在三十年代用聚四氟乙烯北斗七星蘸上样品。</li>
	<li>用丙酮、IPA 和 DI 水对样品进行连续清洗。</li>
	<li>用溅射涂层沉积铬/Au 10 nm/200 纳米厚度。</li>
	<li>图案的 Cr/金金属层 (图 1m)。<ol>
<li>自旋涂层正面 PR 在样品在4000转每分钟四十年代和软烘烤涂层的样品在90°c 九十年代. 在十年代将样品暴露在紫外线照射下。</li>
		<li>将样品浸入显影中1分钟以定义图案, 在 DI 水中清洗, 用镊子将其烘干, 用2喷枪。硬烘烤样品硬化的 PR 层在110°c 5 分钟。</li>
		<li>分别用湿蚀刻对铬/金层进行 60 s/20 的蚀刻。</li>
	</ol>
</li>
	<li>用丙酮、IPA 和 DI 水对样品进行连续清洗。</li>
	<li>要除去水分, 用镊子将干净的衬底干燥, 用氮气喷枪。 注: 有剥离聚酰亚胺层的风险, 所以要非常小心地执行清洗过程。</li>
</ol>5. 用 PI 和孔和网格结构封装样品
<ol><li>自旋外套 PI 在样品在 4000 rpm 为六十年代, 退火它在110°c 为3分钟和在150°c 为10分钟在热的板材, 并且退火它在230°c 为60摄氏度在 n2大气中提供 N2到烤箱 (图 1n)。</li>
	<li>使用 PECVD 的温度为230摄氏度、20 W 射频功率、1000 mTorr 压力、有罪4气体 (100 sccm) 和 N2O 气体 (800 sccm) 的8分钟, 将2层的厚度与 650 nm 沉积。</li>
	<li>图案的2作为硬掩膜层为干蚀刻。<ol>
<li>自旋涂层正面 PR 在样品在4000转每分钟四十年代和软烘烤涂层的样品在90°c 九十年代. 在十年代将样品暴露在紫外线照射下。</li>
		<li>将样品浸入显影中2分钟以定义图案, 在 DI 水中清洗, 用镊子将其烘干, 用2喷枪。硬烘烤样品硬化的 PR 层在110°c 5 分钟。</li>
		<li>要图案的2硬面具, 浸在京东方的样本1分钟三十年代使用聚四氟乙烯北斗七星, 清洁它在 DI 水, 并烘干它与 N2喷枪, 同时持有它与镊子。 注意: 由于阵列的尺寸小, 因此有必要让它比以前的开发时间长。</li>
	</ol>
</li>
	<li>干法蚀刻 PI 使用 30 W 射频功率, O2气体 (30 sccm) 和 Ar 气体 (70 sccm) 为75分钟。</li>
	<li>用 100 w 射频功率、0 w icp 功率、30 mTorr 腔压力、40 sccm SF6气体 (图 1o) 对硅进行干法蚀刻。</li>
	<li>要去除 PECVD 氧化物层, 使用聚四氟乙烯北斗七星, 将样品浸在英国央行1分钟三十年代。</li>
	<li>用丙酮、IPA 和 DI 水对样品进行连续清洗。</li>
	<li>使用 PECVD 的温度为230摄氏度、20 W 射频功率、1000 mTorr 压力、有罪4气体 (100 sccm) 和 N2O 气体 (800 sccm) 的2分钟, 将2层的厚度与 130 nm 沉积。</li>
	<li>图案的2作为硬掩膜层为干蚀刻。<ol>
<li>自旋涂层正面 PR 在样品在4000转每分钟四十年代和软烘烤涂层的样品在90°c 九十年代. 在十年代将样品暴露在紫外线照射下。</li>
		<li>将样品浸入显影中1分钟以定义图案, 在 DI 水中清洗, 用镊子将其烘干, 用2喷枪。硬烘烤样品硬化的 PR 层在110°c 5 分钟。</li>
		<li>要图案的2硬面具, 浸在京东方的样本1分钟三十年代使用聚四氟乙烯北斗七星, 清洁它在 DI 水, 并烘干它与 N2喷枪, 同时持有它与镊子。</li>
	</ol>
</li>
	<li>干燥蚀刻 PI 由 30 W 射频功率, O2气体 (30 sccm), Ar 气体 (70 sccm) 为75分钟。</li>
	<li>要除去 PECVD 氧化物层, 请在三十年代用聚四氟乙烯北斗七星蘸上样品。</li>
	<li>用丙酮、IPA 和 DI 水对样品进行连续清洗。去除水分, 用2喷枪干燥干净的样品, 同时用镊子握住它。</li>
</ol>6. 蚀刻牺牲层并将样品转移到柔性基板上
注: 见图 2。
<ol><li>用氢氟酸49% 中的样品浸泡20分钟 (图 2a; 嵌入), 蚀刻牺牲层。</li>
	<li>用 DI 水冲洗样品。</li>
	<li>使用刮水器的毛细管现象来吸收衬底和设备之间的湿气后, 用2喷枪干燥干净的样品, 同时用镊子将其取出, 以除去剩余的水分 (图 2a)。<ol>
<li>完成样品的冲洗和烘干过程。由于器件与基体之间的附着力很低, 所以必须非常小心地进行, 以免使基体和器件分离。</li>
	</ol>
</li>
	<li>用碳带保存样品, 并附上水溶性胶带。</li>
	<li>在瞬间剥离水溶性胶带, 防止设备残留在基体上 (图 2b)。</li>
	<li>确认样品附着在水溶性胶带上。</li>
	<li>将样品转移到烷涂覆的聚对苯二甲酸乙二醇酯 (PET) 薄膜 (图 2c)。<ol>
<li>准备 (10:1 混合物的预聚体: 固化剂), 并去除任何气泡在该硅烷脱气。</li>
		<li>自旋涂层在 pet 薄膜上的 1000 rpm 三十年代和烘烤 pet 薄膜在一个热板上的温度为110摄氏度10分钟。</li>
		<li>三十年代将样品暴露在紫外线照射下, 以改善其附着力, 并将水溶性胶带与样品连接在该聚酯薄膜上。 注: UV 处理增强了对其表面的附着力。</li>
	</ol>
</li>
	<li>要除去水溶性胶带, 用吸管小心地将水放在上面。用缓慢的水流除去水溶性胶带, 以防止设备被水冲走。用镊子将样品缓慢地干燥2喷枪 (图 2d)。</li>
</ol>

