Este material é baseado no trabalho apoiado por um fundo de arranque, na Universidade de Minnesota, Twin Cities. Partes deste trabalho foram realizadas na instalação de caracterização da Universidade de Minnesota, um membro da Materials Research Facilities Rede NSF-financiado (www.mrfn.org) através do programa MRSEC. Uma porção deste trabalho também foi realizado na Minnesota Nano Center, que recebe o apoio parcial do NSF através do programa NNCI.

Cuidado: Muitos dos produtos químicos utilizados nestas sínteses são tóxicos, altamente inflamável e pode causar irritação e danos em órgãos grave quando tocado ou inalado. Por favor, usar equipamento de proteção pessoal adequado (PPE) ao manusear. 1. Preparação de a primeira camada de ouro (Au) Nanopillar matrizes (Figura 2A-C e Figura 2e-g) <ol><li> Preparação de cobre (Cu) camadas de sementes para Au galvanoplastia (Figura 2a, b e Figura 2E, F) <ol><li> Usar uma bolacha 4 &quot;alta resistividade de silício (Si). (Resistividade: 560-840 Ω · cm) como o substrato A bolacha de Si do tipo N é dopado e polido de um lado (Figura 2A, e). </li><li> Cortar a bolacha de Si 2 cm x 2,5 cm peças para uso posterior. </li><li> Depositar uma camada de 5 nm de crómio (Cr) sobre a amostra de Si utilizando um processo de evaporação de feixe de electrões (E-beam) como uma camada de adesão entre o Si e Cu. </li><li> Depositar uma camada de 10 nm de Cu no topo da camada de Cr existente usando umProcesso de evaporação de feixe de electrões como a camada de semente para Au galvanoplastia (Figura 2b, F). </li></ol></li><li> Galvanoplastia a matriz nanopillar Au (Figura 2c, g) <ol><li> Padronização da matriz nanopillar <ol><li> Girar revestimento fotorresiste sobre a amostra preparada no ponto 1.1 a 2.000 rpm durante 60 s. </li><li> Cozer a amostra numa placa quente a 115 ° C durante 60 s. </li><li> Expor o fotorresistente sob luz ultravioleta (UV) -Light (poder de ~ 15 mW / cm 2) com uma fotomáscara Cr que contém milhares de padrões nanopillar durante 22 s. </li><li> Desenvolver com um desenvolvedor por 90 s com agitação. </li><li> Lavar a amostra com deionizada (DI) de água e seque a amostra com uma pistola de ar. </li></ol></li><li> Galvanoplastia a matriz nanopillar Au <ol><li> Retirar a parte superior do foto-resistente sobre a amostra com acetona para expor a camada de semente de Cu para ligação do eléctrodo. </li><li> Ligue o sample (camada de sementes Cu) ao terminal negativo de um metro de origem usando uma pinça e um fio. Neste caso, a amostra é o ânodo durante o processo de galvanização. </li><li> Conectar um pedaço de platina (Pt) Si (mesmo tamanho da amostra) revestido com o terminal positivo da fonte de metros. O PT é o cátodo, durante o processo de galvanização. </li><li> Submerge tanto o cátodo de Pt e Cu ânodo na solução de galvanoplastia Au. Manter os dois eléctrodos de frente um para o outro com uma distância de ~ 1 cm. </li><li> Ligue o medidor de origem e fornecer uma tensão constante de 1,12 V. Electroplate Au na amostra para 8 min (taxa de deposição: ~ 100 nm / min). </li><li> Lavar a amostra com água desionizada, seguido por acetona para remover o material fotosensitivo. </li><li> Lavar a amostra com água DI novamente e seque com uma pistola de ar. </li><li> Inspecione a matriz galvanizado nanopillar Au sob um microscópio. </li><li> Medir a espessura da UA nanopillars com um perfilómetro (A espessura doAu nanopillars é de ~ 800 nm). NOTA: Constante atual set-up também pode ser usado para galvanizar Au nanopillars. Em ambos tensão constante e aparelhagem de corrente constante, a tensão de corrente ideal e usado para Au galvanização pode ser conseguida por tentativa e erro. </li></ol></li></ol></li></ol> 2. Criação de Nano-lacunas entre Au Nanopillars (Figura 2d, h) <ol><li> A remoção de camadas de Cr e Cu <ol><li> Submergir a amostra em Cu etchant até a cor Cu desaparece. </li><li> Lavar a amostra com água DI e secar com uma pistola de ar. </li><li> Inspecione os nanopillars Au sob um microscópio. </li><li> Submergir a amostra em Cr máscara etchant por 10 s. </li><li> Lavar a amostra com água DI e secar com uma pistola de ar. </li><li> Inspecione os nanopillars Au sob um microscópio. </li></ol></li><li> Fabricação de nano-escala óxido de alumínio (Al 2 O 3) lacunas <ol><li> Aqueça o cham sistema ALDber a 200 ° C. </li><li> Colocar a amostra no centro da câmara. </li><li> Pump down a câmara a um vácuo e definir o número de ciclos a 100 (taxa de deposição: ~ 1 A / ciclo). </li><li> Sequencialmente e, alternativamente, o pulso de gás trimetilalumínio (TMA), com um período de tempo de 0,015 s e (H2O) de vapor de água com um período de tempo de 0,015 s para dentro da câmara de depósito uniforme de Al 2 O 3 camadas sobre a amostra. O intervalo de tempo entre cada pulso é de 5 s. A pressão da câmara durante o impulso