这项工作是部分地在康奈尔大学纳米科学与技术基金，国家纳米技术基础设施网络的成员，这是由美国国家科学基金会（ECCS格兰特-1542081）支持执行。我们承认从美国空军研究实验室（AFRL）这项工作的支持。这种材料是基于由下奖号ECCS14052481美国国家科学基金会部分支持工作。

注:此协议假定光子芯片已经制造。这里所描述的芯片（在图1A中示出）使用用于硅光子器件11标准加工技术在康奈尔大学纳米科技设施制造。这些方法包括使用硅绝缘体上硅片（220 nm厚的硅层构成的，二氧化硅的3-μm的层，和一个525微米厚的硅衬底），电子束光刻，以限定条波导（500纳米范围内），和二氧化硅包层（〜3微米厚）的等离子体增强化学气相沉积。微环谐振器在设计时的18.5微米内半径和150nm的波导至环形间隙。优点对于本装置的数字包括损失，品质因数，自由光谱范围，和分散。 1.光子芯片的制备<ol><li>放置一个小的Amoun蜡在对横截面抛光安装吨并加热到〜130℃。 注:蜡的使用量取决于安装在所述样本的尺寸。必须有足够的蜡，以保持芯片不动，而过多会导致在芯片方面蜡。 </li><li>放置在抛光的部分中的光子芯片与蜡装入。确保使芯片是对所述安装平面将蜡完全熔化。处理芯片时要避免损坏方面使用塑料镊子。 </li><li>允许安装在周围空气中冷却，使蜡凝固。冷却比这更快可能导致芯片的损坏。 </li><li>抛光的芯片方面。 注:选择正确的磨削垫与垫是过于激进可导致抛光远超出期望的芯片的开始是很重要的。 <ol><li>附加抛光安装到抛光机和抛光只有几秒钟。带有3微米的粗糙度甲垫已被证明是一个很好的起点为硅芯片具有约1cm小面的长度。 </li><li>取出抛光安装和检查芯片方面，以确定该芯片是如何安装的水平。 注:显微镜是用于测量波导的端部与所述芯片的小面之间的距离是有用的。这些测量允许小面和要确定的波导之间的角度。 </li><li>请以提高芯片的流平性，以在抛光机上的微米必要的调整。 </li><li>重复步骤1.4.1-1.4.3直到芯片的端面和波导内的是相互正交的0.15°。 </li><li>波兰在〜50μm时，检查每个步骤之间的芯片，以监视剩余的距离，直到有〜100微米的步骤芯片左抛光。如果在任何点处的包层似乎是从该表面剥离，确保垫作为抛光从芯片的底部的顶部旋转如此。 注意:这也可能有助于使用抛光润滑剂代替水。这是分层的包层应力的结果，并且是在制造过程需要优化的指示。 </li><li>改变为1微米的研磨垫和抛光，直到有〜20μm的余留。 </li><li>改变为0.5微米的衬垫，并继续研磨另外15微米。 </li><li>使用的最终5μm的0.1μm的垫，以确保平稳的方面。硅光子芯片的研磨前后的小面的显微镜图像示于图2。 </li></ol></li><li>加热的安装与连接的芯片至〜130℃，以使蜡熔化。 </li><li>一旦蜡完全融化，取出从安装芯片，让它慢慢冷却。 </li><li>清洁任何使用丙酮，异丙醇，和水的芯片的剩余蜡。 </li></ol> 2.光纤尾纤的制备<ol><li>剥去任何缓冲或涂层FROM单模光纤（SMF）尾纤的端部和从超高数值孔径（娜）光纤的一端。 </li><li>清洁纤维的裸露端用丙酮和甲醇的混合物中。 </li><li>切割两条光纤的裸露端与商用光纤切割。 </li><li>熔接纤维的切割端。一种用于拼接SMF到娜纤维配方示于表1中 。 </li><li>在拼接滑动的保护套，并放置在该套筒烘箱永久其附加到纤维。 </li><li>重复步骤2.1-2.5中以制备总共三个纤维。 </li></ol> 3.测试设置的配置注意:测试设置的图示于图1B。安装件用于芯片是铜基座，其与一个热电冷却器（TEC）相接触。有装配有可见光和红外（IR）摄像机用于观察所述光子芯片的显微镜。 <ol><li>地点安装蜡的芯片上的小量和施加电压到TEC以熔化蜡。 </li><li>放置在熔化的蜡片，确保其在山上坐平。 </li><li>取下TEC电压和允许安装和芯片慢慢冷却。 </li><li>各拼接纤维的重视与聚酰亚胺带的纤维V形槽和安装单个V形槽的每个使用制造商提供的安装硬件的3轴级。 </li><li>光纤边缘耦合。 <ol><li>三个纤维连接到它们各自的部件:一个激光器的光输出，另两个光功率米。 </li><li>调整显微镜，使其聚焦在波导到达边缘的芯片上。 </li><li>靠近芯片边缘的纤维，使得它们在可见光相机的视点位置，并调整它们的高度，使得每个纤维的芯处于焦点。 </li><li>调整纤维的水平定位与阶段micrometeRS使他们一字排开与波导。 </li><li>打开激光和调整所述输入光纤的水平和垂直位置的千分尺，直到光被耦合到所述波导的光输出。这将显示红外线摄像机沿输入波导散射上。 </li><li>调谐激光器的波长到其中微环形谐振腔被点亮的相机上的点。这表明谐振条件被满足并且该光在到达输出波导。 </li><li>调整输出纤维的水平和垂直位置微米直到存在来自波导的功率表延伸的光的可测量的量。 </li><li>通过操纵三种纤维的水平和垂直位置微米最大化功率到两个检测器。 </li><li>通过使用压电控制研究进行精细调整时的水平和垂直位置的纤维进一步最大化的电源检测器ERS。 </li><li>使用压电控制器移动纤维稍微靠近芯片。确保不使用微米的纤维推到芯片上，因为这样做可能会破坏纤维的切开端。 </li><li>重复步骤3.5.9和3.5.10，直到纤维对芯片的两侧紧压。 注意:从波导，加上波导传输差过度散射光，可以是波导缺陷的指示。这些可以包括，但不限于，材料缺陷位点，拼接边界，和过度的波导粗糙度。 </li></ol></li><li>放置激光器和所述芯片之间的基于光纤的偏振控制器。这允许，它使向芯片的偏振状态的控制。波导，作为较宽的大于高度，有助于最小化任何片上的偏振旋转。 </li><li>色散特性。 <ol><li>调谐激光器输出的偏振以最大化耦合到<html>该芯片。该装置被设计用于横向电场（TE）偏振，并且同样地，横向磁（TM）偏振具有高得多的损耗。 </li><li>扫描的波长范围内的感兴趣的可调谐激光器（1510 nm至在这种情况下1600纳米），并监视的功率表。