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作者没有什么可透露的。

这里描述的制造技术对先进的电子产品和可穿戴设备的进步大有帮助。这种方法的基本概念是使用薄硅膜和金属联网装置能够拉伸。虽然 si 是一种脆性和坚硬的材料, 可以很容易地破裂, 一个非常薄的 Si 层可以得到一个灵活性26,27。在金属联网电缆的情况下, 波形形状提供拉伸和灵活性28,29。特别是, 金属联网装置作为一个矩阵类型的整个设备操作的电极。在最后一步中实现的开放网格的矩阵形式以结构化的方式为设备提供了柔软性。结合薄 Si 层和蛇形电极的优点, 实现了应力隔离, 释放了器件的几何形状。此外, 围绕整个设备的 PI 层同时提供了抗反射效果, 并保护设备不受裂纹或缺陷的影响。采用转移印花方法, 可将所述加工装置放在柔性衬底上, 从而保证了器件变形的条件。通过这里提出的工艺步骤, 在器件特性和工艺成熟度方面有许多优点的 Si 装置可以作为可变形电子实现。
要获得具有低暗电流的 PTR 单元, 设备掺杂过程至关重要。掺杂深度比杂质浓度更重要, 因为深掺杂比浅掺杂能形成更多的损耗区域。在损耗区域, 光产生的电子和孔不重新组合, 这是减少深掺杂 PTR 中暗电流的主要因素。对于深层掺杂, 离子注入法比扩散法更合适。采用与本协议步骤1对应的离子注入法进行杂质掺杂。为了成功地执行掺杂过程, 考虑使用商用技术计算机辅助设计 (TCAD) 模拟来估计掺杂深度和浓度。
金属化步骤 (步骤3和 4) 是此处描述的制造技术中最关键的过程之一。在本协议中, au 被用作电子路径, 但 au 与 PI 层的附着力较差。因此, 需要一个 Cr (或 Ti) 层来促进非盟和 PI 的附着力。由于 PI 厚度, 这是1.2 µm 在这个实验中, 金属线沉积的电子束或热蒸发没有足够的步骤覆盖。在此协议中, 在这个步骤中使用溅射过程。我们建议使用溅射工艺的金属化。通过溶液蚀刻形成金属图案后, 用 DI 水清洗试样。需要小心的 N2气体吹干的水从样品, 因为强烈的气体打击可能剥离金属层。
形成一个通过孔 (步骤 5), 它穿透 PI 和 Si 层的蚀刻过程, 也是关键的这一制造技术。很难确定通过孔的模式是否很好地产生, 因为通过孔有一个小直径 (2 µm)。由于在蚀刻过程中颜色发生了变化, 我们建议在每个步骤中通过显微镜观察孔型的内部。然后, PI 层需要以蛇形网格的形式进行图案。这是设备获得灵活/可伸缩属性的重要步骤。
为了去除牺牲的2层 (步骤 6), 必须通过连续的显微观察了解氢氟酸 (HF) 对盒氧化物层的蚀刻程度。另外, 在清洗 HF 后保持干燥的 DI 水应该小心地执行, 因为吹2的气体可能从处理 Si 基体剥离设备。我们建议轻轻吹2气体。由于 HF 对人体非常有害, 实验应在装有防护装置、防护手套和气体排气系统的环境中进行。该协议的后续步骤, 转移打印过程 (步骤 6), 需要挑剔和熟练的技术。例如, 当使用水溶性胶带拆卸设备时, 通过高速移除胶带, 有利于保证收率。
最后, 本文提出了一种利用一系列半导体制造过程 (如沉积、蚀刻、光刻和转移印刷) 制造柔性 Si PTR 阵列的过程。为了解这一制造过程, 本文详细说明了具体的制作方法。此外, 本文还介绍了我们如何使用这里描述的方法来制造样品, 并测量了在 RoCs 特性中的制造样品的设备性能, 并没有照明的不同的。结果表明, Si PTR 阵列在变形状态下具有机械和电气稳定性。在这项研究中, 通过引入能产生三维变形的结构来克服硅材料的机械极限, 而硅是不固有的软的。正因为如此, 制作过程也可以用于其他应用领域的灵活/可伸缩电子和耐磨设备, 如医疗保健显示器。