TMA é de 10 Torr e a pressão durante 2 pulso O vapor H é de 2 Torr. </li><li> Purgar e aspirar a câmara entre cada ciclo da deposição. Depósito Al 2 O 3 de 100 ciclos e tirar a amostra da câmara. </li><li> Medir a espessura do ALD Al 2 O 3, utilizando um elipsómetro. </li></ol></li></ol> 3. Preparação da segunda camada de uma película fina Au (Figura 2i-l e A Figura 2 M-P) <ol><li> Preparação de camadas de sementes de Cu para Au galvanoplastia (Figura 2-I, m) <ol><li> Colocar a amostra no centro de um suporte de amostras evaporador E-feixe. </li><li> Desligar a rotação da amostra no evaporador de feixe de electrões. </li><li> Depositar uma camada de Cr de 5 nm na amostra para actuar como uma camada de adesão entre Al 2 O 3 e Cu. Use um processo de evaporação E-feixe, sem rotação da amostra. </li><li> Depósito de 10 nm de Cu no topo da camada de Cr existente usando um processo de evaporação de feixe de electrões sem rotação da amostra como a camada de semente para Au galvanoplastia. </li></ol></li><li> Galvanoplastia a película fina Au (Figura 2j, n) <ol><li> Ligar a amostra (camada de sementes Cu) ao terminal negativo da fonte de metros usando uma pinça e um fio. Neste caso, a amostra é o ânodo durante o processo de galvanização. </li><li> Ligue o cátodo de Pt ao terminal positivo da fonte de metros. </li><li> Submerge tanto o cátodo de Pt e Cu anode na solução de galvanoplastia Au. Manter os dois eléctrodos de frente um para o outro com uma distância de ~ 1 cm. </li><li> Ligue o medidor de fonte e criar tensão constante de 1,35 V e galvaniza Au com a amostra para 16 min. </li><li> Lavar a amostra com água DI e secar com uma pistola de ar. </li><li> Inspecione o Au galvanizado ea matriz previamente galvanizado nanopillar Au sob um microscópio. </li><li> Medir a espessura da UA nanopillars com um perfilômetro (Espessura da UA nanopillars é de ~ 400 nm). NOTA: Semelhante ao galvanoplastia Au no ponto 1.2.2, corrente constante set-up também pode ser usado para galvanizar Au película fina. Em ambos tensão constante e aparelhagem de corrente constante, a tensão de corrente ideal e usado para Au galvanização pode ser conseguida por tentativa e erro. </li></ol></li><li> Remoção de Cr e Cu camadas (Figura 2k, o) <ol><li> Submergir a amostra em Cu etchant por 10 s. </li><li> Lavar a amostra com DI de águad blow-seca, com uma pistola de ar. </li><li> Inspecione os nanopillars Au sob um microscópio. </li><li> Submergir a amostra em Cr máscara etchant por 10 s. </li><li> Lavar a amostra com água DI e secar com uma pistola de ar. </li><li> Inspecione os nanopillars Au sob um microscópio. NOTA: Como alternativa, submergir a amostra na solução de galvanoplastia Au novamente para depositar uma camada extra de Au no topo da segunda camada de Au electrodepositado após a remoção de Cr e Cu (passo 3.3). Esta camada extra Au aumenta a espessura total da segunda camada de Au e garante um bom contacto entre a camada de Au e a camada de Al 2 O 3 (Figura 2i, p). </li></ol></li></ol> 4. Definição do C-forma SRR (Figura 2T-s e Figura 2U-w) <ol><li> Padronização do SRR C-forma (Figura 2T, u) <ol><li> Girar um revestimento foto-resistente sobre a amostra a 2000 rpm durante 60 s. </li><li> Asse a amostra na placa quente de 115 ° C durante 60 s. </li><li&gt; Expor fotorresistente sob luz UV (fonte de ~ 15 mW / cm 2) com uma fotomáscara Cr durante 22 s. </li><li> Desenvolver com um desenvolvedor por 90 s com agitação. </li><li> Lavar a amostra com água DI e seque a amostra com uma pistola de ar. </li></ol></li><li> Definição em forma de C usando moinhos de iões (Figura 2R, V e Figura 2s, w) <ol><li> Fixe a amostra num suporte de amostras moinho de iões utilizando fita condutora dupla face Cu. </li><li> Esfriar a câmara de moagem ion a 6 ° C. </li><li> Ion moinho a amostra com um feixe de tensão de 300 V e uma corrente de feixe de 125 mA durante ~ 30 min. </li><li> Retire a amostra e inspecionar os nanopillars Au fora da C-forma. </li><li> Repita o passo 4.2.3 e 4.2.4, se Au ainda é visível fora do C-forma. </li><li> Sonicar a amostra em acetona, para remover o material fotosensitivo. </li><li> Lavar a amostra com água DI e secar com uma pistola de ar. </li><li> Inspeccionar a amostra sob um microscópio. </li><li> Repita o passo 4.2.6 e 4.2.7 Se fotorresistência não é totalmente removido. NOTA: Como alternativa, aplique oxigênio resistem amolecimento passos para o fotorresiste antes de remover o fotorresiste. No entanto, num banho de ultra-sons é o método mais eficaz para remover o material fotosensitivo, se aplicável. </li></ol></li></ol> 5. Remoção de Al 2 O 3 para a Air Nano-lacunas (Figura 2t, x) <ol><li> Submergir a amostra em solução a 5% de fluoreto de hidrogénio (HF) durante 5 min para remover Al 2 O 3. </li><li> Lavar a amostra com água DI e secar com uma pistola de ar. </li></ol>

