This work was supported by the Ministry of Science and Technology, Taiwan, Republic of China through Grant No. 101-2113-M-001-006-MY3.

1. TCDAP 12制备<ol><li>通过以下文献方法13合成TCDAP。 </li><li>由温度梯度升华法纯化TCDAP产物，用设定在340，270中的三个温度区，和250℃，分别10 -6乇12,14的真空压力下。 </li></ol> 2.成长TCDAP使用物理气相传输（PVT）系统14的单晶<ol><li>把TCDAP样品在船（5厘米长）的一端和船形加载到玻璃内管（长度为15厘米直径为1.2厘米）。 </li><li>加载内管成一个较长的玻璃管（83厘米长和2厘米，直径），并在将其推到从开口约17厘米</li><li>加载长玻璃管成铜管（60厘米长，直径为2.5厘米）的水平固定在机架上;请确保TCDAP的船位于供热面积由加热带AR定义的中间ound铜管。 </li><li>吹扫用氦气的PVT系统以30毫升/分的流速，然后打开变压器到加热带加热到310℃;保持在此温度下两天。 </li><li>该系统冷却至室温后，收集从内管的晶体。 </li></ol> 3.设备制造<ol><li>放一个200-μm厚的，透明的，预切PET制基板（2毫升×1厘米）到小瓶并通过超声处理在洗涤剂溶液，去离子水和丙酮清洗，在顺序，对于每个30分钟。干燥用氮气流在衬底。 </li><li>放置在PET基材上的双面胶带。 </li><li>检查在立体显微镜下的晶体。选择品质好，闪亮晶体，约5毫米×至0.03MM器件制造的维度。放置与双面胶带在PET基材的长度的针状TCDAP晶体平行并安全地固定。 </li><li>在立体显微镜，笏申请通过在一个线（几个毫米）微升注射器针头呃基于胶体石墨是从作为源极和漏极晶体的两端延伸。等待大约30分钟的胶体石墨干燥并测量在光学显微镜下在两个石墨点之间的距离，以确定准确的信道长度（其保持在0.6-1毫米）。 </li><li>使用碳导电胶带固定在显微镜载玻片PET基材。附近放置淀积室的热解管的端部滑动。 </li><li>称量0.5g上述介电绝缘体的前体，[2.2]对环芳烷，将其在热解管的入口附近。 </li><li>系统抽真空到10 -2乇的真空。靠近管向上的中心的热解区的预加热至700℃预先设定的温度，并在此温度下保持。 </li><li>升温[2.2]二聚二甲苯样品150℃。前体的蒸气将通过热解区得到的单体，这将凝结邻近所述热解管聚合的末端。 </li><li>让热解/聚合反应继续进行2小时。 </li><li>冷却系统，并从裂解管取出样品。 </li><li>通过测量该层的台阶高度并使用轮廓根据制造商的说明衬底决定所沉积的介电层的厚度。 </li><li>通过微升注射器针头在上介电层的晶体上方的返回线应用基于异丙醇的胶体石墨，作为栅极电极。 </li></ol> 4.测量设备的性能<ol><li>使用手术刀通过源电极/漏电极区上方的聚合物电介体膜，以便露出所述电极下方，用于连接到切割的孔。 </li><li>随着立场和夹具的帮助下，把从参数分析仪电极探头接触到源极/漏极/栅极。根据制造商的说明在不同的栅极电位记录IV特性。 注意:在此，栅电位是从-60V。设为60伏，在15V的步骤。 </li></ol> 5.弯曲疲劳试验<ol><li>为了测量拉伸状态的属性，回绕不同半径（14.0mmol毫米，12.4毫米，8.0毫米，和5.8 MM）的气缸柔性的PET衬底的背面并固定的四个侧面真空胶带PET基板到气缸。 </li><li>探针连接到源极/漏极/栅极和如4.2中所述测量在不同的栅电势的IV特性。 </li><li>为了测量在压缩状态下，包裹半左右的汽缸的端部的PET制基板的前侧的，这样，晶体/源极/漏极/栅极电极所面对的汽缸，但仍露出。固定在真空带（ 见图气缸PET基板5 </strong&gt;的）。 </li><li>探针连接到源极/漏极/栅极和如4.2中所述测量在不同的栅电势的IV特性。 注:该器件结构的横截面图在图中示出。 1。 </li></ol>

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The authors have nothing to disclose.