生物启发成像系统可以提供许多优势相比, 传统的成像系统1,2,3,4,5。视网膜或半球 ommatidia 是生物视觉系统的一个坚固组分1,2,6。一个曲线图像传感器, 模仿动物眼睛的关键元素, 可以提供一个紧凑和简单的配置光学系统低畸变7。制造技术和材料的不同的进步, 例如, 使用本质软材料例如有机物或纳米材料8,9,10,11,12 、将可变形结构引入半导体, 包括硅 (Si) 和锗 (Ge)1、2、3、13、14、 15、16、17, 实现了曲线图像传感器。其中, Si 为基础的方法提供了固有的优势, 如丰富的材料, 成熟的技术, 稳定性和光/电优势。因此, 虽然 si 具有内在的刚性和脆性, si 基柔性电子已被广泛研究的各种应用, 如柔性光电子18,19,20包括曲线图像传感器1,2,3, 甚至可穿戴医疗保健设备21,22。
在最近的一项研究中, 我们分析和改进了薄硅光电探测器阵列23的电学性能。在该研究中, 曲线光电探测器阵列的最佳单单元单元是由光电二极管和阻挡二极管组成的三极管 (PTR) 类型。基结增益放大了产生的光电流, 因此它展示了一种通过薄膜结构改善电性能的途径。除了单细胞外, 薄膜结构还适用于抑制暗电流, 这在光电探测器中被认为是噪声。对于掺杂浓度, 大于 1015厘米-3的浓度足以达到一个特殊的性能, 其中二极管的特性可以保持与光强度超过 10-3瓦特/厘米2 23.而且, 与光电二极管相比, PTR 单胞具有低柱噪声和光学/电稳定性能。根据这些设计规则, 我们制作了一个灵活的光电探测器阵列, 由薄 Si PTRs 使用的硅绝缘体 (SOI) 晶片组成。在一般情况下, 柔性图像传感器的一个重要设计规则是中性机械平面概念, 它定义了一个任意小 r24的应变为零的结构的厚度位置。另一个关键点是一个蛇形几何的电极, 因为波形形状提供完全可逆的拉伸电极。由于这两个重要的设计概念, 光电探测器阵列可以灵活和可伸缩。它促进光电探测器阵列的3D 变形成半球状或像动物眼视网膜2的弯曲形状。
在这项工作中, 我们详细介绍了用半导体制造工艺 (如掺杂、蚀刻、沉积) 和转移印花制作弯曲 PTR 阵列的过程。此外, 我们的特点是一个单一的 PTR, 在一 V 曲线。除了制备方法和单个细胞分析外, 还分析了在形变状态下 PTR 阵列的电学特性。