在透射光谱的任何伪像可能是由于从纤维片界面极化和标准具效应的TM分量的组合。 </li><li>定位在频谱中的谐振波长，并且还提取每个共振的带宽。这种特殊的芯片具有带宽小如65时，其转换为至多23000的品质因数（Q）。 </li><li>确定自由光谱范围（FSR），谐振器之间的距离，对于每个相邻的一对共振的。这种特定的设备具有〜5nm的FSR。 </li><li>计算使用下面的公式FSR的每个值的导模的群折射率（n g）项 : N 5&quot; SRC = "/文件/ ftp_upload / 55257 / 55257eq5.jpg"/&gt; 其中λ为波长，r是微环形谐振腔的半径。上面的等式是组索引的一个一阶近似。 </li><li>使用每个谐振的带宽，以确定与该组索引的每个值相关联的宽度性（Δn 克 ）。 </li><li>选择用于两个泵浦激光器，使得它们在光谱共振重合和具有奇数个（ 图1C）在它们之间谐振的波长。 </li><li>确定使用下面的等式的简并双光子的波长: <img alt="公式6" src="/files/ftp_upload/55257/55257eq6.jpg" /> 其中λ 泵1和λ 泵2是泵的光子的波长。 </li><li>添加水平线上组索引相对于波长，这两个泵浦波长（ 图3）之间延伸的曲线图。如果有可能的林e的n 克内的所有感兴趣的三个波长同时坐±Δ 体中 ，相位匹配条件得到满足，并且可以通过SFWM生成光子。如果它是不可能的，尽量选用泵浦波长更密切的一起，并再次检查。 </li></ol></li><li>第二可调谐激光源和偏振控制器添加到安装和从与1×2光纤合并两个激光器结合的光输出。 </li><li>立即芯片之前添加了一系列的基于光纤的陷波滤波器（其中足以达到衰减〜120分贝）。 注意:滤波器允许既泵浦波长通过，但拒绝该双光子波长。它们有助于耦合到所述芯片之前，以除去过量的噪声（ 即，宽带拉曼光纤散射）。该过滤器光谱示于图1B。 </li><li>添加一系列的基于光纤的带通滤波器（其中足以达到衰减〜150分贝）后立即芯片。 注:过滤器应足够宽，使双光子通过，但足够窄拒绝泵光子。需要两套这些，对于每个输出一组。该过滤器光谱示于图1B。 </li><li>从各组过滤器发送拒绝光子分离功率计。 注意:这些电表用于监控光耦合到芯片也可用于确定泵激光器的谐振剩余。 </li><li>从每个组的基于纤维的过滤器的单独的光输出连接到单光子检测器（SPD）和来自SPD的两个电信号输出连接到一个重合相关器。 </li><li>交叉的一对钨的探针，并设置提示向下螺旋的一条腿（〜长度为1毫米）的MZI。 </li><li>连接电源到两个交叉的探针，使得当施加电压时它们所产生的热量。这将作为移相器对于t他MZI。 注意:请参阅用于更标准化的方法的光子器件的热调谐的描述讨论。 </li></ol> 4.测量双光子干涉<ol><li>调两个泵浦激光器所选择的波长。使用被监控拒绝泵浦光子以确保两个激光器调谐到谐振电源米。当激光器被正确地调谐到所需的共振，从过滤器的拒绝信号将被最大化。 </li><li>来自每个激光器设置的光功率输出至-3 dBm的。 注意:这将导致&lt;100μW在芯片。它保持泵浦功率这种低，以便最小化损失（由多光子吸收和自由载流子吸收）和保持稳定性（通过最小化光诱导热偏移）是重要的。 PN结可以用来从波导除去运营商更好地适应更高的泵浦功率。 </li><li>监控巧合计数（同步跨过两个端口理性单打）通过〜220个PS上积分有关数据的峰值。当最小的100个巧合计数已收集足够的积分时间已经过去了。 注:积分窗口应足够宽，以占浪涌保护器的定时抖动。 </li><li>设置了移相器的初始电压（ 例如，0V）的电源。 </li><li>扫描整个波长范围的可调谐激光器的一个，并使用所收集的拒绝泵浦光子确认感兴趣的共振位置的电表。设置泵激光器到对应于所希望的共振的波长。 注意:每个移相器的电压变化作为热调谐可以导致在谐振波长小偏移的时间来完成这一步是很重要的。 </li><li>收集来自重合相关器所产生的数据（单光子计数以及重合计数）为先前选择的积分时间。在此，第90号的积分时间被选为具有32皮秒的定时精度。 </li><li>增加由5毫伏施加到移相器上的电压。 </li><li>直到数据已经被收集的电压的所需的范围，重复步骤4.4-4.6。 注:最大电压被限制在2.4V，由于该电压以上的探针的快速降解。 </li><li>整合为每个电源电压一致的峰在〜220 ps至确定巧合的总数（ 图4）。 </li><li>集成了320纳秒由符合峰值客场取得了意外的巧合。使用这个结果计算重合高峰记号的数量。 </li><li>适合从用下面的修饰的正弦函数的每个检测器的单打计数: <img alt="公式7" src="/files/ftp_upload/55257/55257eq7.jpg" /> 其中A，B，C，D，E，和F是拟合参数。这种配合是必要的，因为非线性relationsh电压和引起的热偏移（相对相位）之间的IP。 </li><li>自变量转换为相对相位对于所有三组数据（单曲来自每个检测器和重合计数计数）用下面的等式: <img alt="方程8" src="/files/ftp_upload/55257/55257eq8.jpg" /> 其中B，C，D，和E是从步骤4.11的拟合参数。这种转换是可能的，因为一个MZI 12的公知的正弦传递函数。 </li><li>适合用下面的正弦函数的重合数据（具有相对相位作为独立变量）: <img alt="公式9" src="/files/ftp_upload/55257/55257eq9.jpg" /> 其中A和B是拟合参数。 </li><li>计算与下面的公式每个干涉图案的可见性: <img alt="10式" src="/files/ftp_upload/55257/55257eq10.jpg" /> 其中ƒ（θ）max和ƒ（ <em&gt;θ）min与 ƒ（θ）的最大值和最小值，分别。 1可视性对应于一个完美的干涉图案。 </li></ol>