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Esta técnica de fabricação tem vantagens significativas para a criação de estruturas em escala nanométrica em relação aos métodos existentes, tais como a litografia de feixe de electrões e auto-montagem. Em primeiro lugar, as estruturas em escala nano pode ser realizado por uma grande área (uma bolacha inteira) usando um photomask que apresenta matrizes nanopillar, que não é prático com um processo de litografia de feixe de electrões. Em segundo lugar, o processo de fabrico utiliza um processo de fabrica?...

Terahertz (THz) metamateriais (MMS) foram desenvolvidos para sensores biomédicos e dispositivos de 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 freqüência ágil. A fim de melhorar a sensibilidade e a frequência selectividade dos sensores MM THz, um baseado em nanopillar anel fendido ressonador (SRR) foi concebido usando corrente de deslocamento gerado dentro de ouro (Au) matrizes nanopillar para excitar ressonâncias THz com factores de ultra-alta qualidade ( Q-fatores) (~ 450) (Figura 1) 12. Mesmo que SRR baseada nanopillar mostram altos Q-fatores e habilidades de detecção promissores, fabricação de tais nanostructures com proporções elevadas (mais de 40) e lacunas escala nano (sub-10 nm) sobre uma grande área continua sendo um desafio 13. A técnica mais comumente usado para o fabrico de estruturas em escala nanométrica é por feixe de elétrons de litografia (EBL) 14, 15, 16, 17. No entanto, a resolução de EBL é ainda limitada, devido ao tamanho do ponto do feixe, de dispersão de electrões, as propriedades da resistência, e o processo de desenvolvimento 18, 19. Além disso, não é prático para fabricar nanoestruturas usando EBL sobre uma grande área devido a um tempo de processo lento e grandes custos de processo 20. Outra estratégia para alcançar nanoestruturas é a utilização de uma técnica de auto-montagem 21, 22. Por nanocubes metálicos auto-montagem (NCS) em uma solução e utilnalizar a interação eletrostática e a associação de ligantes de polímero entre CNs, uma matriz NC unidimensional bem organizado, com lacunas escala nano pode ser alcançado 23. O tamanho nano-lacuna depende dos ligandos de polímero entre as CNs e pode ser controlado através da aplicação de diferentes materiais de polímeros com diferentes pesos moleculares 24, 25, 26. Auto-montagem é uma técnica poderosa para alcançar nanoestruturas escaláveis e de custo eficiente 23. No entanto, o processo de fabricação é mais complicado comparado com os processos micro e nano fabricação convencionais, eo controle de tamanhos nano-gap não é suficientemente precisa para aplicações de dispositivos eletrônicos. A fim de fabricar com sucesso SRR baseada nanopillar, um novo método de fabrico, deverão ser inventada para atingir os seguintes objectivos: i) o processo de fabricação é fácil de aplicar e é compatível com a convençãoao micro e nano fabricação processos; ii) a fabricação de uma grande área é aplicável; iii) tamanhos nano-lacuna pode ser fácil e precisamente controlada com uma resolução de 0,1 nm e pode ser reduzida para 10 nm ou menos. Um novo método de fabricação é demonstrada usando a combinação de um processo de galvanoplastia e um processo de deposição de camada atómica (ALD) para fabricar SRR-base nanopillar. Desde galvanoplastia é um processo de auto-enchimento com baixo custo, que é fácil de fabricar estruturas sobre uma grande área. ALD é um processo de deposição de vapor químico (CVD) que pode ser precisamente controlada pelo ciclo de reacção durante o processo. A resolução de película fina ALD pode ser de 0.1 nm, e a película fina é uniformemente revestida com uma elevada qualidade, que é adequado para criar lacunas escala nano 27, 28. SRR matriz à base de Nanopillar com lacunas 10 nm ou menos pode ser fabricada com sucesso através de uma área de 6 mm x 6 mm. ambos sespectros de transmissão THz imulated e medidos mostram comportamentos ressonantes com ultra-alta Q-fatores e mudanças de frequência grandes, o que prova a viabilidade dos SRR baseada nanopillar mediadas pela corrente de deslocamento. O processo de fabricação detalhada está descrita abaixo na seção de protocolo eo protocolo de vídeo pode ajudar os profissionais a compreender o processo de fabricação e evitar erros comuns associados com a fabricação de SRR baseada nanopillar.