<table><tbody><tr><td>MBJ3</td><td>karl suss</td><td>MJB3 UV400 MASK ALIGNER</td><td>Mask aligner</td></tr><tr><td>80 plus RIE</td><td>Oxford instruments</td><td>Plasmalab 80 Plus for RIE</td><td>ICP-RIE</td></tr><tr><td>80 plus PECVD</td><td>Oxford instruments</td><td>Plasmalab 80 Plus forPECVD,</td><td>PECVD</td></tr><tr><td>SF-100ND</td><td>Rhabdos Co., Ltd.</td><td>SF-100ND</td><td>Spin coater</td></tr><tr><td>Polyimide</td><td>Sigma-Aldrich</td><td>575771</td><td>Poly(pyromellitic dianhydride-co-4,4&amp;prime;-oxydianiline), amic acid solution</td></tr><tr><td>SOI (silicon on insulator) wafer, 8inch</td><td>Soitec</td><td>SOI (silicon on insulator) wafer, 8inch</td><td>8inch SOI Wafer (silicon Thickness: 1.25&amp;mu;m)</td></tr><tr><td>Acetone</td><td>Duksan Pure Chemicals Co., Ltd.</td><td>3051</td><td>Acetone</td></tr><tr><td>Isopropyl Alcohol (IPA)</td><td>Duksan Pure Chemicals Co., Ltd.</td><td>4614</td><td>Isopropyl Alcohol (IPA)</td></tr><tr><td>Buffered Oxide Etch 6:1</td><td>Avantor</td><td>1278</td><td>Buffered Oxide Etch 6:1</td></tr><tr><td>HSD150-03P</td><td>Misung Scientific Co., Ltd</td><td>HSD150-03P</td><td>Hot plate</td></tr><tr><td>AZ5214</td><td>Microchemical</td><td>AZ5214</td><td>Photoresist</td></tr><tr><td>MIF300</td><td>Microchemical</td><td>MIF300</td><td>Developer</td></tr><tr><td>SYLGARD184</td><td>Dow Corning</td><td>SYLGARD184</td><td>Polydimethylsiloxane elastomer</td></tr><tr><td>Hydrofluoric Acid&amp;nbsp;</td><td>Duksan Pure Chemicals Co., Ltd.</td><td>2919</td><td>Hydrofluoric Acid&amp;nbsp;</td></tr><tr><td>CR-7</td><td>KMG Chemicals, Inc</td><td>210023</td><td>Chrome mask etchant</td></tr><tr><td>MFCD07370792</td><td>Sigma-Aldrich</td><td>651842</td><td>Gold etchant</td></tr></tbody></table>

fabrication of flexible image sensor based on lateral nipin phototransistors

柔性探测器已被强烈地研究为使用曲线图像传感器, 这是一个关键组成部分的生物启发成像系统, 但几个挑战点仍然存在, 如低吸收效率由于薄的活性层和低灵活性。我们提出了一个先进的方法来制造一个灵活的三极管阵列与改进的电气性能。由于深杂质掺杂, 突出的电气性能由低暗电流驱动。可伸缩和灵活的金属联网装置同时提供高变形状态的电气和机械稳定性。该协议明确描述了三极管使用薄硅膜的制作过程。通过测量变形状态下已完成器件的三极管特性, 证明了该方法提高了阵列的机械和电气稳定性。我们预计, 这种灵活的三极管的方法可以广泛应用于下一代成像系统/光电子, 而且还可穿戴的设备, 如触觉/压力/温度传感器和健康监测器。