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我们什么都没有透露。

有针对的集成光子领域，以便光子器件的复杂和可扩展的系统是可行的，克服多重挑战。这些措施包括，但不限于:紧制造公差，从环境的不稳定性隔离，以及各种形式的损失最小化。有在上述协议，有助于最小化光子器件的损耗的关键步骤。 之一在损失最小化的最重要的要求是紧密匹配的纤维和波导的光学模式。部分困难从大模场直径的SMF（MFD）（〜10微米）的茎。上的集成设备侧，有一个小得多的MFD（&lt;1微米）500nm的范围内的硅波导。的SMF至娜光纤的长度或放置的逆锥形到光子芯片的边缘:光纤和波导之间的这种模式转换能在两个方面得到改善。拼接区域betwEEN的SMF和娜纤维作为模式转换器，降低了模式的大小，以〜3微米。逆锥形用于通过减小波导的宽度随着接近小面扩大芯片上的模式。该芯片使用从500nm的波导到150个纳米尖端（在芯片的面）的线性锥形，具有300μm的过渡长度。波导宽度在光模的有效折射率的减小芯片结果的边缘，并反过来的锥形，模式膨胀。 芯片面的抛光也减少光损耗非常重要。两个问题，同时抛光在所需表面上停止和剥离上部包层材料。理想情况下，小的最终位置将在锥形的结束是精确。然而，这是相当难以实现，并且由于该原因，该锥形的尖端通过100μm的延伸，使得所述抛光可以之前被停止几微米锥度开始。如果过少的材料被去除时，模式就不会被作为有效地被锥形捕获。如果过多的材料被除去，会有在纤维/芯片接口更大模式失配，并且更多的光将被丢失。另一个主要关注的是上包层的分层。如果有与制造（清洁度或过大的应力在包层）的问题，包层可以不粘附到基板在芯片的边缘。当分层发生在波导中的一个出现，这将导致非常差的耦合效率。如果抛光过程中发现，除水以外的抛光润滑剂通常都能改善的结果。 有必要提供一种在上述方案的改进。最大的改进将来自使用更标准的方法热调谐装置。这里使用的方法是一种简化的制造工艺，不包括任何金属层的结果。通常情况下，电阻箱TAL层用于加热元件，并且被用于从焊盘到加热器元件接触垫和导线高导电性金属层。然后，阶段可用于设置向下探针到焊盘，从而允许一个电压被施加到所述加热器。这使得控制和稳定性更高水平。类似于在这里但金属加热器测试的硅光子芯片被示出在附图中的视频。 有将光耦合到所述光芯片的其他方法。对于这项工作，使用边缘耦合。其他常见的方法包括自由空间耦合和光栅耦合。自由空间耦合依赖的体光学元件对准和将光束聚焦到波导在芯片的边缘。以这种方式耦合的缺点是，它可以是非常难以优化的光束的对准，并且总是会有在界面处的反射，由于折射率差。光栅耦合器从波散射光引导垂直，从而使纤维的端部可以在包层的表面被放置为耦合到所述设备。这些也有一些问题，包括难对准（该纤维往往是视线显微镜的线）和更高的损耗。光纤边缘耦合也不是完美的。压在芯片中的纤维可能会损坏光纤的端部，并且两个纤维和芯片边缘需​​要频繁清洁。纤维边缘耦合的好处在于，所述对准是远高于其他两种方法更容易，并且能够实现低损失的。 由于光学系统复杂性的增加，对他们大规模进入一个稳定的平台，唯一可行的办法是在一个集成的系统，就像电子技术的路径。目前的挑战是合并集成光子学平台与本体和已部署的基于光纤的光学系统。随着基于光子的量子信息系统的利用率，其中INFormation空间尺度呈指数（与古典系统的线性缩放比例），相稳定性和低损失的集成光子技术是最重要的成功。我们所描述的方案作为初始路径向前推进这一新兴技术。