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			<td style="width:295px;">Fisher Chemical</td>
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			<td>Diluted to 5%</td>
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fabrication of nanopillar-based split ring resonators for displacement current mediated resonances in terahertz metamaterials

Terahertz (THz) anel de divisão ressonador (SRR) metamateriais (MMS) foi estudado para o gás, química e aplicações de detecção biomolecular porque o SRR não é afetado por características ambientais, como a temperatura ea pressão em torno do ressonador. A radiação electromagnética em frequências THz é biocompatível, que é uma condição crítica especialmente para a aplicação da detecção biomolecular. No entanto, o fator de qualidade (Q-Factor) e as respostas de base ressonador tradicional anel de divisão de película fina de frequência (SRR) MMs são muito baixos, o que limita as suas sensibilidades e selectividade como sensores. Neste trabalho, os novos MMs SRR baseada nanopillar, utilizando corrente de deslocamento, são projetados para aumentar o fator Q até 450, o que é cerca de 45 vezes maior que a do MMs tradicionais baseadas em thin-film. Além disso para o factor Q reforçada, o MMS baseada nanopillar induzir uma deslocamentos de frequência maiores (17 vezes em comparação com o deslocamento obtida pela tradiçãoal thin-film MMs base). Por causa das Q-fatores significativamente melhoradas e deslocamentos de frequência, bem como a propriedade da radiação biocompatível, o THz SRR baseada nanopillar são MMs ideais para o desenvolvimento de sensores biomoleculares com alta sensibilidade e seletividade sem induzir danos ou distorção de biomateriais. Um novo processo de fabricação tenha sido demonstrado para construir os SRR-base nanopillar para MMS THz corrente de deslocamento mediadas. Um (Au) galvanoplastia processo de duas etapas de ouro e de um processo de deposição de camada atómica (ALD) são usadas para criar aberturas sub-10 nm de escala entre o Au nanopillars. Uma vez que o processo é um processo de ALD revestimento isolante, um óxido de alumínio uniforme (Al 2 O 3) camada com espessura à escala nanométrica pode ser alcançado. Por galvanoplastia sequencialmente outra película fina Au para preencher os espaços entre Al 2 O 3 e Au, um repleto de perto Au-Al 2 O 3 -au estrutura com nano-escala Al 2 O 3 lacunas pode serfabricado. O tamanho dos nano-lacunas pode ser bem definida ao controlar com precisão os ciclos de deposição do processo ALD, que tem uma precisão de 0,1 nm.

<html> Esquemas de fabrico de mostrar cada etapa (Figura 2A-X). Imagens ópticas (Figura 2a-AC) e imagens de microscópio eletrônico de varredura (SEM) (Figura 2AD-AG) foram coletadas para os SRR baseada nanopillar em diferentes etapas de fabricação. As animações (Figura 2A-C) ilustram a primeira camada de Au nanopillars galvanizados e a segunda camada de Au filmes galvanizados, bem como os nano-lacunas criadas entre...

Watch this Scientific Journal Video about Fabrication of Nanopillar-Based Split Ring Resonators for Displacement Current Mediated Resonances in Terahertz Metamaterials at JoVE.com

Fabrication of Nanopillar-Based Split Ring Resonators for Displacement Current Mediated Resonances in Terahertz Metamaterials

Um protocolo para a concepção e fabricação de um novo ressonador anel de divisão com base em nanopillar (SRR) é apresentado.