图 3a和3b显示了 NIPIN PTR 的设计和制造结构, 考虑到以前的研究2,23。图 3a中的插图展示了 PTR 的基本的 I V 特征。PTR 的详细结构参数如图 3b所示。利用 NNFC 离子注入技术, 对 SOI 晶片上的 Si 层进行掺杂处理。掺杂深度为1.25 µm, 等于 Si 层厚度, n+和 p+的掺杂浓度为 1019厘米-3。顶 Si 层上的掺杂分布具有手指型掺杂。在 n+区域和 p+区域之间的侧损耗区域, 这是由手指型掺杂产生的, 是有用的, 以减少损失的照片产生的载波25。此外, 手指型掺杂拓宽了产生光生成载体的活性区域, 从而提高了细胞效率。图 3c给出了掺杂 Si PTR 岛的光学图像。单 PTR 的 I V 特征如图 3d所示。
图 4a显示了在传输打印步骤之前制作的 PTR 阵列。放大的图像会详细显示单个 PTR 单元格。PI 封装的蛇形电极提供拉伸的设备, 并保护电极和 Si 电池的裂纹或失败。除了机械稳定性外, PI 层通过减少硅层与空气之间的折射率的差异, 发挥增透膜涂层的作用。图 4b显示了被转移的设备上的光学图像到一涂覆膜聚酯薄膜上。通过使用转移印花方法, 已完成的装置可以放置在柔性基板上 (如薄聚酯薄膜)。图 4c展示了测量设置的示意图和曲率半径 (RoC) 的定义。为了测量弯曲状态下的电气性能, 我们制作了定制的手动舞台, 通过从侧面移动来弯曲试样。图 4d显示了 PTR 阵列在不同 RoCs (即无穷大、10厘米、8厘米、6厘米、4厘米、2厘米) 中的 I V 特征。这一结果表明, 无论 RoCs, PTR 的电学特性都是恒定的。这个实验中使用的光源是由卤素灯引起的白光。图 4e显示了与不同 RoCs 的电压函数的光电流与暗电流的比值。动态范围, 确定光电探测器的灵敏度, 保持在600或以上, 高于偏压 2 v。这一结果表明, 薄硅膜可以达到一个显著的动态范围, 由于低暗电流, 如图 4e的插图所示。图 4f显示了每个中华民国的弯曲 PTR 阵列的图像。
<img alt="Figure 1" class="xfigimg" src="/files/ftp_upload/57502/57502fig1.jpg"> 图 1: 曲线三极管阵列的制作过程示意图.面板 (a)-(o) 显示了在掺杂 soi 基板上制造三极管器件以创建通过孔以去除 SOI 基板的牺牲层的顺序过程。<a href="/files/ftp_upload/57502/57502fig1large.jpg" target="_blank">请单击此处查看此图的较大版本.</a>
<img alt="Figure 2" class="xfigimg" src="/files/ftp_upload/57502/57502fig2.jpg"> 图 2: 从 SOI 晶片到柔性衬底的三极管阵列的转移印花示意图.(a) 这个小组展示了如何形成一个开放的网格结构, 并删除牺牲层。(b) 本小组展示如何将该装置与水溶性胶带分离。(c) 本小组介绍如何将该设备转移到粘弹性的柔性基板 (例如, 聚硅烷)。(d) 本小组展示了如何通过将水放在水中来去除水溶性胶带。<a href="/files/ftp_upload/57502/57502fig2large.jpg" target="_blank">请单击此处查看此图的较大版本.</a>
<img alt="Figure 3" class="xfigimg" src="/files/ftp_upload/57502/57502fig3.jpg"> 图 3: 三极管 (PTR) 单单元单元格的示意图和 I V 特征的仿真结果.前两个面板显示 (a) ptr 的倾斜视图和 (b) ptr 的顶部视图。掺杂浓度为 p+和 n+区域的 1019厘米-3 。详细的几何值显示在图 3b中。图 3a中的嵌入显示了 PTR 的基本的 I V 特征。(c) 此面板显示了掺杂 Si PTRs 的光学显微图像。黄颜色表示 Si PTRs。绿色衬底是一个2盒层。(d) 本小组显示了在明亮和黑暗状态下单一 PTR 的特性。该嵌入显示了单个单元格的暗电流。<a href="/files/ftp_upload/57502/57502fig3large.jpg" target="_blank">请单击此处查看此图的较大版本.</a>
<img alt="Figure 4" class="xfigimg" src="/files/ftp_upload/57502/57502fig4.jpg"> 图 4: 测量三极管阵列曲线状态中 V 特征的方法和结果示意图.(a) 本小组展示了制作装置的摄影。放大的图像会详细显示单个 PTR 单元格。(b) 本小组展示了一台被涂覆的 PET 薄膜上的转移装置的摄影。(c) 本小组是测量装置的简化示意图。曲率半径 (RoC) 被定义为圆的圆心的半径, 如图中所示。(d) 此面板显示了在不同 RoCs 照明下的 PTR 阵列的 I. V 特征。(e) 此面板是光电流与暗电流比值的图。该嵌入演示了一个非常低的暗电流水平, 从而导致一个高动态范围。(f) 此面板显示每个中华民国的弯曲 PTR 阵列的光学图像。<a href="/files/ftp_upload/57502/57502fig4large.jpg" target="_blank">请单击此处查看此图的较大版本.</a>

Watch this Scientific Journal Video about Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors at JoVE.com

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

基于侧向 NIPIN Phototransistors 的柔性图像传感器的研制

本文提出了一种用于曲面图像传感器的可变形侧向 NIPIN 三极管阵列的详细方法。三极管阵列具有开放的网状形式, 由薄硅岛和可伸缩金属联网装置组成, 提供了灵活性和拉伸。参数分析仪的特点是制造三极管的电学性能。

Flexible photodetectors have been intensely studied for the use of curved image sensors, which are a crucial component in bio-inspired imaging systems, ...