在本实验中，许多参数影响的场效应迁移率的成功测量。首先，在单晶应该足够大，要制造成用于特性测量的场效应装置。物理气相转移（PVT）的方法是一个允许更大的晶体生长。通过调节温度和载气的流量，尺寸的晶体最多能够获得半厘米。其次，单晶的选择是重要的。一个明显的单晶可以包含晶体包和弯曲可能导致束拆解。因此，更薄的晶体是优选的。第三，增加了一倍双面胶带必须保持在与基板表面恒定接触的晶体，作为广泛的实验表明，如果没有这样的磁带，晶体和介电层和/或电极之间的接触可能会在多个移位弯曲操作，所以使接触电阻增加了次获得不稳定或不可再现电流测量。另一个问题是在实现压缩状态下，当晶体的端部向上弯曲。当缠绕适当直径的气缸柔性衬底，晶体/源极/漏极/栅极必须通过探针访问。这是通过缠绕圆筒的端部的柔性的PET衬底的边缘进行，从而使源极/漏极/栅极区域被暴露并访问探针，同时保持弯曲基板。 在数据分析而言，这是公认的，柔性基板的弯曲可能会导致在所述电介质层的厚度，并在电容的变化。虽然这可能改变没有在流动性的计算中考虑的，应该注意这种变化应该是独立弯曲的方向。但是，在流动性的变化趋势相反应消除流动性变化的可能性是由于到t他电容变化。单晶的质量将对测量流动性大的影响。对于图8所示的数据，观察到了两个晶体中迁移率的巨大差异，这可能是由于所选择的结晶的质量。然而，当弯曲的流动性变化，这是在此工作主要关注的，的趋势形成用于从实验得出的结论的基础。 对比现有技术11，其中晶体是第一弯曲，然后置于用于测量的平坦的基板上，我们的方法允许在拉伸状态的电流测量以及压缩状态。在以前的技术中，只在电流通过的最短路径，即，压缩状态，可以测量。这种方法可使各种电性质的直接在柔性基板上进行测量。

软的电子设备，诸如传感器，显示器和耐磨电子，目前正在设计和研究更积极地，许多甚至已在市场近年来1,2,3,4发射。有机半导体材料发挥这些电子设备的一个重要的作用，由于其固有的优点，包括低开发成本，以便在溶液中或在低温下制备的能力，并且，特别是它们的灵活性时相比无机半导体5,6。对于这些电子的一个特别的考虑是，它们将受到频繁的弯曲。弯曲介绍的部件和在装置内的材料应变。因为这样的设备弯曲需要一个稳定和一致的性能。晶体管是大多数电子产品的重要组成部分，其下的弯曲性能感兴趣。许多研究已通过弯曲的有机牛逼解决了这一性能问题欣薄膜晶体管7,8。而在弯曲的电导的变化可以归因于在多晶薄膜中的变化中，晶粒之间的间距，更根本的问题是是否电导可以在弯曲的单晶内变化。它被广泛接受该有机分子之间的电荷传输强烈地依赖于分子和所涉及的中性和带电状态9之间的相互转换的重组能之间的电子耦合。电子耦合是邻近的分子之间和前沿分子轨道的重叠的距离高度敏感。良好有序晶体的弯曲引入应变，并且可以改变分子的晶体内的相对位置。这可以用一个单一的基于晶体的场效应晶体管进行测试。一报告中所使用的柔性基板上的红荧烯单晶在弯曲10，研究晶体厚度的效果。德与平的基底上制备的铜酞菁纳米线晶体虎钳被示出在弯曲11具有更高的迁移率。然而，对于一个FET器件弯曲不同方向的性质没有被探讨。 分子5,7,12,16四氯6,13- diazapentacene（TCDAP）是n型半导体材料12。 TCDAP的晶体具有在3.911埃的细胞长度沿着单元电池的一个轴相邻分子之间偏移的π-π堆叠单斜填料序。水晶沿着这个方向包装增长给长针。沿此方向测得的最大的n型场效应迁移达33.9 平方厘米/ V·秒。不像是脆而易碎许多有机晶体，TCDAP晶体被发现是高度灵活的。在这项工作中，我们使用TCDAP作为导电通道和制备在柔性底物邻单晶场效应晶体管˚F聚对苯二甲酸乙酯（PET）。迁移率测量为一个平的基底上的晶体，与设备弯曲朝向所述柔性基板（向下）或者朝着栅极/介电侧（向上）弯曲。依据相邻之间在堆叠/耦合距离的变化分析了IV数据分子。