Fabricação de ressonadores anel de divisão Nanopillar-base para o deslocamento atuais mediada Ressonâncias em Terahertz Metamaterials

Terahertz (THz) split ring resonator (SRR) metamaterials (MMs) has been studied for gas, chemical, and biomolecular sensing applications because the SRR ...

fabrication-nanopillar-based-split-ring-resonators-for-displacement

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7.7K visualizações.  University of Minnesota.  Um protocolo para a concepção e fabricação de um novo ressonador anel de divisão com base em nanopillar (SRR) é apresentado. 

Vídeo: Fabrication of Nanopillar-Based Split Ring Resonators for Displacement Current Mediated Resonances in Terahertz Metamaterials

Fabricating Metamaterials Using the Fiber Drawing Method

Metamaterials are man-made composite materials, fabricated by assembling components much smaller than the wavelength at which they operate 1. They owe their electromagnetic properties to the structure of their constituents, instead of the atoms that compose them. For example, sub-wavelength metal wires can be arranged to possess an effective electric permittivity that is either positive or negative at a given frequency, in contrast to the metals themselves 2. This unprecedented control over the behaviour of light can potentially lead to a number of novel devices, such as invisibility cloaks 3, negative refractive index materials 4, and lenses that resolve objects below the diffraction limit 5. However, metamaterials operating at optical, mid-infrared and terahertz frequencies are conventionally made using nano- and micro-fabrication techniques that are expensive and produce samples that are at most a few centimetres in size 6-7. Here we present a fabrication method to produce hundreds of meters of metal wire metamaterials in fiber form, which exhibit a terahertz plasmonic response 8. We combine the stack-and-draw technique used to produce microstructured polymer optical fiber 9 with the Taylor-wire process 10, using indium wires inside polymethylmethacrylate (PMMA) tubes. PMMA is chosen because it is an easy to handle, drawable dielectric with suitable optical properties in the terahertz region; indium because it has a melting temperature of 156.6 &deg;C which is appropriate for codrawing with PMMA. We include an indium wire of 1 mm diameter and 99.99% purity in a PMMA tube with 1 mm inner diameter (ID) and 12 mm outside diameter (OD) which is sealed at one end. The tube is evacuated and drawn down to an outer diameter of 1.2 mm. The resulting fiber is then cut into smaller pieces, and stacked into a larger PMMA tube. This stack is sealed at one end and fed into a furnace while being rapidly drawn, reducing the diameter of the structure by a factor of 10, and increasing the length by a factor of 100. Such fibers possess features on the micro- and nano- scale, are inherently flexible, mass-producible, and can be woven to exhibit electromagnetic properties that are not found in nature. They represent a promising platform for a number of novel devices from terahertz to optical frequencies, such as invisible fibers, woven negative refractive index cloths, and super-resolving lenses.

Metamaterials at terahertz frequencies offer unique opportunities, but are challenging to fabricate in bulk. We adapt the fabrication procedure for microstructured polymer optical fibers to inexpensively fabricate metamaterials potentially on an industrial scale. We produce polymethylmethacrylate fibers containing ~10 &mu;m diameter indium wires separated by ~100 &mu;m, which exhibit a terahertz plasmonic response.

Os metamateriais usando o método de fabricação Desenho de Fibra

Metamaterials are man-made composite materials, fabricated by assembling components much smaller than the wavelength at which they operate 1. They owe ...

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Terahertz Microfluidic Sensing Using a Parallel-plate Waveguide Sensor

Refractive index (RI) sensing is a powerful noninvasive and label-free sensing technique for the identification, detection and monitoring of microfluidic samples with a wide range of possible sensor designs such as interferometers and resonators 1,2. Most of the existing RI sensing applications focus on biological materials in aqueous solutions in visible and IR frequencies, such as DNA hybridization and genome sequencing. At terahertz frequencies, applications include quality control, monitoring of industrial processes and sensing and detection applications involving nonpolar materials.
Several potential designs for refractive index sensors in the terahertz regime exist, including photonic crystal waveguides 3, asymmetric split-ring resonators 4, and photonic band gap structures integrated into parallel-plate waveguides 5. Many of these designs are based on optical resonators such as rings or cavities. The resonant frequencies of these structures are dependent on the refractive index of the material in or around the resonator. By monitoring the shifts in resonant frequency the refractive index of a sample can be accurately measured and this in turn can be used to identify a material, monitor contamination or dilution, etc.
The sensor design we use here is based on a simple parallel-plate waveguide 6,7. A rectangular groove machined into one face acts as a resonant cavity (Figures 1 and 2). When terahertz radiation is coupled into the waveguide and propagates in the lowest-order transverse-electric (TE1) mode, the result is a single strong resonant feature with a tunable resonant frequency that is dependent on the geometry of the groove 6,8. This groove can be filled with nonpolar liquid microfluidic samples which cause a shift in the observed resonant frequency that depends on the amount of liquid in the groove and its refractive index 9.
Our technique has an advantage over other terahertz techniques in its simplicity, both in fabrication and implementation, since the procedure can be accomplished with standard laboratory equipment without the need for a clean room or any special fabrication or experimental techniques. It can also be easily expanded to multichannel operation by the incorporation of multiple grooves 10. In this video we will describe our complete experimental procedure, from the design of the sensor to the data analysis and determination of the sample refractive index.

