JoVE Journal

Engineering

This content is Open Access.

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope

We use an aberration-corrected scanning transmission electron microscope to define single-digit nanometer patterns in two widely-used electron-beam resists: poly (methyl methacrylate) and hydrogen silsesquioxane. Resist patterns can be replicated in target materials of choice with single-digit nanometer fidelity using liftoff, plasma etching, and resist infiltration by organometallics.

Chapters in this video

0:04

Title

1:03

Sample Preparation for Resist Coating

2:27

Load Sample in STEM, Map Window Coordinates, and Perform High-Resolution Focusing

4:54

Expose Patterns Using an Aberration-Corrected STEM Equipped with a Pattern Generator System

6:44

Resist Development and Critical Point Drying

8:09

Results: Nanometer-Scale Lithographic Patterns in HSQ and PMMA (Positive and Negative Tone)

9:14

Conclusion

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