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		<col />
		<col />
		<col />
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	<tbody>
		<tr height="21">
			<td height="21" style="height:21px;width:411px;">Colloidal Graphite(water-based)</td>
			<td style="width:208px;">TED PELLA,INC</td>
			<td style="width:160px;">NO.16053</td>
			<td style="width:220px;"></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:411px;">Colloidal Graphite(IPA-based)</td>
			<td style="width:208px;">TED PELLA,INC</td>
			<td style="width:160px;">NO.16051</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">[2,2]Paracyclophane,99%</td>
			<td style="width:208px;">Alfa Aesar</td>
			<td>1633-22-3</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">&#160;polyethylene terephthalate&#160;</td>
			<td>Uni-Onward</td>
			<td style="width:160px;"></td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Mini-Mite 1100&#176;C Tube Furnaces (Single Zone)</td>
			<td style="width:208px;">Thermo Scientific</td>
			<td>TF55030A</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Agilent 4156C Precision Semiconductor Parameter</td>
			<td style="width:208px;">Keysight</td>
			<td>HP4156</td>
			<td></td>
		</tr>
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effect of bending on the electrical characteristics of flexible organic single crystal-based field-effect transistors

在有机半导体的电荷输送高度取决于晶体，这极大地影响了电子耦合在分子包装。然而，在软电子，其中有机半导体发挥关键作用，该装置将被弯曲或反复折叠。在晶体堆积，从而电荷输送弯曲的效果是该装置的性能是至关重要的。在这个手稿，我们描述了协议弯曲的场效应晶体管构造5,7,12,16四氯6,13-​​ diazapentacene（TCDAP）的单晶并在弯曲的晶体，以获得可再现的IV特性。结果表明，弯曲在挠性基板导致在电荷迁移率几乎可逆但相反的趋势制备的场效应晶体管，取决于弯曲方向。当该装置被朝向顶部栅极/介电层（向上，压缩状态）弯曲，并是当降低移动性的增加NT朝晶体/基板侧（向下，拉伸状态）。弯曲曲率的影响还观察，从更高的弯曲曲率所得更大的流动性的变化。有人建议，在弯曲时，从而影响电子耦合和随后的载流子传输能力的分子间π-π距离变化。