硅有出息作为光电子平台量子信息处理1，2，3，4，5。一个量子光子电路的重要组成部分是光子源。光子对源已经从硅开发了微环谐振器的通过第三阶非线性方法制备的形式中，自发四波混频（SFWM）6，7，8。这些源能够产生对不可区分的光子，这是理想的，涉及光子缠结9实验的。 需要注意的是环形谐振器源可与顺时针和逆时针传播两个操作是很重要的，并且两个不同的传播方向是基因反弹相互独立。这允许单个环用作两个源。当从两个方向光学泵浦，这些源生成以下纠缠态: <img alt="式（1）" src="/files/ftp_upload/55257/55257eq1.jpg" />哪里<img alt="公式2" src="/files/ftp_upload/55257/55257eq2.jpg" />和<img alt="公式3" src="/files/ftp_upload/55257/55257eq3.jpg" />是独立产生算符为clockwise-和逆时针传播的双光子，分别。这是被称为N00N状态（N = 2）10纠缠态的一个非常理想的形式。 通过芯片上的马赫 - 曾德尔干涉仪（MZI）传递这种状态导致的状态: <img alt="公式4" src="/files/ftp_upload/55257/55257eq4.jpg" />最大巧合，巧合的零之间的这种状态在振荡两次经典的干涉的在MZI的频率，有效地加倍干涉仪10的灵敏度。这里，我们提出用于测试这种集成光子源和MZI设备的过程。

<table border="0" cellpadding="0" cellspacing="0" width="781">
	<colgroup>
		<col />
		<col />
		<col />
		<col />
	</colgroup>
	<tbody>
		<tr height="21">
			<td height="21" style="height:21px;width:339px;">3-Axis NanoMax Flexure Stage</td>
			<td style="width:149px;">Thorlabs</td>
			<td style="width:127px;">MAX312D</td>
			<td style="width:167px;">Precision 3-axis stages</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:339px;">Three Channel Piezo Controller</td>
			<td style="width:149px;">Thorlabs</td>
			<td style="width:127px;">MDT693B</td>
			<td>Piezo controllers for NanoMax stages</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Fiber Polarization Controller</td>
			<td style="width:149px;">Thorlabs</td>
			<td style="width:127px;">FPC562</td>
			<td>3-Paddle fiber-based polarization controller</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Fiber Cleaver</td>
			<td style="width:149px;">Thorlabs</td>
			<td style="width:127px;">XL411</td>
			<td>Fiber cleaver</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Standard V-Groove Fiber Holder</td>
			<td style="width:149px;">Thorlabs</td>
			<td style="width:127px;">HFV001</td>
			<td>standard v-groove mount</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Tapered V-Groove Fiber Holder</td>
			<td style="width:149px;">Thorlabs</td>
			<td style="width:127px;">HFV002</td>
			<td>tapered v-groove mount</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Right-Angle Top Plate for NanoMax Stage</td>
			<td style="width:149px;">Thorlabs</td>
			<td style="width:127px;">AMA011</td>
			<td>right-angle bracket</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">50:50 Fiber Optic Coupler</td>
			<td style="width:149px;">Thorlabs</td>
			<td style="width:127px;">TW1550R5F1</td>
			<td>50/50 combiner</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:339px;">Optical Fiber Fusion Splicer</td>
			<td style="width:149px;">Fujikura</td>
			<td style="width:127px;">FSM-40S</td>
			<td>Fusion splicer</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:339px;">MultiPrep Polishing System - 8&#34;</td>
			<td style="width:149px;">Allied High Tech</td>
			<td style="width:127px;">15-2100</td>
			<td>Chip polisher</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:339px;">Cross-Sectioning Paddle with Reference Edge</td>
			<td style="width:149px;">Allied High Tech</td>
			<td style="width:127px;">15-1010-RE</td>
			<td>Polishing mount</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:339px;">Lightwave Measurement System</td>
			<td style="width:149px;">Keysight</td>
			<td style="width:127px;">8164B</td>
			<td>Mainframe for tunable laser</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:339px;">Tunable Laser Source</td>
			<td style="width:149px;">Keysight</td>
			<td style="width:127px;">81606A</td>
			<td>Tunable laser</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:339px;">Optical Power Sensor</td>
			<td style="width:149px;">Keysight</td>
			<td style="width:127px;">81634B</td>
			<td>Power meter</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:339px;">NIR Single Photon Detector</td>
			<td style="width:149px;">ID Quantique</td>
			<td style="width:127px;">ID210</td>
			<td>Single photon detectors</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:339px;">NIR Single Photon Detector</td>
			<td style="width:149px;">ID Quantique</td>
			<td style="width:127px;">ID230</td>
			<td>Low noise, free-running single photon detectors</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:339px;">PicoHarp</td>
			<td style="width:149px;">PicoQuant</td>
			<td style="width:127px;">PicoHarp 300</td>
			<td>Time-correlated single photon counting</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:339px;">WiDy SWIR InGaAs Camera</td>
			<td style="width:149px;">NIT</td>
			<td style="width:127px;">640U-S</td>
			<td>IR Camera</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:339px;">WDM Bandpass Filter</td>
			<td style="width:149px;">JDS Uniphase</td>
			<td style="width:127px;">30055053-368-2.2</td>
			<td>pump cleanup filters</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:339px;">WDM Bandpass Filter</td>
			<td style="width:149px;">JDS Uniphase</td>
			<td style="width:127px;">1011787-012</td>
			<td>pump rejection filters</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:339px;">Ultra-High Numerical Aperture Fiber</td>
			<td style="width:149px;">Nufern</td>
			<td style="width:127px;">UHNA-7</td>
			<td>high index fiber</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:339px;">Ultra Optical Single Mode Fiber</td>
			<td style="width:149px;">Corning</td>
			<td style="width:127px;">SMF-28</td>
			<td>standard single mode fiber</td>
		</tr>
	</tbody>
</table>