The procedure for implementing a refractive index sensor for terahertz frequencies based on a grooved parallel-plate waveguide geometry is described here. The method yields a measurement of the refractive index of a small volume of liquid through monitoring of the shift in the resonant frequency of the waveguide structure

Sensoriamento terahertz microfluídicos usando um sensor de guia de onda de placas paralelas

Refractive index (RI) sensing is a powerful noninvasive and label-free sensing technique for the identification, detection and monitoring of microfluidic ...

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters

In this video article we present a detailed demonstration of a highly efficient method for generating terahertz waves. Our technique is based on photoconduction, which has been one of the most commonly used techniques for terahertz generation 1-8. Terahertz generation in a photoconductive emitter is achieved by pumping an ultrafast photoconductor with a pulsed or heterodyned laser illumination. The induced photocurrent, which follows the envelope of the pump laser, is routed to a terahertz radiating antenna connected to the photoconductor contact electrodes to generate terahertz radiation. Although the quantum efficiency of a photoconductive emitter can theoretically reach 100%, the relatively long transport path lengths of photo-generated carriers to the contact electrodes of conventional photoconductors have severely limited their quantum efficiency. Additionally, the carrier screening effect and thermal breakdown strictly limit the maximum output power of conventional photoconductive terahertz sources. To address the quantum efficiency limitations of conventional photoconductive terahertz emitters, we have developed a new photoconductive emitter concept which incorporates a plasmonic contact electrode configuration to offer high quantum-efficiency and ultrafast operation simultaneously. By using nano-scale plasmonic contact electrodes, we significantly reduce the average photo-generated carrier transport path to photoconductor contact electrodes compared to conventional photoconductors 9. Our method also allows increasing photoconductor active area without a considerable increase in the capacitive loading to the antenna, boosting the maximum terahertz radiation power by preventing the carrier screening effect and thermal breakdown at high optical pump powers. By incorporating plasmonic contact electrodes, we demonstrate enhancing the optical-to-terahertz power conversion efficiency of a conventional photoconductive terahertz emitter by a factor of 50 10.

We describe methods for the design, fabrication, and experimental characterization of plasmonic photoconductive emitters, which offer two orders of magnitude higher terahertz power levels compared to conventional photoconductive emitters.

Projeto, fabricação e Experimental Caracterização de plasmônicos Emissores Terahertz Photoconductive

In this video article we present a detailed demonstration of a highly efficient method for generating terahertz waves. Our technique is based on ...

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

Plasmonics is an emerging technology capable of simultaneously transporting a plasmonic signal and an electronic signal on the same information support1,2,3. In this context, metal nanowires are especially desirable for realizing dense routing networks4. A prerequisite to operate such shared nanowire-based platform relies on our ability to electrically contact individual metal nanowires and efficiently excite surface plasmon polaritons5 in this information support. In this article, we describe a protocol to bring electrical terminals to chemically-synthesized silver nanowires6 randomly distributed on a glass substrate7. The positions of the nanowire ends with respect to predefined landmarks are precisely located using standard optical transmission microscopy before encapsulation in an electron-sensitive resist. Trenches representing the electrode layout are subsequently designed by electron-beam lithography. Metal electrodes are then fabricated by thermally evaporating a Cr/Au layer followed by a chemical lift-off. The contacted silver nanowires are finally transferred to a leakage radiation microscope for surface plasmon excitation and characterization8,9. Surface plasmons are launched in the nanowires by focusing a near infrared laser beam on a diffraction-limited spot overlapping one nanowire extremity5,9. For sufficiently large nanowires, the surface plasmon mode leaks into the glass substrate9,10. This leakage radiation is readily detected, imaged, and analyzed in the different conjugate planes in leakage radiation microscopy9,11. The electrical terminals do not affect the plasmon propagation. However, a current-induced morphological deterioration of the nanowire drastically degrades the flow of surface plasmons. The combination of surface plasmon leakage radiation microscopy with a simultaneous analysis of the nanowire electrical transport characteristics reveals the intrinsic limitations of such plasmonic circuitry.