单晶X射线衍射分析表明，TCDAP是一个扩展的π系统，分子沿一个轴的图填料。图2表示通过粉末XRD对TCDAP晶体的扫描模式。一系列尖锐的峰被观测到，对应只对家族的（0，K，ℓ）面，由与晶体的粉末衍射图案进行比较。这意味着， 如图晶体结构取向。 3。 弯曲前，扁平n型TCDAP单晶晶体管，得到良好分辨饱和电流仅用于当栅极电压从-60伏在15 V以下步骤改变以60伏的正栅电压（V GS）。这表明n型行为（ 图4a）的图。图4b示出两个日志（蓝线）和漏极电流的线性（黑线）曲线作为函数的源-漏bIAS（V DS）在30 V的栅极偏置电子迁移率是从IV特性的线性状态，根据以下方程来计算， <img alt="公式1" src="/files/ftp_upload/54651/54651equation1.jpg" />或者在饱和状态根据等式， <img alt="方程2" src="/files/ftp_upload/54651/54651equation2.jpg" />其中W是沟道宽度，L为沟道长度，m是载流子迁移，C i为每介电绝缘体的每单位面积的电容，而V TH是阈值电压，分别为。 1.42厘米2 / V的平均迁移率·秒和分别实现的10 3 -10 4的开/关比。 用于弯曲试验，端部的弯曲向下应当诱导使得该被定义为"拉伸"状态的信道/电介质界面附近的导电沟道的拉伸（参照图5a），而端部的向上弯曲会诱发导电通道的压缩并因此定义为"压缩"状态（参照图5B）。在其扁平状态下的装置的IV特性相反的弯曲操作的弯曲状态后进行了检查，具有半径R = 14.0Hz毫米;截止电流几乎没有变化（参照图6）。这提供以指示该设备结构可恢复并且该设备没有在不同的方向弯曲破坏。接着，将四获得在该拉伸状态下的弯曲状态进行测定。如示于图7A &lt;/ STRONG&gt;，目前有弯曲，更使更多的弯曲（半径较小）下降。计算出的移动性被绘制为弯曲的半径的函数。如示于图8A，有流动性的下降与弯曲增加一个明显的趋势。因此，在r = 14.0Hz毫米的向下的弯曲由6.25％所造成的降低的迁移率的。流动性降低了12.5％，25％，和在12.4毫米，8.0毫米，和5.8 mm弯曲半径为37.5％，分别进行观察。在在R =14.0毫米相反，如果将该装置向上弯曲（压缩状态），在直线IV曲线的轻微移位，观察，具有增加的转变，因为弯曲增加（ 图7b）。根据该曲线的分别14.0毫米12.4毫米，8.0毫米，和5.8毫米，弯曲半径增加了5.5％，12.8％，15.2％，和19.8％的斜率计算出的迁移率（ 图8b）。 在弯晶，从不同侧面体验不同的S列车。在凹面侧，分子被压缩，并在凸面侧，分子分开，要取决于曲率的程度。因此，晶体结果的压缩和分子，分别扩散向上和向下弯曲，在栅极电介质的界面，从而增加和减少电子耦合，分别。 在一个晶体管中的电荷载体被称为是在电介质表面的几个单层内，和迁移率主要受立即层的电介质层旁边。在目前的情况下，在压缩状态下的增加的流动性和降低的流动性在拉伸状态应该最有可能是由于在晶体内的分子间的间距的变化。我们的研究结果进一步证明了电子耦合的作为分子间距离的函数的重要性。在多晶晶粒，其中所述的薄膜器件晶体可能不如我们在这些实验中使用的那样大，晶粒间的距离也可以通过弯曲，从而产生相似的结果的影响。 <img alt="图1" src="/files/ftp_upload/54651/54651fig1.jpg" /> 图1. 在柔性基板上制备的顶接触单晶的场效应晶体管的剖面图。从胶体石墨制备的源极/漏极/栅极电极，而介电绝缘体是从[2.2]的热解制备的二聚二甲苯前兆。 <a href="https://ecsource-jove-com.remotexs.ntu.edu.sg/files/ftp_upload/54651/54651fig1large.jpg" target="_blank">请点击此处查看该图的放大版本。</a> <img alt="图2" src="/files/ftp_upload/54651/54651fig2.jpg" /> 图2. 粉末的TCDAP SI的X射线衍射图案奠定了PET基材上ngle结晶。该峰索引到家庭（0，K，ℓ）面。 <a href="https://ecsource-jove-com.remotexs.ntu.edu.sg/files/ftp_upload/54651/54651fig2large.jpg" target="_blank">请点击此处查看该图的放大版本。</a> <img alt="图3" src="/files/ftp_upload/54651/54651fig3.jpg" /> 图3。 电荷传输通道的示意图。沿a轴的电荷传输，与（0,1,1）面（红色面）平行于基板（蓝色平面）。 <a href="https://ecsource-jove-com.remotexs.ntu.edu.sg/files/ftp_upload/54651/54651fig3large.jpg" target="_blank">请点击此处查看该图的放大版本。</a> <img alt="图4" src="/files/ftp_upload/54651/54651fig4.jpg" /> 图4. I DS -V DS特性。 </st荣&gt;（a）以15 V的步骤和与栅电压从-60V。改变到60伏的输出特性（b）该传递特性，其同时显示日志（蓝线）和线性（黑线）的图在30 V弯曲前的PET基材上TCDAP单晶场效应晶体管（SCFET）栅极偏置漏源极-漏极偏压的函数（V DS）的电流。 <a href="https://ecsource-jove-com.remotexs.ntu.edu.sg/files/ftp_upload/54651/54651fig4large.jpg" target="_blank">请点击此处查看这个大版本数字。</a> <img alt="图5" src="/files/ftp_upload/54651/54651fig5.jpg" /> 图5. 弯曲实验的示意图。（ 一 ）向上方弯曲的状态，与周围的圆筒缠绕在器件部露出的基片的边缘，和（b）的向下弯曲站德，周围的圆筒包装基材。 <a href="https://ecsource-jove-com.remotexs.ntu.edu.sg/files/ftp_upload/54651/54651fig5large.jpg" target="_blank">请点击此处查看该图的放大版本。</a> <img alt="图6" src="/files/ftp_upload/54651/54651fig6.jpg" /> 图6. 比较的TCDAP单一基于晶体-FET器件的传输特性。前后（ 一 ）向下弯曲及（b）向上弯曲，第一次和第四次到曲率半径R = 14.0Hz毫米。 <a href="https://ecsource-jove-com.remotexs.ntu.edu.sg/files/ftp_upload/54651/54651fig6large.jpg" target="_blank">请点击这里查看该图的放大版本。</a> <img alt="图7" src="/files/ftp_upload/54651/54651fig7.jpg" /> 图7 的第的传输特性的一个覆盖ÈTCDAP单个基于晶体的FET器件。对于（ 一 ）向下弯曲，以及（b）在不同的弯曲半径向上弯曲弯曲状态（R = 14.0Hz毫米，R =12.4毫米，R = 8.0Hz毫米，和R = 5.8Hz MM） 。 <a href="https://ecsource-jove-com.remotexs.ntu.edu.sg/files/ftp_upload/54651/54651fig7large.jpg" target="_blank">请点击此处查看该图的放大版本。</a> <img alt="图8" src="/files/ftp_upload/54651/54651fig8.jpg" /> 图8. 测量迁移率作为TCDAP单个基于晶体的装置中的弯曲半径的函数（a）中向下弯曲。 （ 二 ）向上弯曲。 <a href="https://ecsource-jove-com.remotexs.ntu.edu.sg/files/ftp_upload/54651/54651fig8large.jpg" target="_blank">请点击此处查看该图的放大版本。</a>