measurement of quantum interference in a silicon ring resonator photon source

硅光子芯片必须实现复杂的集成量子信息处理电路，包括光子源，量子位操作和集成的单光子检测器的潜力。这里，我们提出准备和具有集成光子源和双光子干涉仪测试硅光子量子芯片的关键方面。使所有的产生的光子与最高可能的保真度检测的集成量子电路的最重要的方面是最小化损失。在这里，我们描述了如何通过使用超高数值孔径光纤到硅波导的模式紧密地匹配以进行低损耗边缘耦合。通过使用优化熔接配方中，娜纤维无缝地与标准单模光纤接口。这种低损耗耦合允许高保真光子产生的在集成硅环形谐振器的测量和产生的p的后续双光子干扰hotons在紧密结合Mach-Zehnder干涉。本文介绍的高性能和可扩展的硅量子光子电路的制备和表征的基本程序。

来自每个检测器，以及重合计数单个光子计数，当两个路径之间的相对相位进行了调整收集。各个计数（ 图5A）示出了从一个MZI具有94.5±1.6％和94.9±0.9％能见度经典干涉图案。的符合测量（ 图5B）显示了纠缠态的量子干涉，由振荡作为显然以两倍于传统干涉图案的频率，具有93.3±2.0％的可见性（96.0±2.1与临时记号％减去） 。为了证实主要被在环产生的光子，泵被构造成两个谐振，要求在不被环支撑的波长来产生双光子。 图5B中的橙色线证实，在这样的配置中，不存在显著coincidenc<html> ES。 图6示出了用于在频率是对称对应于所需的双光子谐振可用共振对重合计数。在所有情况下，2θ的相对相位的依赖性是明显的。 <img alt="图1" src="/files/ftp_upload/55257/55257fig1.jpg" /> 图1:硅波导电路实验测试平台。 的（a）指示所述光子的传播方向上的硅光子量子芯片的图像。插图是用于环内发生的四波混频过程中的能量守恒图。 （b）所用的实验装置来测试硅光子电路。 （c）发送所述微环形谐振腔的光谱，具有指示所述泵送配置以及所产生的双光子的波长箭头。S / ftp_upload / 55257 / 55257fig1large.jpg"目标=‘_空白’&gt;点击此处查看该图的放大版本。 <img alt="图2" src="/files/ftp_upload/55257/55257fig2.jpg" /> 图2:小关节改进从抛光。制造之后硅光子芯片的（a）的小平面的但（b）在抛光后的抛光和之前的图像。 <a href="https://ecsource-jove-com.remotexs.ntu.edu.sg/files/ftp_upload/55257/55257fig2large.jpg" target="_blank">请点击此处查看该图的放大版本。</a> <img alt="图3" src="/files/ftp_upload/55257/55257fig3.jpg" /> 图3:波导色散的表征。组索引的波长依赖性的曲线图。红色阴影区域代表整个共振的带宽，并且允许相毫安的易评估tching条件。绿色虚线是水平的，完全位于阴影区域内，表明相匹配条件得到满足。该数据是在整个范围上平坦的事实是零色散的确认。 <a href="https://ecsource-jove-com.remotexs.ntu.edu.sg/files/ftp_upload/55257/55257fig3large.jpg" target="_blank">请点击此处查看该图的放大版本。</a> <img alt="图4" src="/files/ftp_upload/55257/55257fig4.jpg" /> 图4:重合光子的测量。与时间相关器具有90秒的积分时间和32皮秒的定时分辨率测量的巧合峰的曲线图。红色虚线表示重合窗口的边缘，其中，共有459个巧合是。 <a href="https://ecsource-jove-com.remotexs.ntu.edu.sg/files/ftp_upload/55257/55257fig4large.jpg" target="_blank">请点击此处查看该图的放大版本。</a>。 <img alt="图5" src="/files/ftp_upload/55257/55257fig5.jpg" /> 图5:经典和量子干扰测量。 （ 一 ）古典光证明从MZI典型干涉图案作为两个路径之间的相对相位是变化的。 （B）重合相关测量示出的相对的相位的2θ的依赖性。 <a href="https://ecsource-jove-com.remotexs.ntu.edu.sg/files/ftp_upload/55257/55257fig5large.jpg" target="_blank">请点击此处查看该图的放大版本。</a> <img alt="图6" src="/files/ftp_upload/55257/55257fig6.jpg" /> 图6:双光子能见度用于各种泵波长配置。巧合的相关测量的曲线，并计算出用于可见性的泵送波长（ 一个 </str翁&gt;）1,513.5 nm和1,592.0纳米，（B）1,518.2 nm和1,586.9纳米，（C）1,522.9 nm和1,581.8纳米，（D）1,527.7 nm和1,576.7纳米，（E）1,532.4 nm和1,571.6纳米，和（f）1,537.2纳米和1,566.6纳米。在所有情况下，2θ的相对相位的依赖性是明显的。 <a href="https://ecsource-jove-com.remotexs.ntu.edu.sg/files/ftp_upload/55257/55257fig6large.jpg" target="_blank">请点击此处查看该图的放大版本。</a> <table fo:keep-together.within-page="1"><tbody><tr><td colspan="2"> SMF至娜光纤熔接参数</td></tr><tr><td>对齐:核心</td><td>焦点:汽车</td></tr><tr><td> ECF:关</td><td>自动关机</td></tr><tr><td>解理限制:1° </td><td>芯角界限:1° </td></tr><tr><td>清洁放电:150毫秒</td><td>差距:15微米</td></tr><tr><td> Gapset位置:中锋</td><td> Prefuse功率:20位</td></tr><tr><td> Prefuse时间:180毫秒</td><td>重叠:10微米</td></tr><tr><td> ARC1功率:20位</td><td> ARC1时间18,000毫秒</td></tr><tr><td> ARC2:关</td><td> Rearc时间:800毫秒</td></tr><tr><td>圆锥接头:关</td><td></td></tr></tbody></table> 表1:熔接SMF到娜光纤设置。