fabrication-flexible-image-sensor-based-on-lateral-nipin

Nanyang Technological University

Research

JoVE Journal

Engineering

7.7K 次观看.  Gwangju Institute of Science and Technology. 本文提出了一种用于曲面图像传感器的可变形侧向 NIPIN 三极管阵列的详细方法。三极管阵列具有开放的网状形式, 由薄硅岛和可伸缩金属联网装置组成, 提供了灵活性和拉伸。参数分析仪的特点是制造三极管的电学性能。

视频: Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization

Polymer-based materials hold promise as low-cost, flexible efficient photovoltaic devices. Most laboratory efforts to achieve high performance devices have used devices prepared by spin coating, a process that is not amenable to large-scale fabrication. This mismatch in device fabrication makes it difficult to translate quantitative results obtained in the laboratory to the commercial level, making optimization difficult. Using a mini-slot die coater, this mismatch can be resolved by translating the commercial process to the laboratory and characterizing the structure formation in the active layer of the device in real time and in situ as films are coated onto a substrate. The evolution of the morphology was characterized under different conditions, allowing us to propose a mechanism by which the structures form and grow. This mini-slot die coater offers a simple, convenient, material efficient route by which the morphology in the active layer can be optimized under industrially relevant conditions. The goal of this protocol is to show experimental details of how a solar cell device is fabricated using a mini-slot die coater and technical details of running in situ structure characterization using the mini-slot die coater.

Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization

Here, we present a protocol to fabricate organic thin film solar cells using a mini-slot die coater and related in-line structure characterizations using synchrotron scattering techniques.

散装异质结太阳能电池的印刷和制作<em&gt;原位</em&gt;形态特征

Polymer-based materials hold promise as low-cost, flexible efficient photovoltaic devices. Most laboratory efforts to achieve high performance devices ...

科研

工程学

Fabrication of Fully Solution Processed Inorganic Nanocrystal Photovoltaic Devices

We demonstrate a method for the preparation of fully solution processed inorganic solar cells from a spin and spray coating deposition of nanocrystal inks. For the photoactive absorber layer, colloidal CdTe and CdSe nanocrystals (3-5 nm) are synthesized using an inert hot injection technique and cleaned with precipitations to remove excess starting reagents. Similarly, gold nanocrystals (3-5 nm) are synthesized under ambient conditions and dissolved in organic solvents. In addition, precursor solutions for transparent conductive indium tin oxide (ITO) films are prepared from solutions of indium and tin salts paired with a reactive oxidizer. Layer-by-layer, these solutions are deposited onto a glass substrate following annealing (200-400 &#176;C) to build the nanocrystal solar cell (glass/ITO/CdSe/CdTe/Au). Pre-annealing ligand exchange is required for CdSe and CdTe nanocrystals where films are dipped in NH4Cl:methanol to replace long-chain native ligands with small inorganic Cl- anions. NH4Cl(s) was found to act as a catalyst for the sintering reaction (as a non-toxic alternative to the conventional CdCl2(s) treatment) leading to grain growth (136&#177;39 nm) during heating. The thickness and roughness of the prepared films are characterized with SEM and optical profilometry. FTIR is used to determine the degree of ligand exchange prior to sintering, and XRD is used to verify the crystallinity and phase of each material. UV/Vis spectra show high visible light transmission through the ITO layer and a red shift in the absorbance of the cadmium chalcogenide nanocrystals after thermal annealing. Current-voltage curves of completed devices are measured under simulated one sun illumination. Small differences in deposition techniques and reagents employed during ligand exchange have been shown to have a profound influence on the device properties. Here, we examine the effects of chemical (sintering and ligand exchange agents) and physical treatments (solution concentration, spray-pressure, annealing time and annealing temperature) on photovoltaic device performance.

This protocol describes the synthesis and solution deposition of inorganic nanocrystals layer by layer to produce thin film electronics on non-conductive surfaces. Solvent-stabilized inks can produce complete photovoltaic devices on glass substrates via spin and spray coating following post-deposition ligand exchange and sintering.

全面解决方案处理的无机纳米晶体光伏器件的制造

We demonstrate a method for the preparation of fully solution processed inorganic solar cells from a spin and spray coating deposition of nanocrystal ...