Watch this Scientific Journal Video about Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors at JoVE.com

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

该原稿描述了一种有机单基于晶体的场效应晶体管，以保持对电子特性测量一个运作装置的弯曲加工。结果表明，在晶体中的分子间距，从而在电荷跳频速率，这是在柔性电子重要弯曲原因的变化。

弯曲对基于晶体的柔性有机单场效应晶体管的电气特性的影响

The charge transport in an organic semiconductor depends highly on the molecular packing in the crystal, which influences the electronic coupling ...

effect-bending-on-electrical-characteristics-flexible-organic-single

Nanyang Technological University

Research

JoVE Journal

Engineering

8.0K 次观看.  Academia Sinica. 该原稿描述了一种有机单基于晶体的场效应晶体管，以保持对电子特性测量一个运作装置的弯曲加工。结果表明，在晶体中的分子间距，从而在电荷跳频速率，这是在柔性电子重要弯曲原因的变化。 

视频: Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Controlling the Size, Shape and Stability of Supramolecular Polymers in Water

For aqueous based supramolecular polymers, the simultaneous control over shape, size and stability is very difficult1. At the same time, the ability to do so is highly important in view of a number of applications in functional soft matter including electronics, biomedical engineering, and sensors. In the past, successful strategies to control the size and shape of supramolecular polymers typically focused on the use of templates2,3, end cappers4 or selective solvent techniques5. 
Here we disclose a strategy based on self-assembling discotic amphiphiles that leads to the control over stack length and shape of ordered, chiral columnar aggregates. By balancing electrostatic repulsive interactions on the hydrophilic rim and attractive non-covalent forces within the hydrophobic core of the polymerizing building block, we manage to create small and discrete spherical objects6,7. Increasing the salt concentration to screen the charges induces a sphere-to-rod transition. Intriguingly, this transition is expressed in an increase of cooperativity in the temperature-dependent self-assembly mechanism, and more stable aggregates are obtained. 
For our study we select a benzene-1,3,5-tricarboxamide (BTA) core connected to a hydrophilic metal chelate via a hydrophobic, fluorinated L-phenylalanine based spacer (Scheme 1). The metal chelate selected is a Gd(III)-DTPA complex that contains two overall remaining charges per complex and necessarily two counter ions. The one-dimensional growth of the aggregate is directed by &pi;-&pi; stacking and intermolecular hydrogen bonding. However, the electrostatic, repulsive forces that arise from the charges on the Gd(III)-DTPA complex start limiting the one-dimensional growth of the BTA-based discotic once a certain size is reached. At millimolar concentrations the formed aggregate has a spherical shape and a diameter of around 5 nm as inferred from 1H-NMR spectroscopy, small angle X-ray scattering, and cryogenic transmission electron microscopy (cryo-TEM). The strength of the electrostatic repulsive interactions between molecules can be reduced by increasing the salt concentration of the buffered solutions. This screening of the charges induces a transition from spherical aggregates into elongated rods with a length &gt; 25 nm. Cryo-TEM allows to visualise the changes in shape and size. In addition, CD spectroscopy permits to derive the mechanistic details of the self-assembly processes before and after the addition of salt. Importantly, the cooperativity -a key feature that dictates the physical properties of the produced supramolecular polymers- increases dramatically upon screening the electrostatic interactions. This increase in cooperativity results in a significant increase in the molecular weight of the formed supramolecular polymers in water.

The goal of this experiment is to determine and control the size, shape and stability of self-assembled discotic amphiphiles in water. For aqueous based supramolecular polymers such level of control is very difficult. We apply a strategy using both repulsive and attractive interactions. The experimental techniques applied to characterize this system are broadly applicable.

控制的大小，形状和稳定性超分子聚合物在水

For aqueous based supramolecular polymers, the simultaneous control over shape, size and stability is very difficult1. At the same time, the ability to do ...