Watch this Scientific Journal Video about Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source at JoVE.com

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

硅光子芯片必须认识到复杂的集成量子系统的潜力。这里介绍的是用于制备和测试对于量子测量硅光子芯片的方法。

量子干涉效应在硅谐振环光子源测量

Silicon photonic chips have the potential to realize complex integrated quantum information processing circuits, including photon sources, qubit ...

measurement-quantum-interference-silicon-ring-resonator-photon

Nanyang Technological University

Research

JoVE Journal

Engineering

8.3K 次观看.  Rochester Institute of Technology. 硅光子芯片必须认识到复杂的集成量子系统的潜力。这里介绍的是用于制备和测试对于量子测量硅光子芯片的方法。 

视频: Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Gradient Echo Quantum Memory in Warm Atomic Vapor

Gradient echo memory (GEM) is a protocol for storing optical quantum states of light in atomic ensembles. The primary motivation for such a technology is that quantum key distribution (QKD), which uses Heisenberg uncertainty to guarantee security of cryptographic keys, is limited in transmission distance. The development of a quantum repeater is a possible path to extend QKD range, but a repeater will need a quantum memory. In our experiments we use a gas of rubidium 87 vapor that is contained in a warm gas cell. This makes the scheme particularly simple. It is also a highly versatile scheme that enables in-memory refinement of the stored state, such as frequency shifting and bandwidth manipulation. The basis of the GEM protocol is to absorb the light into an ensemble of atoms that has been prepared in a magnetic field gradient. The reversal of this gradient leads to rephasing of the atomic polarization and thus recall of the stored optical state. We will outline how we prepare the atoms and this gradient and also describe some of the pitfalls that need to be avoided, in particular four-wave mixing, which can give rise to optical gain.

The gradient echo memory is a protocol for storing optical quantum states of light in atomic ensembles. Quantum memory is a key element of a quantum repeater, which can extend the range of quantum key distribution. We outline the operation of the scheme when implemented in a 3-level atomic ensemble.

梯度回波量子存储在温暖的原子蒸气

Gradient  echo memory (GEM) is a protocol for storing optical quantum states of light in  atomic ensembles. The primary motivation for such a technology ...

科研

工程学

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Single GaN nanowire (NW) devices fabricated on SiO2 can exhibit a strong degradation after annealing due to the occurrence of void formation at the contact/SiO2 interface. This void formation can cause cracking and delamination of the metal film, which can increase the resistance or lead to a complete failure of the NW device. In order to address issues associated with void formation, a technique was developed that removes Ni/Au contact metal films from the substrates to allow for the examination and characterization of the contact/substrate and contact/NW interfaces of single GaN NW devices. This procedure determines the degree of adhesion of the contact films to the substrate and NWs and allows for the characterization of the morphology and composition of the contact interface with the substrate and nanowires. This technique is also useful for assessing the amount of residual contamination that remains from the NW suspension and from photolithographic processes on the NW-SiO2 surface prior to metal deposition. The detailed steps of this procedure are presented for the removal of annealed Ni/Au contacts to Mg-doped GaN NWs on a SiO2 substrate.

A technique was developed that removes Ni/Au contact metal films from their substrate to allow for the examination and characterization of the contact/substrate and contact/NW interfaces of single GaN nanowire devices.

单氮化镓纳米线设备分析接触界面

Single GaN nanowire (NW) devices fabricated on SiO2 can exhibit  a strong degradation after annealing due to the  occurrence of void formation at the ...

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Measurements of the heat capacity and superfluid fraction of confined 4He have been performed near the lambda transition using lithographically patterned and bonded silicon wafers. Unlike confinements in porous materials often used for these types of experiments3, bonded wafers provide predesigned uniform spaces for confinement. The geometry of each cell is well known, which removes a large source of ambiguity in the interpretation of data.
Exceptionally flat, 5 cm diameter, 375 &#181;m thick Si wafers with about 1 &#181;m variation over the entire wafer can be obtained commercially (from Semiconductor Processing Company, for example). Thermal oxide is grown on the wafers to define the confinement dimension in the z-direction. A pattern is then etched in the oxide using lithographic techniques so as to create a desired enclosure upon bonding. A hole is drilled in one of the wafers (the top) to allow for the introduction of the liquid to be measured. The wafers are cleaned2 in RCA solutions and then put in a microclean chamber where they are rinsed with deionized water4. The wafers are bonded at RT and then annealed at ~1,100 &#176;C. This forms a strong and permanent bond. This process can be used to make uniform enclosures for measuring thermal and hydrodynamic properties of confined liquids from the nanometer to the micrometer scale.