Fabrication and Testing of Photonic Thermometers

In recent years, a push for developing novel silicon photonic devices for telecommunications has generated a vast knowledge base that is now being leveraged for developing sophisticated photonic sensors. Silicon photonic sensors seek to exploit the strong confinement of light in nano-waveguides to transduce changes in physical state to changes in resonance frequency. In the case of thermometry, the thermo-optic coefficient, i.e., changes in refractive index due to temperature, causes the resonant frequency of the photonic device such as a Bragg grating to drift with temperature. We are developing a suite of photonic devices that leverage recent advances in telecom compatible light sources to fabricate cost-effective photonic temperature sensors, which can be deployed in a wide variety of settings ranging from controlled laboratory conditions, to the noisy environment of a factory floor or a residence. In this manuscript, we detail our protocol for the fabrication and testing of photonic thermometers.

We describe the process of fabrication and testing of photonic thermometers.

光子温度计的制作与测试

In recent years, a push for developing novel silicon photonic devices for telecommunications has generated a vast knowledge base that is now being ...

化学

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Two-dimensional (2D) materials have attracted huge attention due to their unique properties and potential applications. Since wafer scale synthesis of 2D materials is still in nascent stages, scientists cannot fully rely on traditional semiconductor techniques for related research. Delicate processes from locating the materials to electrode definition need to be well controlled. In this article, a universal fabrication protocol required in manufacturing nanoscale electronics, such as 2D quasi-heterojunction bipolar transistors (Q-HBT), and 2D back-gated transistors are demonstrated. This protocol includes the determination of material position, electron beam lithography (EBL), metal electrode definition, et al. A step by step narrative of the fabrication procedures for these devices are also presented. Furthermore, results show that each of the fabricated devices has achieved high performance with high repeatability. This work reveals a comprehensive description of process flow for preparing 2D nano-electronics, enables the research groups to access this information, and pave the way toward future electronics.

The article aims to introduce a standard and reliable fabrication procedure for the development of future low dimensional nanoelectronics.

制造二维电子学的标准可靠方法

Two-dimensional (2D) materials have attracted huge attention due to their unique properties and potential applications. Since wafer scale synthesis of 2D ...

Polymeric Microneedle Array Fabrication by Photolithography

This manuscript describes the fabrication of polymeric microneedle (MN) arrays by photolithography. It involves a simple mold-free process by using a photomask consisting of embedded micro-lenses. Embedded micro-lenses were found to influence MN geometry (sharpness). Robust MN arrays with tip diameters ranging between 41.5 &#181;m &#177; 8.4 &#181;m and 71.6 &#181;m &#177; 13.7 &#181;m, with two different lengths (1,336 &#181;m &#177; 193 &#181;m and 957 &#181;m &#177; 171 &#181;m) were fabricated. These MN arrays may provide potential applications in delivery of low molecular and macromolecular therapeutic agents through skin.

Here, we present a protocol describing a mold-free fabrication process of the polymeric microneedles by photolithography.

聚合物微针阵列制造用光刻

This manuscript describes the fabrication of polymeric microneedle (MN) arrays by photolithography. It involves a simple mold-free process by using a ...

生物工程

Hybrid Printing for the Fabrication of Smart Sensors

A method to combine additively manufactured substrates or foils and multilayer inkjet printing for the fabrication of sensor devices is presented. First, three substrates (acrylate, ceramics, and copper) are prepared. To determine the resulting material properties of these substrates, profilometer, contact angle, scanning electron microscope (SEM), and focused ion beam (FIB) measurements are done. The achievable printing resolution and suitable drop volume for each substrate are, then, found through the drop size tests. Then, layers of insulating and conductive ink are inkjet printed alternately to fabricate the target sensor structures. After each printing step, the respective layers are individually treated by photonic curing. The parameters used for the curing of each layer are adapted depending on the printed ink, as well as on the surface properties of the respective substrate. To confirm the resulting conductivity and to determine the quality of the printed surface, four-point probe and profilometer measurements are done. Finally, a measurement set-up and results achieved by such an all-printed sensor system are shown to demonstrate the achievable quality.

Here we present a protocol for the fabrication of inkjet-printed multilayer sensor structures on additively manufactured substrates and foil.

用于智能传感器制造的混合打印

A method to combine additively manufactured substrates or foils and multilayer inkjet printing for the fabrication of sensor devices is presented. First, ...

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Optical phased arrays (OPAs) can produce low-divergence laser beams and can be used to control the emission angle electronically without the need for moving mechanical parts. This technology is particularly useful for beam steering applications. Here, we focus on OPAs integrated into SiN photonic circuits for a wavelength in the near infrared. A characterization method of such circuits is presented, which allows the output beam of integrated OPAs to be shaped and steered. Furthermore, using a wafer-scale characterization setup, several devices can easily be tested across multiple dies on a wafer. In this way, fabrication variations can be studied, and high-performance devices identified. Typical images of OPA beams are shown, including beams emitted from OPAs with and without a uniform waveguide length, and with varying numbers of channels. In addition, the evolution of output beams during the phase optimization process and beam steering in two dimensions is presented. Finally, a study of the variation in the beam divergence of identical devices is performed with respect to their position on the wafer.