科研

工程学

Encapsulation and Permeability Characteristics of Plasma Polymerized Hollow Particles

In this protocol, core-shell nanostructures are synthesized by plasma enhanced chemical vapor deposition. We produce an amorphous barrier by plasma polymerization of isopropanol on various solid substrates, including silica and potassium chloride. This versatile technique is used to treat nanoparticles and nanopowders with sizes ranging from 37 nm to 1 micron, by depositing films whose thickness can be anywhere from 1 nm to upwards of 100 nm. Dissolution of the core allows us to study the rate of permeation through the film. In these experiments, we determine the diffusion coefficient of KCl through the barrier film by coating KCL nanocrystals and subsequently monitoring the ionic conductivity of the coated particles suspended in water. The primary interest in this process is the encapsulation and delayed release of solutes. The thickness of the shell is one of the independent variables by which we control the rate of release. It has a strong effect on the rate of release, which increases from a six-hour release (shell thickness is 20 nm) to a long-term release over 30 days (shell thickness is 95 nm). The release profile shows a characteristic behavior: a fast release (35% of the final materials) during the first five minutes after the beginning of the dissolution, and a slower release till all of the core materials come out.

We have used plasma enhanced chemical vapor deposition to deposit thin films ranging from a few nm to several 100 nm on nano-sized particles of various materials. We subsequently etch the core material to produce hollow nanoshells whose permeability is controlled by the thickness of the shell. We characterize the permeability of these coatings to small solutes and demonstrate that these barriers can provide sustained release of the core material over several days.

等离子体聚合空心颗粒的封装和渗透特征

In this protocol, core-shell nanostructures are synthesized by plasma enhanced chemical vapor deposition. We produce an amorphous barrier by plasma ...

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates

In recent years &pi;-conjugated organic semiconductors have emerged as the active material in a number of diverse applications including large-area, low-cost displays, photovoltaics, printable and flexible electronics and organic spin valves. Organics allow (a) low-cost, low-temperature processing and (b) molecular-level design of electronic, optical and spin transport characteristics. Such features are not readily available for mainstream inorganic semiconductors, which have enabled organics to carve a niche in the silicon-dominated electronics market. The first generation of organic-based devices has focused on thin film geometries, grown by physical vapor deposition or solution processing. However, it has been realized that organic nanostructures can be used to enhance performance of above-mentioned applications and significant effort has been invested in exploring methods for organic nanostructure fabrication.	
A particularly interesting class of organic nanostructures is the one in which vertically oriented organic nanowires, nanorods or nanotubes are organized in a well-regimented, high-density array. Such structures are highly versatile and are ideal morphological architectures for various applications such as chemical sensors, split-dipole nanoantennas, photovoltaic devices with radially heterostructured "core-shell" nanowires, and memory devices with a cross-point geometry. Such architecture is generally realized by a template-directed approach. In the past this method has been used to grow metal and inorganic semiconductor nanowire arrays. More recently &pi;-conjugated polymer nanowires have been grown within nanoporous templates. However, these approaches have had limited success in growing nanowires of technologically important &pi;-conjugated small molecular weight organics, such as tris-8-hydroxyquinoline aluminum (Alq3), rubrene and methanofullerenes, which are commonly used in diverse areas including organic displays, photovoltaics, thin film transistors and spintronics.	
Recently we have been able to address the above-mentioned issue by employing a novel "centrifugation-assisted" approach. This method therefore broadens the spectrum of organic materials that can be patterned in a vertically ordered nanowire array. Due to the technological importance of Alq3, rubrene and methanofullerenes, our method can be used to explore how the nanostructuring of these materials affects the performance of aforementioned organic devices. The purpose of this article is to describe the technical details of the above-mentioned protocol, demonstrate how this process can be extended to grow small-molecular organic nanowires on arbitrary substrates and finally, to discuss the critical steps, limitations, possible modifications, trouble-shooting and future applications.

We report a simple method for fabricating an ultrahigh density array of vertically ordered small-molecular organic nanowires. This method allows for synthesis of complex heterostructured hybrid nanowire geometries, which can be inexpensively grown on arbitrary substrates. These structures have potential applications in organic electronics, optoelectronics, chemical sensing, photovoltaics and spintronics.

超高密度垂直对齐的任意基质的小分子有机纳米线阵列

In  recent years &pi;-conjugated  organic semiconductors have emerged as the active material in a number of  diverse applications including large-area, ...