A method for permanently bonding two silicon wafers so as to realize a uniform enclosure is described. This includes wafer preparation, cleaning, RT bonding, and annealing processes. The resulting bonded wafers (cells) have uniformity of enclosure ~1%1,2. The resulting geometry allows for measurements of confined liquids and gasses.

通过硅直接晶圆粘接制造均匀纳米级腔

Measurements of the heat capacity and superfluid fraction of confined 4He have been performed near the lambda transition using lithographically patterned ...

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of biosensing devices. We report on a protocol of using KrF and ArF lasers irradiating Si (001) samples immersed in a liquid environment with low number of pulses and operating at moderately low pulse fluences to induce Si wettability modification. Wafers immersed for up to 4 hr in a 0.01% H2O2/H2O solution did not show measurable change in their initial contact angle (CA) ~75&#176;. However, the 500-pulse KrF and ArF lasers irradiation of such wafers in a microchamber filled with 0.01% H2O2/H2O solution at 250 and 65 mJ/cm2, respectively, has decreased the CA to near 15&#176;, indicating the formation of a superhydrophilic surface. The formation of OH-terminated Si (001), with no measurable change of the wafer&#8217;s surface morphology, has been confirmed by X-ray photoelectron spectroscopy and atomic force microscopy measurements. The selective area irradiated samples were then immersed in a biotin-conjugated fluorescein-stained nanospheres solution for 2 hr, resulting in a successful immobilization of the nanospheres in the non-irradiated area. This illustrates the potential of&#160;the method for selective area biofunctionalization and fabrication of advanced Si-based biosensing architectures. We also describe a similar protocol of irradiation of wafers immersed in methanol (CH3OH) using ArF laser operating at pulse fluence of 65 mJ/cm2 and in situ formation of a strongly hydrophobic surface of Si (001) with the CA of 103&#176;. The XPS results indicate ArF laser induced formation of Si&#8211;(OCH3)x compounds responsible for the observed hydrophobicity. However, no such compounds were found by XPS on the Si surface irradiated by KrF laser in methanol, demonstrating the inability of the KrF laser to photodissociate methanol and create -OCH3 radicals.

We report on a process of in situ alteration of HF treated Si (001) surface into a hydrophilic or hydrophobic state by irradiating samples in microfluidic chambers filled with&#160;H2O2/H2O solution (0.01%-0.5%) or methanol solutions using pulsed UV laser of a relative low pulse fluence.

硅表面润湿性的选择区域改性脉冲紫外激光照射在液体环境

The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of ...

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization.

The fabrication process and experimental characterization techniques relevant to single-electron pumps based on silicon metal-oxide-semiconductor quantum dots are discussed.

硅金属 - 氧化物 - 半导体量子点单电子泵

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by ...

Measurement of X-ray Beam Coherence along Multiple Directions Using 2-D Checkerboard Phase Grating

A procedure for a technique to measure the transverse coherence of synchrotron radiation X-ray sources using a single phase grating interferometer is reported. The measurements were demonstrated at the 1-BM bending magnet beamline of the Advanced Photon Source (APS) at Argonne National Laboratory (ANL). By using a 2-D checkerboard &#960;/2 phase-shift grating, transverse coherence lengths were obtained along the vertical and horizontal directions as well as along the 45&#176; and 135&#176; directions to the horizontal direction. Following the technical details specified in this paper, interferograms were measured at different positions downstream of the phase grating along the beam propagation direction. Visibility values of each interferogram were extracted from analyzing harmonic peaks in its Fourier Transformed image. Consequently, the coherence length along each direction can be extracted from the evolution of visibility as a function of the grating-to-detector distance. The simultaneous measurement of coherence lengths in four directions helped identify the elliptical shape of the coherence area of the Gaussian-shaped X-ray source. The reported technique for multiple-direction coherence characterization is important for selecting the appropriate sample size and orientation as well as for correcting the partial coherence effects in coherence scattering experiments. This technique can also be applied for assessing coherence preserving capabilities of X-ray optics.

The measurement protocol and data analysis procedure are given for obtaining transverse coherence of a synchrotron radiation X-ray source along four directions simultaneously using a single 2-D checkerboard phase grating. This simple technique can be applied for complete transverse coherence characterization of X-ray sources and X-ray optics.

使用2-D棋盘相位光栅X射线束相干测量沿多个方向

A procedure for a technique to measure the transverse coherence of synchrotron radiation X-ray sources using a single phase grating interferometer is ...

Optical Trap Loading of Dielectric Microparticles In Air

We demonstrate a method to trap a selected dielectric microparticle in air using radiation pressure from a single-beam gradient optical trap. Randomly scattered dielectric microparticles adhered to a glass substrate are momentarily detached using ultrasonic vibrations generated by a piezoelectric transducer (PZT). Then, the optical beam focused on a selected particle lifts it up to the optical trap while the vibrationally excited microparticles fall back to the substrate. A particle may be trapped at the nominal focus of the trapping beam or at a position above the focus (referred to here as the levitation position) where gravity provides the restoring force. After the measurement, the trapped particle can be placed at a desired position on the substrate in a controlled manner. 
In this protocol, an experimental procedure for selective optical trap loading in air is outlined. First, the experimental setup is briefly introduced. Second, the design and fabrication of a PZT holder and a sample enclosure are illustrated in detail. The optical trap loading of a selected microparticle is then demonstrated with step-by-step instructions including sample preparation, launching into the trap, and use of electrostatic force to excite particle motion in the trap and measure charge. Finally, we present recorded particle trajectories of Brownian and ballistic motions of a trapped microparticle in air. These trajectories can be used to measure stiffness or to verify optical alignment through time domain and frequency domain analysis. Selective trap loading enables optical tweezers to track a particle and its changes over repeated trap loadings in a reversible manner, thereby enabling studies of particle-surface interaction.