Silver nanowires can simultaneously transport electrons and optical information in the form of surface plasmons. A procedure is described here to realize such a shared circuitry and the limitations at propagating both information carriers are evaluated.

Avaliando plasmônicos Transporte em Prata atual de transporte de nanofios

Plasmonics is an emerging technology capable of simultaneously transporting a plasmonic signal and an electronic signal on the same information ...

Fabrication and Characterization of Superconducting Resonators

Superconducting microwave resonators are of interest for a wide range of applications, including for their use as microwave kinetic inductance detectors (MKIDs) for the detection of faint astrophysical signatures, as well as for quantum computing applications and materials characterization. In this paper, procedures are presented for the fabrication and characterization of thin-film superconducting microwave resonators. The fabrication methodology allows for the realization of superconducting transmission-line resonators with features on both sides of an atomically smooth single-crystal silicon dielectric. This work describes the procedure for the installation of resonator devices into a cryogenic microwave testbed and for cool-down below the superconducting transition temperature. The set-up of the cryogenic microwave testbed allows one to do careful measurements of the complex microwave transmission of these resonator devices, enabling the extraction of the properties of the superconducting lines and dielectric substrate (e.g., internal quality factors, loss and kinetic inductance fractions), which are important for device design and performance.

Superconducting microwave resonators are of interest for detection of light, quantum computing applications and materials characterization. This work presents a detailed procedure for fabrication and characterization of superconducting microwave resonator scattering parameters.

Fabricação e caracterização de supercondutores Resonators

Superconducting microwave resonators are of interest for a wide range of applications, including for their use as microwave kinetic inductance detectors ...

Colloidal Synthesis of Nanopatch Antennas for Applications in Plasmonics and Nanophotonics

We present a method for colloidal synthesis of silver nanocubes and the use of these in combination with a smooth gold film, to fabricate plasmonic nanoscale patch antennas. This includes a detailed procedure for the fabrication of thin films with a well-controlled thickness over macroscopic areas using layer-by-layer deposition of polyelectrolyte polymers, namely poly(allylamine) hydrochloride (PAH) and polystyrene sulfonate (PSS). These polyelectrolyte spacer layers serve as a dielectric gap in between silver nanocubes and a gold film. By controlling the size of the nanocubes or the gap thickness, the plasmon resonance can be tuned from about 500 nm to 700 nm. Next, we demonstrate how to incorporate organic sulfo-cyanine5 carboxylic acid (Cy5) dye molecules into the dielectric polymer gap region of the nanopatch antennas. Finally, we show greatly enhanced fluorescence of the Cy5 dyes by spectrally matching the plasmon resonance with the excitation energy and the Cy5 absorption peak. The method presented here enables the fabrication of plasmonic nanopatch antennas with well-controlled dimensions utilizing colloidal synthesis and a layer-by-layer dip-coating process with the potential for low cost and large-scale production. These nanopatch antennas hold great promise for practical applications, for example in sensing, ultrafast optoelectronic devices and for high-efficiency photodetectors.

A protocol for the colloidal synthesis of silver nanocubes and fabrication of plasmonic nanoscale patch antennas with sub-10 nm gaps is presented.

Coloidal Síntese de nanopatch Antenas para aplicações em plasmônica e Nanophotonics

We present a method for colloidal synthesis of silver nanocubes and the use of these in combination with a smooth gold film, to fabricate plasmonic ...

Stimulated Stokes and Antistokes Raman Scattering in Microspherical Whispering Gallery Mode Resonators

Dielectric microspheres can confine light and sound for a length of time through high quality factor whispering gallery modes (WGM). Glass microspheres can be thought as a store of energy with a huge variety of applications: compact laser sources, highly sensitive biochemical sensors and nonlinear phenomena. A protocol for the fabrication of both the microspheres and coupling system is given. The couplers described here are tapered fibers. Efficient generation of nonlinear phenomena related to third order optical non-linear susceptibility &#935;(3) interactions in triply resonant silica microspheres is presented in this paper. The interactions here reported are: Stimulated Raman Scattering (SRS), and four wave mixing processes comprising Stimulated Anti-stokes Raman Scattering (SARS). A proof of the cavity-enhanced phenomenon is given by the lack of correlation among the pump, signal and idler: a resonant mode has to exist in order to obtain the pair of signal and idler. In the case of hyperparametric oscillations (four wave mixing and stimulated anti-stokes Raman scattering), the modes must fulfill the energy and momentum conservation and, last but not least, have a good spatial overlap.

Efficient generation of nonlinear phenomena related to third order optical non-linear susceptibility &#935;(3) interactions in triply resonant silica microspheres is presented in this paper. The interactions here reported are: Stimulated Raman Scattering (SRS), and four wave mixing processes comprising Stimulated Anti-stokes Raman Scattering (SARS).