Casting Protocols for the Production of Open Cell Aluminum Foams by the Replication Technique and the Effect on Porosity

Metal foams are interesting materials from both a fundamental understanding and practical applications point of view. Uses have been proposed, and in many cases validated experimentally, for light weight or impact energy absorbing structures, as high surface area heat exchangers or electrodes, as implants to the body, and many more. Although great progress has been made in understanding their structure-properties relationships, the large number of different processing techniques, each producing material with different characteristics and structure, means that understanding of the individual effects of all aspects of structure is not complete. The replication process, where molten metal is infiltrated between grains of a removable preform material, allows a markedly high degree of control and has been used to good effect to elucidate some of these relationships. Nevertheless, the process has many steps that are dependent on individual &#8220;know-how&#8221;, and this paper aims to provide a detailed description of all stages of one embodiment of this processing method, using materials and equipment that would be relatively easy to set up in a research environment. The goal of this protocol and its variants is to produce metal foams in an effective and simple way, giving the possibility to tailor the outcome of the samples by modifying certain steps within the process. By following this, open cell aluminum foams with pore sizes of 1&#8211;2.36 mm diameter and 61% to 77% porosity can be obtained.

Replication is one of the processing techniques used for the production of porous metal sponges. In this paper one implementation of the method for the production of open celled porous aluminum is shown in detail.

铸造协议的开孔泡沫铝通过复制技术的生产和孔隙率的影响

Metal foams are interesting materials from both a fundamental understanding and practical applications point of view. Uses have been proposed, and in many ...

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization.

The fabrication process and experimental characterization techniques relevant to single-electron pumps based on silicon metal-oxide-semiconductor quantum dots are discussed.

硅金属 - 氧化物 - 半导体量子点单电子泵

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by ...

Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh

Here, the authors report the embedded metal-mesh transparent electrode (EMTE), a new transparent electrode (TE) with a metal mesh completely embedded in a polymer film. This paper also presents a low-cost, vacuum-free fabrication method for this novel TE; the approach combines lithography, electroplating, and imprint transfer (LEIT) processing. The embedded nature of the EMTEs offers many advantages, such as high surface smoothness, which is essential for organic electronic device production; superior mechanical stability during bending; favorable resistance to chemicals and moisture; and strong adhesion with plastic film. LEIT fabrication features an electroplating process for vacuum-free metal deposition and is favorable for industrial mass production. Furthermore, LEIT allows for the fabrication of metal mesh with a high aspect ratio (i.e., thickness to linewidth), significantly enhancing its electrical conductance without adversely losing optical transmittance. We demonstrate several prototypes of flexible EMTEs, with sheet resistances lower than 1 &#937;/sq and transmittances greater than 90%, resulting in very high figures of merit (FoM) &#8211; up to 1.5 x 104 &#8211; which are amongst the best values in the published literature.

This protocol describes a solution-based fabrication strategy for high-performance, flexible, transparent electrodes with fully-embedded, thick metal mesh. Flexible transparent electrodes fabricated by this process demonstrate among the highest reported performances, including ultra-low sheet resistance, high optical transmittance, mechanical stability under bending, strong substrate adhesion, surface smoothness, and environmental stability.

具有嵌入式金属网的高性能，灵活，透明电极的可扩展解决方案处理制造策略

Here, the authors report the embedded metal-mesh transparent electrode (EMTE), a new transparent electrode (TE) with a metal mesh completely embedded in a ...

Preparation of Liquid Crystal Networks for Macroscopic Oscillatory Motion Induced by Light

A strategy based on doped liquid crystalline networks is described to create mechanical self-sustained oscillations of plastic films under continuous light irradiation. The photo-excitation of dopants that can quickly dissipate light into heat, coupled with anisotropic thermal expansion and self-shadowing of the film, gives rise to the self-sustained deformation. The oscillations observed are influenced by the dimensions and the modulus of the film, and by the directionality and intensity of the light. The system developed offers applications in energy conversion and harvesting for soft-robotics and automated systems.
The general method described here consists of creating free-standing liquid crystalline films and characterizing the mechanical and thermal effects observed. The molecular alignment is achieved using alignment layers (rubbed polyimide), commonly used in the display manufacturing industry. To obtain actuators with large deformation, the mesogens are aligned and polymerized in a splay/bend configuration, i.e., with the director of the liquid crystals (LCs) going gradually from planar to homeotropic through the film thickness. Upon irradiation, the mechanical and thermal oscillations obtained are monitored with a high-speed camera. The results are further quantified by image analysis using an image processing program.

The goal of the protocol is to create liquid crystalline polymer films that can mechanically oscillate under continuous light irradiation. We describe in great detail the conception of free-standing films, from the liquid crystal alignment method to the photo-actuation. The experimental protocol applied to prepare this material is broadly applicable.

光诱导的宏观振荡运动液晶网络的制备

A strategy based on doped liquid crystalline networks is described to create mechanical self-sustained oscillations of plastic films under continuous ...