A protocol for launching and stably trapping selected dielectric microparticles in air is presented.

介电微粒的光阱装载在空气中

We demonstrate a method to trap a selected dielectric microparticle in air using radiation pressure from a single-beam gradient optical trap. Randomly ...

Standardized Method for Measuring Collection Efficiency from Wipe-sampling of Trace Explosives

One of the limiting steps to detecting traces of explosives at screening venues is effective collection of the sample. Wipe-sampling is the most common procedure for collecting traces of explosives, and standardized measurements of collection efficiency are needed to evaluate and optimize sampling protocols. The approach described here is designed to provide this measurement infrastructure, and controls most of the factors known to be relevant to wipe-sampling. Three critical factors (the applied force, travel distance, and travel speed) are controlled using an automated device. Test surfaces are chosen based on similarity to the screening environment, and the wipes can be made from any material considered for use in wipe-sampling. Particle samples of the explosive 1,3,5-trinitroperhydro-1,3,5-triazine (RDX) are applied in a fixed location on the surface using a dry-transfer technique. The particle samples, recently developed to simulate residues made after handling explosives, are produced by inkjet printing of RDX solutions onto polytetrafluoroethylene (PTFE) substrates. Collection efficiency is measured by extracting collected explosive from the wipe, and then related to critical sampling factors and the selection of wipe material and test surface. These measurements are meant to guide the development of sampling protocols at screening venues, where speed and throughput are primary considerations.

Optimized sampling protocols and the development of new wipe materials can be facilitated by standardized measurements of collection efficiency from wipe-sampling. Our approach for sampling trace explosives uses an automated device to control speed, force, and distance during wipe-sampling followed by extraction of collected explosives.

从微量炸药的擦拭取样测量收集效率的标准化方法

One of the limiting steps to detecting traces of explosives at screening venues is effective collection of the sample. Wipe-sampling is the most common ...

Fabrication of Polymer Microspheres for Optical Resonator and Laser Applications

This paper describes three methods of preparing fluorescent microspheres comprising &#960;-conjugated or non-conjugated polymers: vapor diffusion, interface precipitation, and mini-emulsion. In all methods, well-defined, micrometer-sized spheres are obtained from a self-assembling process in solution. The vapor diffusion method can result in spheres with the highest sphericity and surface smoothness, yet the types of the polymers able to form these spheres are limited. On the other hand, in the mini-emulsion method, microspheres can be made from various types of polymers, even from highly crystalline polymers with coplanar, &#960;-conjugated backbones. The photoluminescent (PL) properties from single isolated microspheres are unusual: the PL is confined inside the spheres, propagates at the circumference of the spheres via the total internal reflection at the polymer/air interface, and self-interferes to show sharp and periodic resonant PL lines. These resonating modes are so-called "whispering gallery modes" (WGMs). This work demonstrates how to measure WGM PL from single isolated spheres using the micro-photoluminescence (&#181;-PL) technique. In this technique, a focused laser beam irradiates a single microsphere, and the luminescence is detected by a spectrometer. A micromanipulation technique is then used to connect the microspheres one by one and to demonstrate the intersphere PL propagation and color conversion from coupled microspheres upon excitation at the perimeter of one sphere and detection of PL from the other microsphere. These techniques, &#181;-PL and micromanipulation, are useful for experiments on micro-optic application using polymer materials.

Protocols for the synthesis of microspheres from polymers, the manipulation of microspheres, and micro-photoluminescence measurements are presented.

用于光学谐振器和激光应用的聚合物微球的制造

This paper describes three methods of preparing fluorescent microspheres comprising &#960;-conjugated or non-conjugated polymers: vapor diffusion, ...

Synchrotron X-ray Microdiffraction and Fluorescence Imaging of Mineral and Rock Samples

In this report, we describe a detailed procedure for acquiring and processing&#160;x-ray microfluorescence (&#956;XRF), and Laue and powder microdiffraction two-dimensional (2D) maps at beamline 12.3.2 of the Advanced Light Source (ALS), Lawrence Berkeley National Laboratory. Measurements can be performed on any sample that is less than 10 cm x 10 cm x 5 cm, with a flat exposed surface. The experimental geometry is calibrated using standard materials (elemental standards for XRF, and crystalline samples such as Si, quartz, or Al2O3 for diffraction). Samples are aligned to the focal point of the x-ray microbeam, and raster scans are performed, where each pixel of a map corresponds to one measurement, e.g., one XRF spectrum or one diffraction pattern. The data are then processed using the in-house developed software XMAS, which outputs text files, where each row corresponds to a pixel position. Representative data from moissanite and an olive snail shell are presented to demonstrate data quality, collection, and analysis strategies.

We describe a beamline setup meant to carry out rapid two-dimensional x-ray fluorescence and x-ray microdiffraction mapping of single crystal or powder samples using either Laue (polychromatic radiation) or powder (monochromatic radiation) diffraction. The resulting maps give information about strain, orientation, phase distribution, and plastic deformation.