Here, we describe the operation of a SiN integrated photonic circuit containing optical phased arrays. The circuits are used to emit low divergence laser beams in the near infrared and steer them in two dimensions.

晶圆级试验站上SiN集成光学相控阵列的特性

Optical phased arrays (OPAs) can produce low-divergence laser beams and can be used to control the emission angle electronically without the need for ...

High-Contrast and Fast Photorheological Switching of a Twist-Bend Nematic Liquid Crystal

Smart viscoelastic materials that respond to specific stimuli are one of the most attractive classes of materials important to future technologies, such as on-demand switchable adhesion technologies, actuators, molecular clutches, and nano-/microscopic mass transporters. Recently it was found that through a special solid-liquid transition, rheological properties can exhibit significant changes, thus providing suitable smart viscoelastic materials. However, designing materials with such a property is complex, and forward and backward switching times are usually long. Therefore, it is important to explore new working mechanisms to realize solid-liquid transitions, shorten the switching time, and enhance the contrast of rheological properties during switching. Here, a light-induced crystal-liquid phase transition is observed, which is characterized by means of polarizing light microscopy (POM), photorheometry, photo-differential scanning calorimetry (photo-DSC), and X-ray diffraction (XRD). The light-induced crystal-liquid phase transition presents key features such as (1) fast switching of crystal-liquid phases for both forward and backward reactions and (2) a high contrast ratio of viscoelasticity. In the characterization, POM is advantageous in offering information on the spatial distribution of LC molecule orientations, determining the type of liquid crystalline phases appearing in the material, and studying the orientation of LCs. Photorheometry allows measurement of a material&#8217;s rheological properties under light stimuli and can reveal the photorheological switching properties of materials. Photo-DSC is a technique to investigate thermodynamic information of materials in darkness and under light irradiation. Lastly, XRD allows studying of microscopic structures of materials. The goal of this article is to clearly present how to prepare and measure the discussed properties of a photorheological material.

This protocol demonstrates the preparation of a photorheological material that exhibits a solid phase, various liquid crystalline phases, and an isotropic liquid phase by increasing temperature. Presented here are methods for measuring the structure-viscoelasticity relationship of the material.

扭曲弯曲的液晶的高对比度和快速光圈开关

Smart viscoelastic materials that respond to specific stimuli are one of the most attractive classes of materials important to future technologies, such ...

Fabrication and Testing of Miniature Automatic Photophoretic Trapping Rigs

This paper presents an automated, rapid-fab-compatible, photophoretic trap test rig to enable the democratization and crowdsourcing of volumetric display research. The rig can be constructed within 2 h using a laser cutter, 3-dimensional (3D) printer, and common hand tools. In its current form, the rig can be used to test the following critical parameters: particle type, trap type, numerical aperture, and airflow at a rate of approximately 250 samples per hour. With minor modification, the rig can be made to test an even larger set of parameters, such as laser power and laser wavelength, depending on the user's needs. The rig can use machine vision for automated data capture and analysis. The operation and construction of the test rig are described with concise, easy-to-follow steps. Results from a four-unit test rig 'farm' covering the power and particle type parameters are reported. This platform will broaden the scope and composition of optical trap display parameters and researchers through accessibility and democratization.

This work describes and characterizes the fabrication of miniature automatic photophoretic trapping rigs.

微型自动光电陷印钻机的制造和测试

This paper presents an automated, rapid-fab-compatible, photophoretic trap test rig to enable the democratization and crowdsourcing of volumetric display ...

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles

Today, wearable electronics devices combine a large variety of functional, stretchable, and flexible technologies. However, in many cases, these devices cannot be worn under everyday conditions. Therefore, textiles are commonly considered the best substrate to accommodate electronic devices in wearable use. In this paper, we describe how to selectively pattern organic electroactive materials on textiles from a solution in an easy and scalable manner. This versatile deposition technique enables the fabrication of wearable organic electronic devices on clothes.

In this paper, we present a protocol to selectively deposit organic materials on textiles, which allows for the direct integration of organic electronic devices with wearables. The fabricated devices can be fully integrated in textiles, respecting their mechanical appearance and enabling sensing capabilities.

关于纺织品有机电子设备的简单和可扩展的制作方法

Today, wearable electronics devices combine a large variety of functional, stretchable, and flexible technologies. However, in many cases, these devices ...