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Flexible photodetectors have been intensely studied for the use of curved image sensors, which are a crucial component in bio-inspired imaging systems, but several challenging points remain, such as a low absorption efficiency due to a thin active layer and low flexibility. We present an advanced method to fabricate a flexible phototransistor array with an improved electrical performance. The outstanding electrical performance is driven by a low dark current owing to deep impurity doping. Stretchable and flexible metal interconnectors simultaneously offer electrical and mechanical stabilities in a highly deformed state. The protocol explicitly describes the fabrication process of the phototransistor using a thin silicon membrane. By measuring I-V characteristics of the completed device in deformed states, we demonstrate that this approach improves the mechanical and electrical stabilities of the phototransistor array. We expect that this approach to a flexible phototransistor can be widely used for the applications of not only next-generation imaging systems/optoelectronics but also wearable devices such as tactile/pressure/temperature sensors and health monitors.

We present a detailed method to fabricate a deformable lateral NIPIN phototransistor array for curved image sensors. The phototransistor array with an open mesh form, which is composed of thin silicon islands and stretchable metal interconnectors, provides flexibility and stretchability. The parameter analyzer characterizes the electrical property of the fabricated phototransistor.

基于侧向 NIPIN Phototransistors 的柔性图像传感器的研制

Flexible photodetectors have been intensely studied for the use of curved image sensors, which are a crucial component in bio-inspired imaging systems, ...

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Heterostructure field effect transistors (HFETs) utilizing a two dimensional electron gas (2DEG) channel have a great potential for high speed device applications. Zinc oxide (ZnO), a semiconductor with a wide bandgap (3.4 eV) and high electron saturation velocity has gained a great deal of attention as an attractive material for high speed devices. Efficient gate modulation, however, requires high-quality Schottky contacts on the barrier layer. In this article, we present our Schottky diode fabrication procedure on Zn-polar BeMgZnO/ZnO heterostructure with high density 2DEG which is achieved through strain modulation and incorporation of a few percent Be into the MgZnO-based barrier during growth by molecular beam epitaxy (MBE). To achieve high crystalline quality, nearly lattice-matched high-resistivity GaN templates grown by metal-organic chemical vapor deposition (MOCVD) are used as the substrate for the subsequent MBE growth of the oxide layers. To obtain the requisite Zn-polarity, careful surface treatment of GaN templates and control over the VI/II ratio during the growth of low temperature ZnO nucleation layer are utilized. Ti/Au electrodes serve as Ohmic contacts, and Ag electrodes deposited on the O2 plasma pretreated BeMgZnO surface are used for Schottky contacts.

Attainment of high-quality Schottky contacts is imperative for achieving efficient gate modulation in heterostructure field effect transistors (HFETs). We present the fabrication methodology and characteristics of Schottky diodes on Zn-polar BeMgZnO/ZnO heterostructures with high-density two dimensional electron gas (2DEG), grown by plasma-assisted molecular beam epitaxy on GaN templates.

等离子体辅助分子束外延法制备的锌极性 BeMgZnO/氧化锌异质结构肖特基二极管的制备

Heterostructure field effect transistors (HFETs) utilizing a two dimensional electron gas (2DEG) channel have a great potential for high speed device ...

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Reduction of threading dislocation density (TDD) in epitaxial germanium (Ge) on silicon (Si) has been one of the most important challenges for the realization of monolithically integrated photonics circuits. The present paper describes methods of theoretical calculation and experimental verification of a novel model for the reduction of TDD. The method of theoretical calculation describes the bending of threading dislocations (TDs) based on the interaction of TDs and non-planar growth surfaces of selective epitaxial growth (SEG) in terms of dislocation image force. The calculation reveals that the presence of voids on SiO2 masks help to reduce TDD. Experimental verification is described by germanium (Ge) SEG, using an ultra-high vacuum chemical vapor deposition method and TD observations of the grown Ge via etching and cross-sectional transmission electron microscope (TEM). It is strongly suggested that the TDD reduction would be due to the presence of semicylindrical voids over the SiO2 SEG masks and growth temperature. For experimental verification, epitaxial Ge layers with semicylindrical voids are formed as the result of SEG of Ge layers and their coalescence. The experimentally obtained TDDs reproduce the calculated TDDs based on the theoretical model. Cross-sectional TEM observations reveal that both the termination and generation of TDs occur at semicylindrical voids. Plan-view TEM observations reveal a unique behavior of TDs in Ge with semicylindrical voids (i.e., TDs are bent to be parallel to the SEG masks and the Si substrate).

Theoretical calculation and experimental verification are proposed for a reduction of threading dislocation (TD) density in germanium epitaxial layers with semicylindrical voids on silicon. Calculations based on the interaction of TDs and surface via image force, TD measurements, and transmission electron microscope observations of TDs are presented.