Estimulada Stokes e Antistokes Raman Scattering em microparticulas Whispering Gallery Modo Resonators

Dielectric microspheres can confine light and sound for a length of time through high quality factor whispering gallery modes (WGM). Glass microspheres ...

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Silicon photonic chips have the potential to realize complex integrated quantum information processing circuits, including photon sources, qubit manipulation, and integrated single-photon detectors. Here, we present the key aspects of preparing and testing a silicon photonic quantum chip with an integrated photon source and two-photon interferometer. The most important aspect of an integrated quantum circuit is minimizing loss so that all of the generated photons are detected with the highest possible fidelity. Here, we describe how to perform low-loss edge coupling by using an ultra-high numerical aperture fiber to closely match the mode of the silicon waveguides. By using an optimized fusion splicing recipe, the UHNA fiber is seamlessly interfaced with a standard single-mode fiber. This low-loss coupling allows the measurement of high-fidelity photon production in an integrated silicon ring resonator and the subsequent two-photon interference of the produced photons in a closely integrated Mach-Zehnder interferometer. This paper describes the essential procedures for the preparation and characterization of high-performance and scalable silicon quantum photonic circuits.

Silicon photonic chips have the potential to realize complex integrated quantum systems. Presented here is a method for preparing and testing a silicon photonic chip for quantum measurements.

Medição de Interferência Quântica em uma fonte de silício anel ressonador Photon

Silicon photonic chips have the potential to realize complex integrated quantum information processing circuits, including photon sources, qubit ...

Fabrication of Polymer Microspheres for Optical Resonator and Laser Applications

This paper describes three methods of preparing fluorescent microspheres comprising &#960;-conjugated or non-conjugated polymers: vapor diffusion, interface precipitation, and mini-emulsion. In all methods, well-defined, micrometer-sized spheres are obtained from a self-assembling process in solution. The vapor diffusion method can result in spheres with the highest sphericity and surface smoothness, yet the types of the polymers able to form these spheres are limited. On the other hand, in the mini-emulsion method, microspheres can be made from various types of polymers, even from highly crystalline polymers with coplanar, &#960;-conjugated backbones. The photoluminescent (PL) properties from single isolated microspheres are unusual: the PL is confined inside the spheres, propagates at the circumference of the spheres via the total internal reflection at the polymer/air interface, and self-interferes to show sharp and periodic resonant PL lines. These resonating modes are so-called "whispering gallery modes" (WGMs). This work demonstrates how to measure WGM PL from single isolated spheres using the micro-photoluminescence (&#181;-PL) technique. In this technique, a focused laser beam irradiates a single microsphere, and the luminescence is detected by a spectrometer. A micromanipulation technique is then used to connect the microspheres one by one and to demonstrate the intersphere PL propagation and color conversion from coupled microspheres upon excitation at the perimeter of one sphere and detection of PL from the other microsphere. These techniques, &#181;-PL and micromanipulation, are useful for experiments on micro-optic application using polymer materials.

Protocols for the synthesis of microspheres from polymers, the manipulation of microspheres, and micro-photoluminescence measurements are presented.

Fabricação de Microsferas de Polímeros para Resonadores Ópticos e Aplicações Laser

This paper describes three methods of preparing fluorescent microspheres comprising &#960;-conjugated or non-conjugated polymers: vapor diffusion, ...

Fabrication of Ultra-thin Color Films with Highly Absorbing Media Using Oblique Angle Deposition

Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.&#160; We present an advanced method for fabricating ultra-thin color films with improved characteristics. The proposed process addresses several fabrication issues, including large area processing. Specifically, the protocol describes a process for fabricating ultra-thin color films using an electron beam evaporator for oblique angle deposition of germanium (Ge) and gold (Au) on silicon (Si) substrates.&#160; Film porosity produced by the oblique angle deposition induces color changes in the ultra-thin film. The degree of color change depends on factors such as deposition angle and film thickness. Fabricated samples of the ultra-thin color films showed improved color tunability and color purity. In addition, the measured reflectance of the fabricated samples was converted into chromatic values and analyzed in terms of color. Our ultra-thin film fabricating method is expected to be used for various ultra-thin film applications such as flexible color electrodes, thin film solar cells, and optical filters. Also, the process developed here for analyzing the color of the fabricated samples is broadly useful for studying various color structures.

We present a detailed method for fabricating ultra-thin color films with improved characteristics for optical coatings. The oblique angle deposition technique using an electron beam evaporator allows improved color tunability and purity. Fabricated films of Ge and Au on Si substrates were analyzed by reflectance measurements and color information conversion.

Fabricação de filmes de cor ultra-fino com altamente absorvente Media usando ângulo oblíquo deposição

Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.&#160; We present ...